SGS Thomson Microelectronics IRF530FI, IRF530 Datasheet
IRF530
N - CHANNEL ENHANCEMENT MODE
TYPE V
IRF 530
IRF 530FI
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHEDATA AT 100
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
o
■ 175
■ APPLICATIONORIENTED
C OPERATINGTEMPERATURE
DS(on)
DSS
100 V
100 V
= 0.12 Ω
CHARACTERIZATION
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ DC-DC& DC-ACCONVERTER
■ AUTOMOTIVEENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
R
DS(on)
<0.16Ω
<0.16Ω
I
D
16 A
11 A
o
C
IRF530FI
POWER MOS TRANSISTOR
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
IRF530 IRF530FI
V
V
V
I
DM
P
Viso Ins ula t ion Withst and Voltage (DC) - 2000 V
T
(•) Pulse width limited by safe operating area (1)ISD≤16 A, di/dt ≤ 200 A/µs, VDD≤ V
March 1999
Drain-source Voltage (VGS=0) 100 V
DS
Drain- ga t e V ol ta ge (RGS=20kΩ)100V
DGR
Gate-s ource Volt age ± 20 V
GS
Drain Cur rent (cont i nuous) at Tc=25oC1611A
I
D
Drain Cur rent (cont i nuous) at Tc= 100oC117.8A
I
D
(•) Drain Cur rent (pulse d) 64 64 A
Total Dissipation at Tc=25oC9040W
tot
Derating Factor 0.6 0.27 W/
St orage Tem p er at u re -65 to 175
stg
Max. Operating Junct ion Temper at u re 175
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
IRF530/FI
THERMAL DATA
TO-220 TO- 220F I
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 1 3. 75
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead T emperat ure For Soldering Purp os e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se A v alan c he E nergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max,δ <1%)
j
62.5
0.5
300
16 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA 234V
Sta t ic Drain-s our c e On
VGS=10V ID= 8 A 0.12 0.16
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
16 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=8A 5 8 S
VDS=25V f=1MHz VGS= 0 950
150
50
1300
270
70
µA
µA
Ω
pF
pF
pF
2/6
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