Datasheet HCF4066BM1, HCF4066BEY, HCF4066BC1, HCC4066BF Datasheet (SGS Thomson Microelectronics)

QUAD BILATERAL SWITCHFOR TRANSMISSION
OR MULTIPLEXINGOF ANALOG ORDIGITAL SIGNALS
.15V DIGITAL OR ± 7.5V PEAK-TO-PEAK
SWITCHING
.80TYPICAL ON RESISTANCE FOR 15V
OPERATION
WITHIN 5 OVER 15V SIGNAL-INPUT RANGE
.ON RESISTANCE FLAT OVER FULL PEAK-
TO-PEAKSIGNALRANGE
.HIGH ON/OFFOUTPUT-VOLTAGE RATIO:
65dB TYP.@ fis= 10kHz,RL= 10k
.HIGH DEGREE OF LINEARITY : < 0.5% DIS-
TORTIONTYP. @ fis= 1kHz, Vis= 5 Vp-p, VDD–VSS≥ 10V,RL=10k
.EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET CUR­RENT AND HIGH EFFECTIVE OFF RESIST­ANCE; 10pA TYP. @ VDD–VSS= 10V, TA=25°C
.EXTREMELY HIGH CONTROL INPUTIMPED-
ANCE (control circuit isolated from signal cir­cuit): 1012Ω TYP.
.LOW CROSSTALK BETWEEN SWITCHES:–
50dB TYP.@ fis= 0.9MHz,RL=1k
.MATCHED CONTROL-INPUT TO SIGNAL-
OUTPUT CAPACITANCE : REDUCES OUT­PUT SIGNALTRANSIENTS
.FREQUENCYRESPONSE,SWITCH ON =
40MHz (typ.)
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.5V, 10V, AND 15V PARAMETRIC RATINGS
.INPUT CURRENT OF 100nAAT 18V AND 25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD No. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIESCMOS DEVICES”
HCC/HCF4066B
EY
(Plastic Package)F(Ceramic FritSeal Package)
M1
(MicroPackage)
ORDER CODES :
HCC4066BF HCF4066BM1 HCF4066BEY HCF4066BC1
PIN CONNECTIONS
(PlasticChipCarrier)
C1
DESCRIPTI ON TheHCC4066B (extended temperature range) and
HCF4066B (intermediate temperature range) are
monolithic integrated circuits, available in 14-lead dual in-line plastic or ceramic package and plas­tic micropackage. The HCC/HCF4066B is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-for-
June1989
1/11
HCC/HCF4066B
pin compatiblewithHCC/HCF4016B, butexhibits a much lower ON resistance. In addition, the ON re­sistanceis relativelyconstantoverthe full input-sig­nal range. The HCC/HCF4066B consists of four independent bilateralswitches.Asinglecontrol sig­nal is required per switch.Both the p and the n de­vice in a given switch are biased ON or OFF simultaneously by the control signal. As shown in schematicdiagram, the wellof then-channel device
configuration eliminates the variation of theswitch­transistor threshold voltage with input signal, and thus keepsthe ON resistance low over the fulloper­ating-signal range. The advantages over single­channel switches include peak input signal voltage swings equal to the full supply voltage, and more constant ON impedance over the input-signal range. For sample-and-hold applications, however,
the HCC/HCF4016B is recommended. on each switch is either tied to the input when the switchis ON or to VSSwhentheswitchis OFF.This
SCHEM ATIC D IA GRAM
1 OF 4 IDENTICALSWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY.
ABSOLUTE M AXIMUM RAT IN G S
Symbol Parameter Value Unit
* Supply Voltage :HC C Types
V
DD
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
DC Input Current (any one input) ± 10 mA
I
I
P
T
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSSpin voltage.
2/11
Total Power Dissipation ( per package)
tot
Dissipation per Output Transistor for T
Operating Temperature : HCC Types
op
Storage Temperature – 65 to + 150 °C
stg
= Full Package-temperature Range
op
HCF Types
HCF Types
– 0.5 to + 20 – 0.5 to + 18
200 100
– 55 t o + 125
–40to+85
V V
mW mW
°C °C
HCC/HCF4066B
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
ELECTRICAL CHARACTERISTICS
(T
amb
Symbol Parameter
SIGNAL I N PU T S (V
R
ON Resistance
TDH Total Harmonic
*T
Low
*T
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
=25°C,typical temperature coefficient forall VDDvalues is 0,3%/°C)
Test Conditions Value
T
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
I
L
Quiescent Device Current (all switches ON or all switches OFF)
HCC Types
HCF Types
0/ 5 5 0.25 0.01 0.25 7.5 0/10 10 0.5 0.01 0.5 15 0/15 15 1 0.01 1 30 0/20 20 5 0.02 5 150 0/ 5 5 1 0.01 1 7.5 0/10 10 2 0.01 2 15 0/15 15 4 0.01 4 30
) and Outputs (Vos)
is
ON
On Resistance
HCC Types
HCF
V
C=VDD
RL= 10KReturn
V
________
DD–VSS
to
2
V
is=VSS
to V
DD
Types
RL10k,VC=VDD515 between any 2 Switches, R
Distorsion
- 3 dB Cutof f Frequency(switch on)
ON
V
C=VDD
V
SS
V
is
(sinewave centeredin 0V)
R
L
f
is
V
C=VDD
V
SS
V
is
(sine wave c entured on
= 5V,
= – 5V,
(p-p) = 5V
= 10k ,
= 1kHz s ine wav e
=5V,
=–5V,
(p-p) = 5V
0V)
=1k
R
L
=–55°CforHCC device : – 40°CforHCF device.
