SGS Thomson Microelectronics HCF4556B, HCF4555B Datasheet

DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXERS
455 5B O UTPUTS HIGH ON SELECT 4556B OUTPUTS LO W ON SELECT
. EXPANDABLE WITH MULTIPLE PACKAGES
.STANDARD,SYMMETRICAL OUTPUTCHAR-
ACTERISTICS
.QUIESCENT CURRENT SPECIFIED TO 20V
.5V, 10V,AND 15VPARAMETRIC RATINGS
.INPUT CURRENTOF100nA AT18VAND25°C
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD No. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTIONOF ”B” SERIESCMOS DEVICES”
HCC/H CF4 55 5B
HCC/HCF4556B
EY
(Plastic Package)
M1
(MicroPackage)
ORDER CODES:
HCC45XXBF HCF45XXBM1 HCF45XXBEY HCF45XXBC1
(CeramicFrit Seal Package)
F
C1
(Plastic Chip Carrier)
DESCRI PTIO N
The HCC4555B, HCC4556B (extended tempera­ture range) and the HCF4555B, HCF4556B (inter­mediate temperature range) are monolithic integrated circuits available in 16-lead dual in-line plastic or ceramic package and plastic micropack­age.
The HCC/HCF4555B and HCC/HCF4556B are dual one-of-four decoders/demultiplexers. Each decoderhastwo select inputs (A and B), an Enable input (E), and four mutually exclusive outputs. On theHCC/HCF4555B theoutputsarehigh on select; on the HCC/HCF4556B the outputs are low on se­lect. When the Enable input is high, the outputs of the HCC/HCF4555B remain low and the outputs of the HCC/HCF4556B remain highregardless of the stateof the selectinputs A and B.
PIN CON NEC TI O NS
4555B
4556B
June 1989
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HCC/HCF4555B/4556B
FUN CTIONAL DIAGRAMS
4555B 4556B
ABSOLUTE M AXI MUM RATING S
Symbol Parameter Value Unit
V
* Supply Voltage : HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor for Top= Full Package-temperature Range
T
Operating Temperature : HCC Types
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec­tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltagesvaluesare referredto V
Storage Temperature – 65 to + 150 °C
stg
pinvoltage.
SS
– 0.5 to + 20 – 0.5 to + 18
200 100
– 55 t o + 125
–40to+85
V V
mW mW
°C °C
RECO MM END ED OPERATING CO N D IT IONS
Symbol Parameter Valu e Unit
V
T
2/14
Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
3to18 3to15
DD
–55to+125
–40to+85
°C °C
V V
V
LOGIC DIAGRAMS
HCC/HCF4555B/4556B
4555B 4556B
TRUTH TABLE
Inputs Enable Select Outputs 4555B Outputs 4556B
E B A Q3Q2Q1Q0Q3Q2Q1Q0
0 0 0 00011110 0 0 1 00101101 0 1 0 01001011 0 1 1 10000111 1 X X 00001111
X = DON’T CARE, LOGIC 1 = HIGH, LOGIC 0 = LOW.
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HCC/HCF4555B/4556B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operatingconditions)
Test Conditions Valu e
Symbol Parameter
I
Quiescent
L
Current
HCC Types
(V) (V) (µA) (V)
0/ 5 5 5 0.04 5 150 0/10 10 10 0.04 10 300 0/15 15 20 0.04 20 600
V
V
I
O
|IO|V
DD
T
* 25°CT
Low
High
Min. Max. Min. Typ. Max. Min. Max.
0/20 20 100 0.08 100 3000 0/ 5 5 20 0.04 20 150
HCF Types
0/10 10 40 0.04 40 300 0/15 15 80 0.04 80 600
V
OH
Output High Voltage
0/ 5 < 1 5 4.95 4.95 4.95 0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95
V
OL
Output Low Voltage
5/0 < 1 5 0.05 0.05 0.05 10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05
V
IH
Input High Voltage
0.5/4.5 < 1 5 3.5 3.5 3.5 1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
V
IL
Input Low Voltage
4.5/0.5 < 1 5 1.5 1.5 1.5 9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
I
OH
Output Drive Current
HCC Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15 0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36 0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9 0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4 0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36 0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9 0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
I
OL
Output Sink Current
HCC Types
0/ 5 0.4 5 0.64 0.51 1 0.36 0/10 0.5 10 1.6 1.3 2.6 0.9 0/15 1.5 15 4.2 3.4 6.8 2.4 0/ 5 0.4 5 0.52 0.44 1 0.36
HCF Types
0/10 0.5 10 1.3 1.1 2.6 0.9 0/15 1.5 15 3.6 3.0 6.8 2.4
I
IH,IIL
(*) T (*) T The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD=15V.
Input Leakage Current
C
Input Capacitance Any Input 5 7.5 pF
I
=–55°C for HCC device : – 40°CforHCF device.
LOW
= + 125°CforHCC device : + 85°CforHCF device.
HIGH
HCC
Types
HCF
Types
0/18
0/15
Any Input
18 ± 0.1 ±10
15 ± 0.3 ±10
–5
± 0.1 ± 1
–5
± 0.3 ± 1
Unit
*
µA
V
V
V
V
mA
mA
µA
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HCC/HCF4555B/4556B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200k,
amb
typical temperature coefficientfor all VDDvalues is 0.3%/°C, all input rise and fall times = 20ns)
Symbol Parameter
t
,
Propagation Delay Time (A or B input to any output)
Propagation Delay Time (E input to any output)
,
Transition Time 5 100 200
t
t
t
PLH
PHL
TLH
THL
TypicalOutputLow (sink) Current Characteristics.
Test Conditions Value
V
(V) Min. Typ. M ax.
DD
5220440 10 95 190 15 70 140
5200400 10 85 170 15 65 130
10 50 100 15 40 80
Minimum Output Low(sink) Current Charac­teristics.
Unit
ns
ns
ns
TypicalOutputHigh (source) Current Charac­teristics.
Minimum Output High (source)Current Charac­teristics.
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