SGS Thomson Microelectronics IRF520, IRF520FI Datasheet
IRF520
IRF520FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
IRF 520
IRF 520FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
o
■ 175
C OPERATING TEMPERATURE
DS(on)
DSS
100 V
100 V
= 0.23 Ω
R
DS(on)
<0.27Ω
<0.27Ω
I
D
10 A
7A
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramete r Val u e Unit
IRF 52 0 IRF520FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
June 1993
Drain - s ource Voltage (VGS=0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ)100V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (cont.) at Tc=25oC107A
D
Drain Current (cont.) at Tc=100oC75A
I
D
(•) Drain Current (pulsed) 40 40 A
Total Di ssipation at Tc=25oC7035W
tot
Derat ing Factor 0.47 0.23 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/9
IRF520/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-s
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max 2.14 4.29
Thermal Resistance Junction- ambient M ax
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
62.5
0.5
300
10 A
36 mJ
9mJ
7A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 100 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
250
1000µAµA
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n
VGS=10V ID=5A 0.23 0.27 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10V 10 A
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=5A 2.7 4.5 S
VDS=25V f=1MHz VGS=0 330
90
25
450
120
40
pF
pF
pF
2/9
IRF520/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
t
d(off)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Tur n - of f Delay Time
Fall Time
t
f
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For w ar d On Voltage ISD=10A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
Charge
VDD=50V ID=5A
RGS=4.7 Ω VGS=10V
(see test circ uit)
ID=10A VGS=10V
VDD= Max Rating x 0.8
(see test circ uit)
ISD=10A di/dt=100A/µs
VDD=20V Tj=150oC
10
50
25
20
15
7
4
80
0.22
15
75
40
30
25 nC
10
40
ns
ns
ns
ns
nC
nC
A
A
ns
µC
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
3/9
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