SGS Thomson Microelectronics IRF634, IRF634FP Datasheet
IRF634
IRF634FP
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE V
IRF634
IRF634FP
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
DS
DSS
250 V
250 V
(on) = 0.38 Ω
R
DS(on)
< 0.45 Ω
< 0.45 Ω
I
D
8 A
8 A
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
■ IDEAL FOR MONITOR’s B+ FUNCTION
3
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF634 IRF634FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
250 V
250 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 32 32(*) A
Total Dissipation at TC = 25°C
8 8(*) A
5 5(*) A
80 30 W
Derating Factor 0.64 0.24 W/°C
Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V
(*)Limit ed only by max i mum tempe rat ure allowed
(BR)DSS
, Tj≤ T
jMAX
1/9July 2001
IRF634/IRF634FP
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 4.11 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 250 V
8A
300 mJ
Breakdown Voltage
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 4 A
234V
0.38 0.45 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 118 pF
Reverse Transfer
Capacitance
ID=4A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
78 S
770 pF
48 pF
2/9
IRF634/IRF634FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 18 ns
Total Gate Charge
Gate-Source Charge 5.2 nC
Gate-Drain Charge 14.8 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(Voff)
t
r(Voff)
t
t
f
t
f
c
Turn-off- Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating ar ea.
Source-drain Current 8 A
(2)
Source-drain Current (pulsed) 32 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.1 µC
Reverse Recovery Current 11.3 A
= 125 V, ID = 4 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 200V, ID = 8 A,
DD
VGS = 10V
VDD = 125V, ID = 4 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
V
= 200V, ID = 8 A,
clamp
R
=4.7Ω, V
G
GS
= 10V
(see test circuit, Figure 5)
ISD = 8 A, VGS = 0
I
= 8 A, di/dt = 100A/µs
SD
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
13 ns
37 51.8 nC
51
16
12.5
12.5
28
1.7 V
198 ns
ns
ns
ns
ns
ns
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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