SGS Thomson Microelectronics HCF4521B Datasheet
24 STAGE FREQUENCY DIVIDER
■ VERYLOW QUIESCENT CURRENT
■
HIGHNOISEIMMUNITY
■ VOLTAGESUPPLYRANGE3V TO18V
■
ALLSTAGESARERESETTABLE
■ RESETDISABLESTHE RC OSCILLATORFOR
LOWSTANDBYPOWERDRAIN
■
RC AND CRYSTALOSCILLATOROUTPUT
ARECAPABLEOF DRIVING EXTERNAL
LOADS
DESCRIPTION
The HCF4521B is a monolithic integrated circuit,
available in 16-lead dual-in-line plastic package
and plasticmicro packages.
The HCF4521B have a chain of 24 flip-flops with
an input circuit that allows three modes of
operation. The input circuit functions as a crystal
or an RC oscillator or as an input buffer for an
external oscillator. Each flip-flop performs a
divide-by-twofunction giving a total count of 2
16,777,216.The count advances on the negative
goingedge of the clock.Access is available to the
final seven stages giving the device added
flexibility.
24
HCF4521B
EY
(PlasticPackage)
ORDERCODES :
HCF4521BEY HCF4521BM1
=
M1
(Micro Package)
PIN CONNECTION
February 1999
1/12
HCF4521
BLOCKDIAGRAM
ABSOLUTE MAXIMUM RATING
Symb o l Parameter Val u e Uni t
* Supply Voltage -0.5to+18 V
V
DD
Input Voltage -0.5toVDD+0.5 V
V
i
DC Input Current (any one input) ±10 mA
I
I
Total Power Dissipation (per package)
P
tot
200
mW
Dissipation per Output Transistor
for Top = Full Package Temperature Range
T
Operating Temperature -40to+85
op
Storage Temperature -65to+150
T
stg
Stressesabove those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation ofthedevice at these or any other conditions above thoseindicated in the operational sectionsof this specification is not implied. Exposure to
abso lute maximumratingconditions forexternalperiodsmayaffe c tdevicereliability.
*Allvoltage values arereferredtoV
pinvoltage.
SS
100
mW
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Parameter Val u e Uni t
V
Supply Voltage 3to15 V
DD
Input Voltage 0toV
V
I
Operating Temperature -40to+85
T
op
DD
V
o
C
2/12
FUNCTIONALDIAGRAM
HCF4521
3/12
HCF4521
STATICELECTRICAL CHARACTERISTICS
Referencesto V
Symb o l Parameter Test Conditi o s V a lue Uni t
I
Quiescent Current 0/5 5 20 0.04 20 150
L
SS
)
V
V
I
(V)
0/10 10 40 0.04 40 300
O
(V)
(over recommendedoperatingconditions, voltages
|I
O
(µA)
|
V
DD
(V)
o
C25
-40
Mi n . Max. Mi n . Typ. Max. M in. Max.
o
C85
o
C
µA
0/15 15 80 0.04 80 600
V
OH
Output High
Voltage
0/5 < 1 5 4.95 4.95 4.95
0/10 <1 10 9.95 9.95 9.95
0/15 <1 15 14.95 14.95 14.95
V
OL
Output Low
Voltage
5/0 < 1 5 0.05 0.05 0.05
10/0 <1 10 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
V
IH
Input High
Voltage
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 <1 10 7 7 7
1.5/13.5 <1 15 11 11 11
V
IL
Input Low
Voltage
4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 <1 10 3 3 3
13.5/1.5 <1 15 4 4 4
I
OH
Output Drive
Current
0/5 2.5 5 -1.53 -1.36 -3.2 -1.1
0/5 4.6 5 -0.52 -0.44 -1 -0.36
mA
0/10 9.5 10 -1.3 -1.1 -2.6 -0.9
0/15 13.5 15 -3.5 -3.0 -6.8 -2.4
I
Output Sink Current 0/5 0.4 5 0.52 0.44 1 0.36
OL
0/10 0.5 10 1.3 1.1 2.6 0.9
mA
0/15 1.5 15 3.6 3.0 6.8 2.4
I
TheNoiseMargin forboth ”1”and”0”level is:1Vmin.withVDD=5V,2 V min.withVDD=10V, 2.5V min.withVDD=15V
Input Leakage
IH,IIL
Current
C
Input Capacitance AnyInput 5 7.5
I
0/18 AnyInput 18
0.1
±
-5
0.1
10
±
±
1
±
µ
pF
V
V
V
V
A
4/12
Loading...