TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTIONOF ”B”
SERIESCMOS DEVICES”
HCC4 07 0/7 7B
HCF4070/77B
GATES
=
EY
(PlasticPackage)
M1
(MicroPackage)
(CeramicPackage)
F
C1
(Chip Carrier)
DESCRIPTION
The HCC4070B/4077B (extended temperature
range) and HCF4070B/4077B (intermediate tem-
perature range) are monolithic integrated circuits,
available in 14-lead dual in-line plastic or ceramic
package and plasticmicropackage.
TheHCC/HCF4070B andHCC/HCF4077Bprovide
the system designer with a means for direct implementation of the exclusive-OR and exclusiveNOR function, respectively. For applications as
Logical comparators, Adders/subtractors, Parity generatorsand checkers.
HCC4 0XX BFHCF40XXBM 1
ORDER CODES :
HCF40XXBEYHCF40XXBC1
PIN CONNECTIONS
4070B
4077B
September 1988
1/11
HCC/HCF4070B/4077B
FUN CTIONAL DIAG R A M
4070B4077B
ABSOLU TE MAXIMUM RATING
SymbolParameterValueUnit
*Supply Voltage: HCC Types
V
DD
HCF Types
V
P
Input Voltage-0.5 to VDD+ 0.5V
i
I
DC Input Current (any one input)± 10mA
I
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for Top = Full Package Temperature Range
T
Operating Temperature: HCC Types
op
HCF Types
T
Stressesabove those listedunder”AbsoluteMaximum Ratings”maycausepermanent damagetothedevice.Thisisastressratingonlyand functional
operation of the device at these or any otherconditions above thoseindicated in theoperational sections of thisspecificationisnotimplied.Exposure
to absolute maximum ratingconditionsforexternal periods mayaffect device reliability.
* All voltagevalues are referred to VSSpinvoltage.
Storage Temperature-65 to +150
stg
-0.5 to +20
-0.5 to +18
200
100
-55 to +125
-40 to +85
V
V
mW
mW
o
C
o
C
o
C
RECO MM ENDED OPERAT IN G C ONDITIO NS
SymbolParameterValueUnit
V
Supply Voltage: HCC Types
DD
HCF Types
V
T
Input Voltage0 to V
I
Operating Temperature: HCC Types
op
HCF Types
3to18
3to15
DD
-55 to +125
-40 to +85
TRUTH TABLES (1 of 4 gates)
2/11
HCC4070B
ABJ
000
101
011
110
ABJ
001
100
010
111
HCC4077B
V
V
V
o
C
o
C
HCC/HCF4070B/4077B
STATI C ELECTRICAL CHARACTE R ISTI CS (over rec ommended o peratin g conditi ons)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability forthe
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplicationor otherwise under any patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedforuse ascriticalcomponentsinlifesupportdevicesorsystemswithoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-