SGS Thomson Microelectronics IRF540FI, IRF540 Datasheet
IRF540
IRF540FI
N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI
POWER MOSFET
TYPE V
IRF540
IRF 540FI
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENTCAPABILITY
o
■ 175
■ APPLICATIONORIENTED
COPERATINGTEMPERATURE
DS(on)
DSS
100 V
100 V
=0.050 Ω
R
DS(on)
<0.077Ω
<0.077Ω
I
D
30 A
16 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ DC-DC& DC-AC CONVERTER
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMP DRIVERS Etc.)
3
2
1
TO-220 TO-220FI
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
IRF530 IRF530FI
V
V
V
I
DM
P
Viso Ins ulation Withst a nd Voltage (DC) - 2000 V
T
(•) Pulsewidth limitedby safe operatingarea (1)ISD≤
April 1998
Drain-source Voltage (VGS=0) 100 V
DS
Drain- gate Voltage ( RGS=20kΩ)
DGR
Gat e- source Voltage ± 20 V
GS
Drain Current (cont in uous) at Tc=25oC3017A
I
D
Drain Current (cont in uous) at Tc=100oC2112A
I
D
100 V
(•) Drain Current (pulsed ) 120 120 A
Tot al Dissipat i on at Tc=25oC15045W
tot
Derating Factor 1 0.3 W/
Sto rage T emperatur e -65 to 175
stg
Max. Operat in g Junct io n Temper ature 175
T
j
30
Α, di/dt ≤ 200 A/µs, VDD≤ V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/6
IRF540/IRF540FI
THERMAL DATA
TO-220 TO 220-FI
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Unit
I
AR
E
Ther mal Resist ance Junction- ca s e Max 1 3.33
Ther mal Resist ance Junction- ambient Max
Ther mal Resist ance Case-sink Typ
Maximum Lead Te m per a t ure F or Soldering Pur p os e
l
Avalanche Current , Repet it i ve or Not - Re petitive
(pulse w idth limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max
j
62.5
0.5
300
30 A
200 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
100 V
Breakdown Volt age
I
DSS
I
GSS
Zer o Gate Volt age
Drain Curre nt (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 15 A 0.05 0. 077 Ω
Resistance
I
D(on)
On State Drain Cur rent VDS>I
D(on)xRDS(on)max
30 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacit an c e
iss
Out put Capa citance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=15A 10 20 S
VDS=25V f=1MHz VGS= 0 2600
350
85
3600
500
120
µA
µA
pF
pF
pF
2/6
Loading...