SGS Thomson Microelectronics IRF620FI, IRF620 Datasheet
IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
IRF 620
IRF 620FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
DS(on)
DSS
200 V
200 V
= 0.55 Ω
R
DS(on)
<0.8Ω
<0.8Ω
I
D
6A
4A
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramete r Val u e Unit
IRF 62 0 IRF620FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 200 V
DS
Drain- gate Voltage (RGS=20kΩ)200V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (cont.) at Tc=25oC64A
D
Drain Current (cont.) at Tc=100oC42A
I
D
(•) Drain Current (pulsed) 24 24 A
Total Di ssipation at Tc=25oC7030W
tot
Derat ing Factor 0.56 0.24 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/9
IRF620/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-s
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Res istance Junction - cas e Max 1.79 4.17
Thermal Resis tance Junction- ambient M ax
Thermal Res istance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
62.5
0.5
300
6A
20 mJ
5mJ
4A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 200 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
10
100
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=3A 0.55 0.8 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10V 6 A
DYNAMIC
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=3A 1.5 3.5 S
VDS=25V f=1MHz VGS=0 460
90
20
600
120
30
µA
µA
pF
pF
pF
2/9
IRF620/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Tur n - of f Delay Time
Fall Time
t
f
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For w ar d On Voltage ISD=6A VGS=0 1.5 V
I
V
I
SDM
SD
SD
VDD=100V ID=3A
RG=50 Ω VGS=10V
(see test circ uit)
ID=6A VGS=10V
VDD= Max Rating x 0.8
(see test circ uit)
30
70
135
45
20
6
8
45
100
190
65
30 nC
6
24
ns
ns
ns
ns
nC
nC
A
A
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=6A di/dt=100A/µs
VDD= 100 V Tj= 150oC
170
1
Charge
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
ns
µC
3/9
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