SGS Thomson Microelectronics IRF630FP, IRF630 Datasheet
IRF630
N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP
TYPE V
IRF 630
IRF 630FP
■ TYPICALR
■ EXTREMELY HIGH dV/dt CAPABILITY
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
200 V
200 V
= 0.35 Ω
DESCRIPTION
This power MOSFET is designed using he
company’sconsolidatedstrip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standardpartsfrom varioussources.
APPLICATIONS
■ HIGHCURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERSFOR TELECOM,
INDUSTRIAL,AND LIGHTINGEQUIPMENT.
R
DS(on)
<0.40Ω
<0.40Ω
I
D
9A
9A
IRF630FP
MESH OVERLAY MOSFET
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF63 0 IRF 630FP
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulsewidth limited by safeoperating area (1)I
First Digit of the DatecodeBeing Z or K IdentifiesSilicon Characterized in this Datasheet
(**)Limited only by Maximum TemperatureAllowed
February 1999
Dra in- sour c e Voltage (VGS= 0) 200 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 200 V
DGR
Gat e-source Voltage
GS
Dra in Cu rr ent ( continuous ) a t Tc=25oC 9 9(**) A
I
D
Dra in Cu rr ent ( continuous ) a t Tc=100oC5.75.7(**)A
I
D
20 V
±
(•) Dra in Cu rr ent ( p uls ed ) 36 36 A
Tot al Dis sipation at Tc=25oC7525W
tot
Der ati ng Factor 0.6 0.20 W/
) Peak Diode Recovery voltage slope 5 5 V/ ns
1
Insulation W ithstand Voltage (DC) 20 00 V
ISO
St orage T em pe r at ure -65 to 150
stg
Max. Operating Junct ion Temperat ur e 150
T
j
≤
9A, di/dt≤300 A/µs, V
SD
≤
DD
V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/9
IRF630/FP
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Paramet er Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Ma x 1.67 4.17
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m pe ra t ure For Soldering Pur p os e
l
Avalanche Current, R epetitiv e or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he E nergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
9A
160 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 200 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 20 V
GS
1
50
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA 234V
Sta t ic Drain-s ource On
VGS=10V ID= 5 A 0.35 0.40
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
10 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=5A 3 4 S
VDS=25V f=1MHz VGS= 0 540
90
35
700
120
50
µA
µA
Ω
pF
pF
pF
2/9
IRF630/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=100V ID= 4.5 A
R
=4.7
G
Ω
VGS=10V
10
15
14
20
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate C harge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 160 V ID=9A VGS=10V 31
7.5
9
45 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Tim e
Fall T ime
f
Cross-over Tim e
c
VDD=160V ID=9A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
12
12
25
17
17
35
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
9
36
(pulsed)
(∗)ForwardOnVoltage ISD=9A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=9A di/dt=100A/µs
=50V Tj= 150oC
V
DD
(see test circuit, figure 5)
170
0.95
Charge
Reverse Recovery
11
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
3/9
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