SGS Thomson Microelectronics HCF4041UB Datasheet
QUAD TRUE/COMPLEMENT BUFFER
.BALANCED SINK AND SOURCE CURRENT ;
APPROXIMATELY 4 TIMES STANDARD ”B”
DRIVE
.EQUALIZED DELAY TO TRUE AND COMPLE-
MENT OUTPUTS
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.5V, 10V AND15V PARAMETRIC RATINGS
.INPUT CURRENTOF100nAAT18VAND 25°C
FOR HCC DEVICE
.100 % TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVESTANDARDN°13A,”STANDARDSPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
HCC/H CF 4 041 U B
EY
(Plastic Package)F(Ceramic Frit Seal Package)
M1
(MicroPackage)
ORDER CODES :
HCC4041BF HCF4041BM1
HCF4041BEY HCF4041BC1
(PlasticChipCarrier)
C1
DESCRIPTIO N
The HCC4041UB (extended temperature range)
andHCF4041UB(intermediate temperature range)
are monolithic integrated circuits, available in 14lead dual in-line plastic or ceramic package and
plasticmicro package.
TheHCC/HCF4041UB typesarequadtrue/comple-
ment buffers consisting of n- and p-channel units
having low channel resistance and high current
(sourcing and sinking) capability. The HCC/-
HCF4041UB is intended for use as a buffer, line
driver, orCOS/MOS-to-TTLdriver.Itcanbe used as
an ultra-low power resistor-network driver for A/D
and D/A conversion, as a transmission-line driver,
and inother applications where high noiseimmunity
and low-power dissipation are primary design requirements.
PIN C ONN ECT IONS
June1989
1/12
HCC/HCF4041UB
FUN CTIONAL DIAGR A M
ABSOLUTE MAXIMUM RATIN G S
Symbol Parameter Value Unit
V
* Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
– 0.5 to + 20
– 0.5 to + 18
200
V
V
mW
Dissipation per Output Transistor
for Top= Full Package-temperature Range
T
Operating Temperature :HCC Types
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
100
– 55 t o + 125
–40to+85
mW
°C
°C
RECOMMENDED OPERATING CO NDITIONS
Symbol Parameter Value Unit
V
Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
T
Operating Temperature : HCC Types
op
HCF Types
3to+18
3to+15
DD
– 55 t o + 125
–40to+85
V
V
V
°C
°C
2/12
SCHEM ATIC D I A GRA M
HCC/HCF4041UB
STATIC ELECTRICAL CHARACTERISTICS(over recommended operatingconditions)
Test Conditions Valu e
Symbol Parameter
(V) (V) (µA) (V)
I
L
Quiescent
Current
HCC
Types
0/ 5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
0/ 5 5 4 0.02 4 30
HCF
Types
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
V
OH
Output High
Voltage
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
V
OL
Output Low
Voltage
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
V
IH
Input High
Voltage
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
V
V
I
O
|IO|V
DD
T
* 25°CT
Low
Min. M ax. Min. Typ. Ma x. Min. Max.
0.5/4.5 < 1 5 4 4 4
1/9 < 1 10 8 8 8
1.5/13.5 < 1 15 12.5 12.5 12.5
High
*
Unit
µA
V
V
V
3/12
HCC/HCF4041UB
STATIC ELECTRICAL CHARACTERISTICS(continued)
Test Conditions Valu e
Symbol Parameter
V
IL
Input Low
Voltage
I
OH
Output
Drive
Current
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
I
IH,IIL
Input
leakage
Current
HCC
Types
HCF
Types
C
I
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
Input Capacitance Any Input 15 22.5 pF
= + 125°CforHCC device : + 85°CforHCF device.
V
V
O
|IO|V
I
(V) (V) (µA) (V)
T
DD
* 25°CT
Low
Min. M ax. Min. Typ. Ma x. Min. Max.
4.5/0.5 < 1 5 1 1 1
9/1 < 1 10 2 2 2
13.5/1.5 < 1 15 2.5 2.5 2.5
0/ 5 2.5 5 – 8.4 – 6.4 – 12.8 – 4.6
0/ 5 4.6 5 – 2.1 – 1.6 – 3.2 – 1.2
0/10 9.5 10 – 6.25 – 5 – 10 – 3.5
0/15 13.5 15 – 24 – 19 – 38 – 13
0/ 5 2.5 5 – 6.8 – 5.44 – 12.8 – 4.08
0/ 5 4.6 5 – 1.7 – 1.36 – 3.2 – 1.02
0/10 9.5 10 – 5.31 – 4.25 – 10 – 3.18
0/15 13.5 15 –20.18 –16.15 –38 –12.11
0/ 5 0.4 5 2.1 1.6 3.2 1.2
0/10 0.5 10 6.25 5 10 3.5
0/15 1.5 15 24 19 38 13
0/ 5 0.4 5 1.7 1.36 3.2 1.02
0/10 0.5 10 5.31 4.25 10 3.18
0/15 1.5 15 20.18 16.15 38 12.11
–5
0/18
18 ± 0.1 ±10
± 0.1 ± 1
Any Input
0/15
15 ± 0.3 ±10
–5
± 0.3 ± 1
High
*
Unit
V
mA
µA
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficient for all VDDvalues is 0.3 %/°C,all inputrise and fall times = 20ns)
Symbol Parameter
t
PLH,tPHL
t
THL,tTL H
Propagation Delay Time 5 60 120
Transition Time 5 40 80
4/12
Test Conditions Val ue
V
(V) Min. Typ. Max.
DD
10 35 70
15 25 50
10 20 40
15 15 30
Unit
ns
ns
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