SGS Thomson Microelectronics IRF630S Datasheet
IRF630S
N - CHANNEL 200V - 0.35Ω -9A-D2PAK
MESH OVERLAY MOSFET
TYPE V
DSS
R
DS(on)
I
D
IRF 630S 200 V < 0.40 Ω 9A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ FORTHROUGH-HOLE VERSION CONTACT
DS(on)
= 0.35 Ω
SALESOFFICE
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidatedstrip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standardpartsfrom various sources.
APPLICATIONS
■ HIGHCURRENT SWITCHING
■ UNINTERRUPTIBLE POWERSUPPLY(UPS)
■ DC/DC COVERTERSFOR TELECOM,
INDUSTRIAL,AND LIGHTING EQUIPMENT.
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤ 9A, di/dt ≤ 300 A/µs,VDD≤ V
December 1998
Dra in- sour c e Vol t age (VGS= 0) 200 V
DS
Dra in- gate Volt age (RGS=20kΩ) 200 V
DGR
Gat e-source Voltage ± 20 V
GS
Dra in Current (c ont inuous) at Tc=25oC9A
I
D
Dra in Current (c ont inuous) at Tc=100oC5.7A
I
D
(•) Dra in Current (p ulsed) 36 A
Tot al Dissipation at Tc=25oC70W
tot
Der ati ng Factor 0.56 W/
1) Peak Di ode Recov ery voltage slope 5 V/ns
St orage Tem pe r ature -65 to 150
stg
Max. Operat ing J unction Temperature 150
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
IRF630S
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure For Soldering Purp ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalan c he Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
1.47
62.5
0.5
300
9A
100 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Paramete r Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 200 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current ( V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 30 V
GS
1
50
100 nA
±
ON(∗)
Symbol Paramete r Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-sour ce On
VGS=10V ID= 5 A 0.35 0.40
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
10 A
VGS=10V
DYNAMIC
Symbol Paramete r Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apacitance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=5A 3 4 S
VDS=25V f=1MHz VGS= 0 540
90
35
700
120
50
µ
µA
Ω
pF
pF
pF
A
2/8
IRF630S
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Paramete r Test Con ditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=100V ID= 4.5 A
R
=4.7
G
Ω
VGS=10V
10
15
14
20
(see test circuit, figure 3)
Q
Q
Q
Tot al G at e Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD= 160 V ID=9A VGS=10V 31
7.5
9
45 nC
SWITCHING OFF
Symbol Paramete r Test Con ditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise T im e
Fall Time
f
Cross-over Time
c
VDD=160V ID=9A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
12
12
25
17
17
35
SOURCEDRAINDIODE
Symbol Paramete r Test Con ditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
9
36
(pulsed)
(∗)ForwardOnVoltage ISD=9A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
ISD=9A di/dt=100A/µs
=50V Tj= 150oC
V
DD
(see test circuit, figure 5)
170
0.95
Charge
Reverse Recover y
11
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area Thermal Impedance
3/8
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