SGS Thomson Microelectronics HCF4502B Datasheet

STROBED HEX INVERTER/BUFFER
. 2 TTL-LOAD OUTPUTDRIVECAPABILITY
.3-STATE OUTPUTS
.COMMONOUTPUT-DISABLE CONTROL
.INHIBITCONTROL
.QUIESCENT CURRENT SPECIFIED TO 20V
.5V, 10V,AND 15VPARAMETRIC RATINGS
.INPUTCURRENTOF100nAAT18V AND25°C
.100%TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD N°. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTIONOF”B” SERIESCMOSDEVICES”
HCC/HCF4502B
EY
(Plastic Package)
M1
MicroPackage
ORDERCODES :
HCC4502BF HCF4502BM1 HCF4502BEY HCF4502BC1
(Ceramic Frit SealPackage)
F
C1
(Plastic ChipCarrier)
DESCRI PTIO N TheHCC4502B(extended temperature range) and
HCF4502B (intermediate temperature range) are
monolithic integrated circuit, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF 4502B consists of six inverter-buffers with 3-state outputs. A logic ”1” on the OUTPUT DISABLE input produces a high­impedance state in all sixoutputs. This feature per­mitscommonbusing ofthe outputs, thussimplifying systemdesign. A logic”1” ontheINHIBITinputswit­ches all six outputs to logic”0” iftheOUTPUTDIS­ABLE input is a logic ”0”. This device is capable of driving two standard TTLloads, whichisequivalent to six times the JEDEC ”B” series IOLstandard.
PIN CO N NEC TI O NS
June 1989
1/11
HCC/HCF4502B
ABSOLUTE M AXI MUM RATIN G S
Symbol Parameter Value Unit
V
* Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor for Top= Full Package-temperature Range
T
Operating Temperature : HCC Types
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec­tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. *
Allvoltage values arereferredto VSSpinvoltage.
Storage Temperature – 65 to + 150 °C
stg
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
Supply Voltage : HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
– 0.5 to + 20 – 0.5 to + 18
200 100
– 55 to + 125
–40to+85
3to+18 3to+15
DD
– 55 to + 125
–40to+85
V V
mW mW
°C °C
V V
V
°C °C
TRUTH TABLE
Disab le Inh ib i t D n Qn
0001 00I0 0IX0
IXXZ
X = don’t care Z = high impedance Logic 1 = high Logic 0 = low
2/11
HCC/HCF4502B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value
V
V
Symbol Parameter
I
Quiescent
L
Current
HCC Types
I
(V) (V) (µA) (V)
0/ 5 5 1 0.02 1 30 0/10 10 2 0.02 2 60 0/15 15 4 0.02 4 120
O
|IO|V
DD
0/20 20 20 0.04 20 600
0/ 5 5 4 0.02 4 30
HCF Types
OH
Output High
V
Voltage
0/10 10 8 0.02 8 60 0/15 15 16 0.02 16 120
0/ 5 < 1 5 4.95 4.95 4.95 0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95
OL
Output Low
V
Voltage
5/0 < 1 5 0.05 0.05 0.05 10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05
V
IH
Input High Voltage
0.5/4.5 < 1 5 3.5 3.5 3.5 1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
IL
Input Low
V
Voltage
4.5/0.5 < 1 5 1.5 1.5 1.5 9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
I
OH
Output Drive Current
HCC Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 –1.15
0/ 5 4.6 5 –0.64 –0.51 – 1 –0.36 0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9 0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 –1.53 –1.36 – 3.2 – 1.1
HCF Types
0/ 5 4.6 5 –0.52 –0.44 – 1 –0.36 0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9 0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
OL
Output Sink Current
HCC Types
I
0/ 5 0.4 5 3.84 3.06 6 2.10 0/10 0.5 10 9.6 7.8 15.6 5.4 0/15 1.5 15 25.2 20.4 40.8 14.4
0/ 5 0.4 5 3.11 2.6 6 2.10
HCF Types
I
IH,IIL
Input Leakage Current
HCC Types
HCF Types
I
OH,IOL
3-state Output
HCC Types
HCF Types
C
Input Capacitance Any Input 5 7.5 pF
I
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
=+125°C for HCC device : + 85°C for HCF device.
