SGS Thomson Microelectronics HCF4511B Datasheet

BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER

. HIGH-OUTPUT-SOURCING CAPABILITY (up

to 25 mA)

.INPUTLATCHES FOR BCD CODE STORAGE

.LAMP TEST AND BLANKING CAPABILITY

.7-SEGMENT OUTPUTS BLANKED FOR BCD

INPUTCODES > 1001

.QUIESCENT CURRENT SPECIFIED TO 20V

FOR HCC DEVICE

.STANDARDIZED SYMMETRICAL OUTPUT

CHARACTERISTICS

.5V, 10V, AND 15VPARAMETRIC RATINGS

.INPUTCURRENTOF100mAAT18V AND25°C

FOR HCC DEVICE

.100% TESTEDFOR QUIESCENTCURRENT

.MEETSALLREQUIREMENTSOFJEDECTEN-

TATIVESTANDARDN°13A,”STANDARDSPE­CIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”

HCC/HCF4511B

EY

(Plastic Package)

M1

(MicroPackage)

ORDERCODES :

HCC 4511BF HCF4511BM1
HCF4511BEY HCF4511BC1

(CeramicFrit Seal Package)

C1

(Plastic Chip Carrier)

F

DESCRI PTIO N

TheHCC4511B (extendedtemperature range) and
the HCF 4511B (intermediate temperature range)
are monolithic integrated circuits available in 16-le­ad dual in-line plastic or ceramic package and pla­stic micro package.

TheHCC/HCF4511B typesareBCD-to-7-segment
latch decoder drivers constructed with COS/MOS
logic and n-p-n bipolar transistor output deviceson
a singlemonolithic structure. These devices combi­ne thelow quiescent powerdissipationandhighnoi­se immunity features of COS/MOS with n-p-n
bipolar output transistors capable of sourcingup to
25 mA. This capability allowsthe HCC/HCF4511B
typesto drive LED’s and other displays directly.

LampTest(LT), Blanking (BL), and LatchEnableor
Strobe inputs are provided to test the display, shut
off or intensity-modulate it, and store or strobe a
BCD code, respectively. Several different signal
may be multiplexed and displayed when external
multiplexing circuitry is used.

PIN CONNECTI O NS

November1996

1/16

HCC/HFC4511B

FUN CTIONAL DIAG R A M

ABSOLUTE MAXIMUM RATIN GS

Symbol Parameter Value Unit

* Supply Voltage :HCC Types

V

DD

HCF Types

V

Input Voltage – 0.5 to VDD+ 0.5 V

i

DC Input Current (any one input) ± 10 mA

I

I

P

Total Power Dissipation (per package)

tot

Dissipation per Output Transistor
for T

T

Operating Temperature : HCC Types

op

= Full Package-temperature Range

op

HCF Types

T

Stresses abovethose listed under ”Absolute MaximumRatings”may cause permanent damage to the device. This is a stressrating only and
functionnal operation of the device at theseor any other conditions abovethose indicatedin theoperationalsections ofthis specification is not
implied.Exposure toabsolute maximum ratingconditions for external periods may affectdevice reliability.

*

Allvoltage values are referred to VSSpinvoltage.

Storage Temperature – 65 to + 150 °C

stg

– 0.5 to + 20
– 0.5 to + 18

200
100

– 55 to + 125

–40to+85

V
V

mW
mW

°C
°C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

T

2/16

Supply Voltage : HCC Types

DD

HCF Types

V

Input Voltage 0 to V

I

Operating Temperature : HCC Types

op

HCF Types

3to18
3to15

DD

– 55 to + 125

–40to+85

V
V

V

°C
°C

LOGIC DIAGRAMS

HCC/HCF4511B

3/16

HCC/HFC4511B

TRUTH TABLE

LE BI LT D C B A a b c d e f g Display

XX0X X
X 0 1 X X X X 0 0 0 0 0 0 0 Blank

0110 0
0110 0
0110 0
0110 0
0110 1
0110 1
01101
0110 1
0111 0
0111 0

0 1 1 1 0 1 0 0 0 0 0 0 0 0 Blank
0 1 1 1 0 1 1 0 0 0 0 0 0 0 Blank
0 1 1 1 1 0 0 0 0 0 0 0 0 0 Blank
0 1 1 1 1 0 1 0 0 0 0 0 0 0 Blank
0 1 1 1 1 1 0 0 0 0 0 0 0 0 Blank
0 1 1 1 1 1 1 0 0 0 0 0 0 0 Blank
1 1 1 X X X X * *

