SGS Thomson Microelectronics HCF4068B Datasheet
HCC/HCF4068B
8-INPUT NAND/AND GATE
.MEDIUM-SPEED OPERATION – t
75ns (typ.) AT 10V
PHL,tPLH
.BUFFEREDOUTPUT
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.5V, 10V,AND 15VPARAMETRIC RATINGS
.INPUT CURRENTOF100nAAT18VAND 25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENT CURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVESTANDARDN°13A,”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
=
EY
(Plastic Package)F(CeramicFrit Seal Package)
M1
(MicroPackage)
ORDER CODES :
HCC4068BF HCF4068BM1
HCF4068BEY HCF4068BC1
PIN CONNECTIONS
(PlasticChipCarrier)
C1
DESCRIPTI ON
TheHCC4068B (extended temperature range) and
HCF4068B (intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micro package. The HCC/HCF4068B NAND/AND
gate provides the system designer with direct implementation ofthe positive-logic8-input NANDand
AND functions andsupplements the existing family
of COS/MOS gates.
June1989
1/10
HCC/HCF4068B
ABSOLUTE M AXI MUM RATIN G S
Symbol Parameter Value Unit
* Supply Voltage :HC C Types
V
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for T
T
Operating Temperature : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
– 0.5 to + 20
– 0.5 to + 18
200
100
– 55 to + 125
–40to+85
3to18
3to15
DD
–55to125
–40to85
V
V
mW
mW
°C
°C
V
V
V
°C
°C
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value
Symbol Parameter
I
Quiescent
L
Current
HCC
Types
HCF
Types
V
OH
Output High
Voltage
V
OL
Output Low
Voltage
V
IH
Input High
Voltage
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
V
V
O
|IO|V
I
(V) (V) (µA) (V)
T
DD
* 25°CT
Low
Min. Max. Min. Typ. M ax. Min. Max.
High
*
0/ 5 5 0.25 0.01 0.25 7.5
0/10 10 0.5 0.01 0.5 15
0/15 15 1 0.01 1 30
0/20 20 5 0.02 5 150
0/ 5 5 1 0.01 1 7.5
0/10 10 2 0.01 2 15
0/15 15 4 0.01 4 30
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
Unit
µA
V
V
V
2/10
HCC/HCF4068B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions Value
Symbol Parameter
V
IL
Input Low
Voltage
I
OH
Output
Drive
Current
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
I
IH,IIL
Input
leakage
Curent
HCC
Types
HCF
Types
Input Capacitance Any Input 5 7.5 pF
C
I
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
V
V
O
|IO|V
I
(V) (V) (µA) (V)
T
DD
* 25°CT
Low
Min. Max. Min. Typ. M ax. Min. Max.
4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
0/18
18 ± 0.1 ±10
–5
± 0.1 ± 1
Any Input
0/15
15 ± 0.3 ±10
–5
± 0.3 ± 1
High
*
Unit
V
mA
mA
µA
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficient for all VDDvalues is 0.3%/°C, all input rise and fall times = 20ns)
Symbol Parameter
t
PHL,tPLH
t
TLH,tTHL
Propagation Delay Time 5 150 300
Transition Time 5 100 200
Test Conditions Value
V
(V) Min. Typ. Ma x.
DD
10 75 150
15 55 110
10 50 100
15 40 80
Unit
ns
ns
3/10
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