High
TheNoise Margin for both”1” and”0” levelis : 1Vmin. with VDD=5V, 2V min. with VDD= 10V,2.5V min.with VDD= 15V.
0/10 0.5 10 7.05 6.63 15.6 5.61 0/15 1.5 15 20.4 17.3 40.8 14.2
0/18
18 ± 0.1 ±10
Any Input
0/15
15 ± 0.3 ±10
0/18 18 ± 0.4 ±10
0/15 15 ± 1.0
T
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
–5
± 0.1 ± 1
–5
± 0.3 ± 1
–4
± 0.4 ± 12
–4
± 1.0 ± 7. 5
±10
High
*
Unit
µA
V
V
V
V
mA
mA
µA
µA
3/11
HCC/HCF4502B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C,CL= 50 pF, RL= 200 k
amb
typical temperature coefficient for all VDDvalues is 0.3 %/°C, all input rise and fall times = 20 ns)
Symbol Parameter
t
PHL
t
PLH
t
PHZ
Data or Inhibit Delay Time 5 135 270
Data or Inhibit Delay Time 5 190 380
Disable Delay Time (output high to high impedance)
t
PZH
Disable Delay Time (high impedance to output high)
t
PL Z
Disable Delay Time (output low to high impedance)
t
PZL
Disable Delay Time (high impedance to output low)
t
t
TLH
THL
Tansition Time 5 100 200
Transition Time 5 60 120
Test Conditions Value
V
(V) Min. Typ. Max.
DD
10 60 120 15 40 80
10 90 180 15 65 30
560120 10 40 80 15 30 60
5110220 10 50 100 15 40 80
5125250 10 65 130 15 55 110
5125250 10 55 110 15 40 80
10 50 100 15 40 80
10 30 60 15 20 40
Unit
ns
ns
ns
ns
ns
ns
ns
ns
teristics.
4/11
TypicalOutput Low (sink) Current.Minimum Output High (source) Current Charac-
HCC/HCF4502B
Minimum Output Low (sink) Current Charac­teristics.
TypicalOutput High (source) Current Charac­teristics.
TypicalTransition Time vs. Load Capacitance. Typical Propagation Delay Time vs. Load Capacit-
ance.
TEST CIRCUIT
QuiescentDevice Current. Input Voltage.
5/11
HCC/HCF4502B
TEST CIRCUIT (continued)
Input Leakage Current.
TEST CIRCUITAND WAVEFORMS
DisableDelayTime.
Test Conditions
Test Pin 1 5 Point A
t
t t
t
PHZ
PZH
PLZ PZL
V
SS
V
DD
V
DD
V
SS
6/11
V
SS
V
DD
V
DD
V
SS
Plastic DIP16 (0.25) MECHANICAL DATA
HCC/HCF4502B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
mm inch
P001C
7/11
HCC/HCF4502B
Ceramic DIP16/1 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787 B 7 0.276 D 3.3 0.130 E 0.38 0.015
e3 17.78 0.700
F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406 P 7.8 8.05 0.307 0.317
Q 5.08 0.200
mm inch
8/11
P053D
SO16 (Narrow) MECHANICAL DATA
HCC/HCF4502B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068 a1 0.1 0.2 0.004 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019 c1 45° (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8°(max.)
mm inch
P013H
9/11
HCC/HCF4502B
PLCC20 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356
D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015
G 0.101 0.004 M 1.27 0.050
M1 1.14 0.045
mm inch
10/11
P027A
HCC/HCF4502B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsability for the consequences of use of such information norfor any infringement of patents or other rights of third partieswhich mayresults from its use.No license isgrantedby implicationor otherwiseunderany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned in this publicationare subjectto change without notice. This publication supersedes andreplaces all informationpreviously supplied. SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevicesorsystems withoutexpress written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSONMicroelectronics - All Rights Reserved
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11/11
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