X X 1 1 1 1 1 1 1

0 0 1 1 1 1 1 1 0
0 1 0 1 1 0 0 0 0
1 0 1 1 0 1 1 0 1
1 1 1 1 1 1 0 0 1
0 0 0 1 1 0 0 1 1
0 1 1 0 1 1 0 1 1
1 0 0 0 1 1 1 1 1
1 1 1 1 1 0 0 0 0
0 0 1 1 1 1 1 1 1
0 1 1 1 1 0 0 1 1

8

0
1
2
3
4
5
6
7
8
9

4/16

HCC/HCF4511B

STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)

Test Conditions Valu e

Symbol Parameter

I

Quiescent

L

Current

HCC
Types

HCF
Types

V

OH

Output High
Voltage

V

OL

Output Low
Voltage

V

IH

Input High
Voltage

V

IL

Input Low
Voltage

V

OH

Output
Drive

HCC
Types

Voltage

*T

=–55°C for HCC device : – 40°CforHCF device.

Low

*T

= +125°C for HCC device: + 85°C for HCF device.

High

TheNoise Marginfor both ”1” and”0” level is : 1V min. with VDD= 5V,2V min. withVDD=10V, 2.5 V min. withVDD= 15V.

V

V

O

|IO|V

I

(V) (V) (µA) (V)

T

DD

* 25°CT

Low

Min. Max. Min. Ty p. Max. Min. Max .

High

0/ 5 5 5 0.04 5 150
0/10 10 10 0.04 10 300
0/15 15 20 0.04 20 600
0/20 20 100 0.08 100 3000
0/ 5 5 20 0.04 20 150
0/10 10 40 0.04 40 300
0/15 15 80 0.04 80 600

0/ 5 5 4 4.1 4.55 4.2

0/10 10 9 9.1 9.55 9.2
0/15 15 14 14.1 14.55 14.2

5/0 5 0.05 0.05 0.05
10/0 10 0.05 0.05 0.05
15/0 15 0.05 0.05 0.05

0.5/3.8 5 3.5 3.5 3.5
1/8.8 10 7 7 7

1.5/13.8 15 11 11 11

3.8/0.5 5 1.5 1.5 1.5

8.8/1 10 3 3 3

13.8/1.5 15 4 4 4
0

4.1 4.10 4.55 4.20

5 4.25

10 3.80 3.90 4.10 3.90

5

15 3.95
20 3.55 3.40 3.75
25 3.40 3.10 3.55

0

9 9.10 9.55 9.20

5 9.25

10 8.85 9 9.15

10

15 9.05
20 8.70 8.60 8.90 8.40
25 8.60 8.30 8.75

0

14 14.10 14.55 14.20

5 14.30

10 13.90 14 14.20 14

15

15 14.10
20 13.75 13.70 13.95 13.50
25 13.65 13.50 13.80 13.10

Unit

*

µA

V

V

V

V

V

V

V

5/16

HCC/HFC4511B

STATIC ELECTRICAL CHARACTERISTICS (continued)

Test Conditions Valu e

Symbol Parameter

V

OH

Output
Drive
Voltage

HCF

Types

I

OL

Output
Sink
Current

HCC
Types

HCF
Types

I

IH,IIL

Input
Leakage
Current

HCC
Types

HCF
Types

C

Input Capacitance Any Input 5 7.5 pF

I

*T

=–55°C for HCC device : – 40°CforHCF device.

Low

*T

= +125°C for HCC device: + 85°C for HCF device.

High

TheNoise Marginfor both ”1” and”0” level is : 1V min. with VDD= 5V,2V min. withVDD=10V, 2.5 V min. withVDD= 15V.

V

V

O

|IO|V

I

(V) (V) (µA) (V)

0

T

DD

* 25°CT

Low

Min. Max. Min. Ty p. Max. Min. Max .

