SGS Thomson Microelectronics IRF640FP, IRF640 Datasheet

IRF640



IRF640FP

N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP

MESH OVERLAY MOSFET

TYPE V

IRF640 IRF640FP

■ TYPICALR

■ EXTREMELY HIGH dV/dt CAPABILITY

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

200 V 200 V

= 0.150

DESCRIPTION

This power MOSFET is designed using he company’sconsolidatedstrip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with standardpartsfrom varioussources.

APPLICATIONS

■ HIGHCURRENT SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ DC/DC COVERTERSFOR TELECOM,

INDUSTRIAL,AND LIGHTING EQUIPMENT.

R

DS(on)

<0.18Ω <0.18

Ω

I

D

18 A 18 A

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

IRF 640 IRF640F P

V

I

DM

P

dv/ dt(

V

T

(•) Pulse width limited by safe operating area (1)ISD≤ 18A, di/dt ≤ 300A/µs,VDD≤ V

First Digit of the DatecodeBeing Z or K IdentifiesSiliconCharacterized in this Datasheet

(**)Limited only by Maximum TemperatureAllowed

October 1999

Drain-source Voltage (VGS=0) 200 V

DS

Dra in- gate Voltag e (RGS=20kΩ)

DGR

Gate -source Voltage ± 20 V

GS

Dra in Current (c ontinuous) at Tc=25oC 18 18(**) A

I

D

Dra in Current (c ontinuous) at Tc=100oC 11 11(**) A

I

D

200 V

(•) Dra in Curren t (pu ls ed) 72 72 A

Tot al Dissipation at Tc=25oC 125 40 W

tot

Derating Factor 1.0 0.32 W/

) P eak Diode Rec ov e ry v oltage slope 5 5 V/ns

1

Insulation Withstand Voltage (DC)  2000 V

ISO

St orage Tem pe r ature -65 to 1 50

stg

Max. O p er a ti ng Junct ion T e m pe rat ure 150

T

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/9

IRF640/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resist ance Junction- c as e Max 1.0 3.12 Ther mal Resist ance Junction- am b ien t Max

Thermal Resistance Case-sink Typ Maximum Le ad T emperat u r e F o r Soldering Purpose

l

Avalanche Cu r rent, Repetitive or No t -Repetit iv e (pulse width limite d by T

Single Pu lse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

18 A

280 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

200 V

Break d own Vo lt age

I

DSS

GSS

Zero Gate Voltage Drain Curr ent (V

GS

Gat e- b ody Leaka ge Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 20 V

V

GS

1

10

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

234V

Voltage

R

DS(on)

Static Drain-source On

VGS=10V ID= 9 A 0.15 0.18 Ω

Resistanc e

I

D(on)

On State Drain Cu r rent VDS>I

D(on)xRDS(on)max

18 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductanc e

C

Input Capacitanc e

iss

Out put Ca pacita nce

oss

Reverse T ransfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=9A 7 11 S

VDS=25V f=1MHz VGS= 0 1200

200

60

1560

260

80

µ µA

pF pF pF

A

2/9

IRF640/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Time

r

Rise T ime

t

VDD= 100 V ID=9A R

=4.7

G

Ω

VGS=10V

13 27

17 35

(see te st circuit, figure 3)

Q Q Q

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Ch arge

gd

VDD= 160 V ID=18A VGS= 1 0V 55

10 21

72 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise T ime Fall Time

f

Cross-ov er T ime

c

VDD= 160 V ID=18A

=4.7 ΩVGS=10V

R

G

(see te st circuit, figure 5)

21 25 50

27 32 65

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safeoperating area

Source-drain C urr ent

(•)

Source-drain C urr ent

18 72

(pulsed)

(∗) For ward On Voltage ISD=18A VGS=0 1.5 V

Reverse Rec o very

rr

Time Reverse Rec o very

rr

= 18 A di / dt = 100 A /µs

I

SD

=50V Tj= 150oC

V

DD

(see te st circuit, figure 5)

240

1.8 Charge Reverse Rec o very

15

Current

ns ns

nC nC

ns ns ns

A A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9