SGS Thomson Microelectronics IRF530FP Datasheet
IRF530FP
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
IRF530FP 100 V < 0.16 Ω 10 A
■ TYPICAL R
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW GATE CHARGE
■ AVALANCHE RUGGED TECHNOLOGY
■ APPLICATION ORIENT ED
DS(on)
= 0.12 Ω
o
C
CHARACTERIZATION
■ HIGH CURRENT CAPABILITY
o
■ 175
C OPERATING TEMPERATURE
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIV ER S
■ DC-DC & DC-AC CONVE RTE R
■ AUTOMO T IVE ENV RO NM E NT (I NJE CT ION,
ABS, AIR-BAG, LAMP DRIVERS, Etc)
3
2
1
TO-220FP
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
March 1998
Drain-source Voltage (VGS = 0) 100 V
DS
DGR
GS
I
D
I
D
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage ± 20 V
Drain Current (continuous) at Tc = 25 oC 10 A
Drain Current (continuous) at Tc = 100 oC7A
100 V
(•) Drain Current (pulsed) 64 A
Total Dissipation at Tc = 25 oC35W
tot
Derating Factor 0.23 W/
Insulation Withstand Voltage (DC) 2000 V
ISO
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/5
IRF530FP
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
DD
= 25 V)
4.28
62.5
0.5
300
16 A
85 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
234V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 8 A 0.12 0.16 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
10 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
ReverseTransfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 8 A 5 8 S
= 0 950
GS
150
50
1300
270
70
µA
µA
pF
pF
pF
2/5
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