4.1 4.1 4.57 4.1

5 4.24

10 3.6 3.6 4.12 3.3

5

15 3.94
20 2.8 2.8 3.75 2.5
25 3.54

0

9.1 9.1 9.58 9.1

5 9.26

10 8.75 8.75 9.17 8.45

10

15 9.04
20 8.1 8.1 8.90 7.8
25 8.75

0

14.1 14.1 14.59 14.1

5 14.27

10 13.75 13.75 14.18 13.45

15

15 14.07
20 13.1 13.1 13.95 12.8

25 13.80
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3 6.8 2.4

0/18

18 ± 0.1 ±10

–5

± 0.1 ±1

Any Input

0/15

15 ±0.3 ±10

–5

± 0.3 ± 1

High

Unit

*

V

V

V

mA

µA

6/16

HCC/HCF4511B

DYNAMIC ELECTRICAL CHARACTERISTICS (T

=25oC, CL=50pF,RL= 200 KΩ,

amb

typic al temperature coeffic ent for all VDDvalues is 03 %/oC, all input rise and fall tim es = 20 ns)

Symbol Parameter

t

PHL

t

PLH

t

PHL

t

PLH

t

PHL

t

PLH

t

t

t

setup

t

Propagation Delay Time (data) 5 520 1040

Propagation Delay Time (data) 5 660 1320

Propagation Delay Time (BL) 5 350 700

Propagation Delay Time (BL) 5 400 800

Propagation Delay Time (LT) 5 250 500

Propagation Delay Time (LT) 5 150 300

Transition Time 5 40 80

TLH

Transition Time 5 125 310

THL

Setup Time 5 150 75

Hold Time 5 0 -75

hold

Strobe Pulse Width 5 400 200

t

W

Test Conditions Value

(V) Min. Typ. Max.

V

DD

10 210 420
15 150 300

10 260 520
15 180 360

10 175 350
15 125 250

10 175 350
15 150 300

10 125 250
15 85 170

10 75 150
15 50 100

10 30 60
15 20 40

10 75 185
15 65 160

10 70 35
15 40 20

10 0 -35
15 0 -20

10 160 80
15 100 50

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ms

7/16

HCC/HFC4511B

TypicalOutputLow (sink) Current Characteristics. Typical data-to-output, low-to-high-level propaga-

tion delay time as a function of load capacitance.

Typicaldata-to-output, high-to-low-level propaga­tion delay time as a function of loadcapacitance.

Typical high-to-low level transition ime as a func­tion of load capacitance.

Typicallow-to-high level transitionime as a func­tion of load capacitance.

TypicalVoltage drop (VDDtooutput) vs. Output
source Current as a Function of Supply.

8/16

HCC/HCF4511B

TypicalDynamic Power Dissipation Charac-

Derated Static Output Current PerOutput.

teristics.

Maximumcontinuous derated output currentIOH appliesto a single
outputwith allother outputs sourcing an equalamount of currentat
the supplyvoltages shown. Operationabove the deratingcurve is
not recommenced.

TYPICAL APPLICA TI ONS (inter faci ng w ith variou s disp lays)
DRIVINGCOMMON-CATHODE 7-SEGMENT LED DISPLAYS

9/16

HCC/HFC4511B

TYPICAL APPLICA TI ONS (cont inued)

Driving Low-voltage Fluorescent Displays. Driving Incandescent Displays.

Amedium-brightness intensitydisplay can be obtained withlow­voltagefluorescent displays such as the Tung-Sot Digivac S/G
series.

TEST CIRCUITS

QuiescentDevice Current.

Input Leakage Current.

2 of 7 SegmentsShownConnected

Resistors R from VDD VDD to each 7-segment driver output
arechoosen to keep allNumitronsegments slightlyon and
warm.

Noise Immunity.

Data Propagation Delay.

10/16

TEST CIRCUITS (contin ue d)
Dynamic Power dissipation.

HCC/HCF4511B

11/16

HCC/HFC4511B

Plastic DIP16 (0.25) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.77 1.65 0.030 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 17.78 0.700

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 0.050

mm inch

12/16

P001C

Ceramic DIP16/1 MECHANICAL DATA

HCC/HCF4511B

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7 0.276
D 3.3 0.130
E 0.38 0.015

e3 17.78 0.700

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

mm inch

P053D

13/16

HCC/HFC4511B

SO16 (Narrow) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 9.8 10 0.385 0.393

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 8.89 0.350

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.62 0.024

S8°(max.)

mm inch

14/16

P013H

PLCC20 MECHANICAL DATA

HCC/HCF4511B

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

P027A

15/16

HCC/HFC4511B

Information furnished is believed to be accurate and reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third partieswhich may results from its use. No
licenseis grantedby implication or otherwise under any patent or patent rights of SGS-THOMSONMicroelectronics. Specifications mentioned
in this publication are subject to changewithoutnotice. Thispublication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorizedfor use ascriticalcomponents in lifesupport devices or systems without express
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics -Printedin Italy- AllRightsReserved

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