SGS Thomson Microelectronics HCF4093BM1, HCF4093BEY, HCF4093BC1, HCC4093BF Datasheet
QUAD 2-INPUT NAND SCHMIDT TRIGGERS
.SCHMITT-TRIGGERACTIONONEACHINPUT
WITH NOEXTERNAL COMPONENTS
.HYSTERESIS VOLTAGE TYPICALLY 0.9V AT
VDD=5V AND 2.3VAT VDD= 10V
.NOISE IMMUNITY GREATER THAN 50% OF
VDD(typ.)
.NO LIMIT ON INPUTRISEAND FALL TIMES
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.5V, 10V, AND 15V PARAMETRIC RATINGS
.INPUT CURRENT OF 100nA AT 18V AND
25°C FORHCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD N°. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
HCC/HCF4093B
EY
(Plastic Package)F(Ceramic Frit Seal Package)
M1
(MicroPackage)
ORDERCODES :
HCC4093BF HCF4093BM1
HCF4093BEY HCF4093BC1
(Plastic Chip Carrier)
C1
DESCRIPTION
TheHCC4093B(extended temperature range) and
HCF4093B (intermediate temperature range) are
available in 14-lead dual in-line plastic or ceramic
package and plastic micropackage. The
HCC/HCF4093BconsistsoffourSchmitt-triggercircuits. Each circuit functions as a two-input NAND
gate withSchmitt-trigger actionon both inputs. The
gate switches at different points for positive and negative-going signals.
The difference between the positive voltage (VP)
and the negative voltage (VN) is defined as hysteresisvoltage (VH) (see fig.1).
PIN CO N NEC TI O NS
June 1989
1/13
HCC/HCF4093B
FUNCTIONAL DIAGRAM
1 of 4 Schmitt triggers
ABSOLUTE M AX IMU M RATI NG S
Symbol Parameter Val ue Unit
V
* Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
I
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for T
T
Operating Temperature : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings ”may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20
– 0.5 to + 18
200
100
–55to+125
–40to+85
V
V
mW
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
2/13
Supply Voltage : HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
3to18
3to15
DD
– 55 to + 125
–40to+85
V
V
V
°C
°C
HCC/HCF4093B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value
V
Symbol Parameter
V
I
O
|IO|V
(V) (V) (µA) (V)
I
L
Quiescent
Current
HCC
Types
0/ 5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
HCF
Types
V
Positive Trigger
P
Threshold Voltage
0/ 5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
a 5 2.2 3.6 2.2 2.9 3.6 2.2 3.6
a 10 4.6 7.1 4.6 5.9 7.1 4.6 7.1
a 15 6.8 10.8 6.8 8.8 10.8 6.8 10.8
b 5 2.6 4 2.6 3.3 4 2.6 4
b 10 5.6 8.2 5.6 7 8.2 5.6 8.2
b 15 6.3 12.7 6.3 9.4 12.7 6.3 12.7
V
Negative Trigger
N
Threshold Voltage
a 5 0.9 2.8 0.9 1.9 2.8 0.9 2.8
a 10 2.5 5.2 2.5 3.9 5.2 2.5 5.2
a 15 4 7.4 4 5.8 7.4 4 7.4
b 5 1.4 3.2 1.4 2.3 3.2 1.4 3.2
b 10 3.4 6.6 3.4 5.1 6.6 3.4 6.6
b 15 4.8 9.6 4.8 7.3 9.6 4.8 9.6
V
Hysteresis Voltage a 5 0.3 1.6 0.3 0.9 1.6 0.3 1.6
H
a 10 1.2 3.4 1.2 2.3 3.4 1.2 3.4
a 15 1.6 5 1.6 3.5 5 1.6 5
b 5 0.3 1.6 0.3 0.9 1.6 0.3 1.6
b 10 1.2 3.4 1.2 2.3 3.4 1.2 3.4
b 15 1.6 5 1.6 3.5 5 1.6 5
OH
Output High
V
Voltage
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
OL
Output Low
V
Voltage
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
OH
Output
Drive
Current
HCC
Types
I
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF
Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
a : input on terminals 1, 5, 8, 12 or 2, 6, 9, 13 ; other inputs to VDD.
b : input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13 ; other inputs to VDD.
*T
=–55°CforHCC device : -40°Cfor HCF device.
Low
*T
= +125°CforHCC device : +85°C for HCF device.
High
T
DD
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
High
*
Unit
µA
V
V
V
V
V
mA
3/13
HCC/HCF4093B
STATIC ELECTRICAL CHARACTERISTICS( continued)
Test Conditions Valu e
Symbol Parameter
I
OL
Output
Sink
Current
I
IH,IIL
Input
Leakage
Current
HCC
Types
HCF
Types
Input Capacitance Any Input 5 7.5 pF
C
I
V
V
O
|IO|V
I
(V) (V) (µA) (V)
T
DD
Low
Min. Ma x. Min. Typ. Max. Min. Max.
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
0/18
18 ± 0.1 ± 10
Any Input
0/15
15 ± 0.3 ± 10
* 25°CT
-5
± 0.1 ± 1
-5
± 0.3 ± 1
High
*
Unit
mA
µA
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficient for all VDD= 0.3%/°C values , all input rise and fall time = 20ns)
Symbol Parameter
t
PLH,tPHL
t
TL H,tTHL
Propagation Delay Time 5 190 380
Transition Time 5 100 200
Test Conditions
V
(V) Min. Typ . Max.
DD
10 90 180
15 65 130
10 50 100
15 40 80
Value
Figure1 : HysteresisDefinition, Characteristics and TestSetup.
(a) Definition of VP,VNand V
H
(b) Transfer characteristics of 1of 4 gates
Unit
ns
ns
4/13
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