SGS Thomson Microelectronics HCF4503 Datasheet

1 TTL-LOADOUTPUTDRIVE CAPABILITY
2 OUTPUT-DISABLECONTROLS
3STATEOUTPUTS
5V,10V,AND15VPARAMETRICRATINGS
QUIESCENTCU R R ENTSPEC IFIEDUPTO
INPUT CURRENT OF300nA AT 15VAND
25°C
100%TEST EDFOR QUIESCENTCU R R EN T
MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD N
0
. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIESCMOS DEVICES”
DESCRIPTION
The HCF4503B is a monolithicintegrated circuits, available in 16-lead dual in-line plastic package and plastic micro package.
HCF4503
HEX BUFFER
SOPDIP
ORDER CODES
PACK AG E TUBE T & R
DIP HCF4503BEY
SOP HCF4503BM1 HCF4503M013TR
The HCF4503B is a hex noninverting buffer with 3-state outputs having high sink and source-current capability. Two disable controls are provided, one of which controls four buffers and the other controls the remainingtwo buffers.
PIN CONNECTION
February 2000
1/10
HCF4503B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATING
Symb o l Parameter Val u e Uni t
* Supply Voltage -0.5 to +18 V
V
DD
Input Voltage -0.5 to VDD+ 0.5 V
V
i
DC Input Current (any one input) ± 10 mA
I
I
Total Power Dissipation (per package)
P
tot
200
mW Dissipation per Output Transistor for Top = Full Package Temperature Range
T
Operating Temperature -40 to +85
op
Storage Temperature -65 to +150
T
stg
Stresses above those listedunder ”Absolute Maximum Ratings” may cause permanent damage to thedevice. Thisisa stress rating only and functional operation ofthedevice atthese orany otherconditions above those indicated inthe ope rational sections of this specification is not implied. Exposure to abso lute max im u mratingconditio n s for externalperiod smayaffect devicereliability. *Allvoltagevalues arereferredtoV
pinvoltage.
SS
100
mW
o
C
o
C
RECOMMENDED OPERATING CONDITIONS
Symb o l Parameter Val u e Uni t
V
Supply Voltage 3 to 15 V
DD
Input Voltage 0 to V
V
I
Operating Temperature -40 to +85
T
op
DD
V
o
C
2/10
LOGICDIAGRAM AND TRUTH TABLE
HCF4503B
DN DIS A (B) QN
000 101 X 1 High Z
X= Don’tcare
3/10
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