SGS Thomson Microelectronics HCF4532B Datasheet

.CONVERTSFROM1 OF8 TO BINARY

.PROVIDES CASCADING FEATURE TO

HANDLEANY NUMBER OF INPUTS

.GROUP SELECTINDICATESONE OR MORE

PRIORITYINPUTS

.QUIESCENT CURRENT SPECIFIED TO 20V

FOR HCC DEVICE

.STANDARDIZED SYMMETRICAL OUTPUT

CHARACTERISTICS

.5V, 10V,AND 15V PARAMETRIC RATINGS

.INPUTCURRENTOF100nAAT18VAND25°C

FOR HCC DEVICE

.100% TESTEDFOR QUIESCENTCURRENT

.MEETSALLREQUIREMENTSOFJEDECTEN-

TATIVE STANDARD No13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTIONOF ”B”
SERIESCMOS DEVICES”

HCC/HCF4532B

8–BIT PRIORITY ENCODER

EY

(Plastic Package)

M1

(MicroPackage)

ORDERCODES :

HCC4532BF HCF4532BM1
HCF4532BEY HCF4532BC1

(Ceramic Frit Seal Package)

(Plastic Chip Carrier)

F

C1

DESCRIPTION
TheHCC4532B (extended temperature range) and

HCF4532B (intermediate temperature range) are

monolithic integrated circuit, available in 16-lead
dual in-line plastic or ceramic package and plastic
micro package.

The HCC/HCF4532 consistsof combinational logic
that encodes the highestpriority input (D7-D0) to a
3-bit binary code. The eight inputs, D7 through D0,
each have an assigned priority. D7 is the highest
priority and D0 is the lowest. The priorityencoder is
inhibited when the chip-enable inputElislow. When
Elis high, the binary representation of the highest­priorityinputappears onoutputlinesQ2-Q0,andthe
group select line GS is high to indicate that priority
inputsarepresent.Theenable-out (EO)ishighwhen
no priorityinputsarepresent.Ifanyoneinputishigh,
EOis low and all cascaded lower-order stages are
disabled.

PIN CON NEC TI O NS

June 1989

1/15

HCC/HCF4532B

FUNCTIONAL DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

* Supply Voltage : HCC Types

DD

HCF Types

V

Input Voltage – 0.5 to VDD+ 0.5 V

i

I

DC Input Current (any one input) ± 10 mA

I

P

Total Power Dissipation (per package)

tot

Dissipation per Output Transistor
for T

T

Operating Temperature : HCC Types

op

= Full Package-temperature Range

op

HCF Types

T

Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec­tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.

Storage Temperature – 65 to + 150 °C

stg

– 0.5 to + 20
– 0.5 to + 18

200
100

– 55 to + 125

–40to+85

V
V

mW
mW

°C
°C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

2/15

V

Supply Voltage : HC C Types

DD

HCF Types

V

T

Input Voltage 0 to V

I

Operating Temperature : HCC Types

op

HCF Types

3to18
3to15

DD

–55to+125

–40to+85

V
V

V

°C
°C

LOGIC DIAGRAM

HCC/HCF4532B

TRUTH TABLE

Input Output

E

X ≡ Don’t Care Logic 1 ≡ High Logic 0 ≡ Low

D7 D6 D5 D4 D3 D2 D1 D0 GS Q2 Q1 Q0 E

I

0
1

1
1
1
1

1
1
1
1

X

0
1

0
0
0

0
0
0
0

X
0

X
1
0
0

0
0
0
0

X

0

X
X

1
0

0
0
0
0

X

0

X
X
X

1
0

0
0
0

X
0

X
X
X
X

1
0
0
0

X

0

X
X
X
X

X

1
0
0

X

0

X
X
X
X

X
X

1
0

X
0

X
X
X
X

X
X
X
1

0
0

1
1
1
1

1
1
1
1

0
0

1
1
1
1

0
0
0
0

0
0

1
1
0
0

1
1
0
0

O

0
0

0
1
0
1

1
0
1
0

0
1

0
0
0
0

0
0
0
0

3/15

HCC/HCF4532B

STATIC ELECTRICAL C HAR ACT ERISTI C S (over recommended operating conditions)

Test Conditions Value

Symbol Param ete r

I

Quiescent

L

Current

HCC
Types

HCF
Types

V

OH

Output High
Voltage

V

OL

Output Low
Voltage

V

IH

Input High
Voltage

V

IL

Input Low
Voltage

I

OH

Output
Drive
Current

HCC
Types

HCF
Types

I

OL

Output
Sink
Current

HCC
Types

HCF
Types

I

IH,IIL

Input
Leakage
Current

HCC

Types

HCF

Types

Input Capacitance Any Input 5 7.5 pF

C

I

*T

=–55°CforHCC device : – 40°CforHCF device.

Low

*T

= + 125°CforHCC device : + 85°CforHCF device.

High

TheNoiseMargin for both ”1” and ”0” levelis: 1V min.with VDD=5V, 2V min.withVDD= 10V,2.5 V min.with VDD= 15V.

V

V

O

|IO|V

I

(V) (V) (µA) (V)

T

DD

* 25 °CT

Low

Min. Max. Min. Typ. M a x. Min . Max.

High

0/ 5 5 5 0.04 5 150
0/10 10 10 0.04 10 300
0/15 15 20 0.04 20 600
0/20 20 100 0.08 100 3000
0/ 5 5 20 0.04 20 150
0/10 10 40 0.04 40 300
0/15 15 80 0.04 80 600
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95

5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05

0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7

1.5/13.5 < 1 15 11 11 11

4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 < 1 10 3 3 3

13.5/1.5 < 1 15 4 4 4
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4

0/18

18

± 0.1 ±10

–5

± 0.1 ± 1

Any Input

0/15

15 ± 0.3 ±10

–5

± 0.3 ± 1

Unit

*

µA

V

V

V

V

mA

mA

µA

4/15

HCC/HCF4532B

DYNAMIC ELECTRICAL CHARACTERISTICS (T

=25°C, CL= 50pF, RL= 200kΩ,

amb

typical temperature coefficient for all VDDvalues is 0.3%/°C, all input rise and fall times = 20ns)

Symbol Parameter

t

,

Propagation Delay Time
(EIto EO,EIto GS)

,

Propagation Delay Time
(EIto Qm, Dn to GS)

,

Propagation Delay Time
(Dn to Q

,

Transition Time 5 100 200

)

M

t

t

t

t

t

t

t

PLH

PHL

PLH

PHL

PLH

PHL

TLH

THL

Minimum Output Low (sink) Current Charac­teristics.

Test Conditions Value

V

(V) Min. Typ. Max.

DD

5110220
10 55 110
15 45 85

5170340
10 85 170
15 65 125

5220440
10 110 220
15 85 160

10 50 100
15 40 80

Typical Output High (source) Current Charac­teristics.

Unit

ns

ns

ns

ns

5/15