= + 125°CforHCC device : + 85°CforHCF device.
V
IVDD
(V) (V)
5 800 470 1050 1300 10 310 180 400 550 15 200 125 240 320
5 850 470 1050 1200 10 330 180 400 500 15 210 125 240 300
10 10 15 5
3to18 3to15
– 55 t o + 125
–40to+85
0.4
40
DD
High
°C °C
*
Unit
µA
%
MHz
V V
V
3/11
HCC/HCF4066B
ELECTRICAL CHARACTERISTICS(continued)
Test Conditions Va lu e
Symbol Parameter
V
(V)
-50dB Feedthrough Frequency(switch off)
- 50 dB Crosstalk Frequency
V
C=VSS
V
is
(sine wave centured on 0V) R
L
V
C
VC(B) = VSS=–5V V
is
=–5V,
(p-p) = 5V
=1k (A) = VDD=+5V
(A) = 5Vp-p, 50source R
=1k
L
PropagationDelay
t
pd
(signal input to signaloutput)
RL= 200k VC=VDD,VSS= GND, C
= 50pF , Vis=10V
L
(square wave centured on 5V) t
= 20ns
r,tf
C
Input Capacitance VDD=+5V
is
Output
C
os
VC=VSS=–5V
Capacitance
C
CONTROL (V
V
V
Feedthrough 0.5
ios
Input/Output Leakage Current Switch OFF
Control Input Low
ILC
Voltage
Control Input High
IHC
Voltage
)
C
V
HCC Types
HCF Types
C
V
is
=0V V
is
=18V V
C
V
is
=0V V
is
=15V
Iis <10µA Vis=VSS,Vos=V and Vis=VDD,Vos=V
=0V = 18V ; V
=0V;V
=0V = 15V ; V
=0V;V
os
os
os
os
18
15 ± 0.3 ±10
DD
10 2 2 2 15 2 2 2
SS
10 7 7 7 15 11 11 11
I
IH,IIL
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
Input Leakage Current
HCC
Vis≤ V
Types
VDD–VSS= 18V
HCF
V VCC≤ VDD–V
Types
DD
DD–VSS
= 15V
SS
18 ± 0.1 ±10
15 ± 0.3 ±10–5± 0.3 ± 1
T
DD
* 25°CT
Low
* Unit
High
Min. Max. Min. Typ. Max. Min. Max.
1MHz
8MHz
52040
10 10 20
ns
15 7 15
8
pF
± 0.1 ±10
8
–3
± 0.1 ± 1
µA
–3
± 0.3 ± 1
51 11
V
5 3.5 3.5 3.5
V
–5
± 0.1 ± 1
µA
4/11
HCC/HCF4066B
ELECTRICAL CHARACTERISTICS (continued)
Test Condi t io n s Va lue
Symbol Parameter
V
DD
(V)
Crosstalk(control input to signal output)
Turn-on Propagation Delay
Control Input Repetition Rate
= 10V (sq. wave)
V
C
tr,tf=20ns R
=10k
L
V
IN=VDD
tr,tf=20ns CL=50pF R
=1k
L
V
is=VDD,VSS
R
=1kΩto gnd
L
10 50 mV
53570 10 20 40 15 15 30
= GND
56
CL=50pF V
= 10V (square
C
wave c entured on
10 9
5V) t
=20ns
r,tf
Vos=1/2Vos@1kHz
C
Input Capacitance Any Input 5 7.5 pF
I
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
15 9.5
T
* 25 °CT
Low
* Unit
High
Min. Max. Min. Typ. Max. Min. Max.
ns
MHz
TYPICAL APPLI CA TI O NS
BIDIRECTIONALSIGNAL TRANSMISSION VIA DIGITAL CONTROL LOGIC
5/11
HCC/HCF4066B
TYPICAL APPLI CA TI O NS (continued )
4-CHANNEL PAM MULTIPLEX SYSTEMDIAGRAM.
6/11
Plastic DIP14 MECHANICAL DATA
HCC/HCF4066B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
mm inch
P001A
7/11
HCC/HCF4066B
Ceramic DIP14/1 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015
e3 15.24 0.600
F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012
M 1.52 2.54 0.060 0.100
N 10.3 0.406 P 7.8 8.05 0.307 0.317
Q 5.08 0.200
mm inch
8/11
P053C
SO14 MECHANICAL DATA
HCC/HCF4066B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019 c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8°(max.)
mm inch
P013G
9/11
HCC/HCF4066B
PLCC20 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356
D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015
G 0.101 0.004 M 1.27 0.050
M1 1.14 0.045
mm inch
10/11
P027A
HCC/HCF4066B
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publicationare subject to changewithout notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproductsare notauthorized for use ascritical componentsinlife supportdevices or systemswithout express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
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11/11
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