SGS Thomson Microelectronics HCF4030B Datasheet
HCC/HCF4030B
QUAD EXCLUSIVE-OR GATE
.MEDIUM-SPEED OPERATION – t
60ns (typ.)@ CL=50pF and VDD–VSS=10V
PHL=tPLH
.LOW OUTPUT IMPEDANCE : 500Ω (typ.) @
VDD–VSS= 10V
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.5V, 10V, AND 15V PARAMETRIC RATINGS
.INPUT CURRENTOF100nA AT18VAND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVESTANDARDN°13A,”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
=
EY
(Plastic Package)F(CeramicFrit Seal Package)
M1
(MicroPackage)
ORDER CODES :
HCC4030BF HCF4030BM1
HCF4030BEY HCF4030BC1
PIN CONNECTIONS
(PlasticChipCarrier)
C1
DESCRIPTION
The HCC4030B (extendedtemperature range) and
HCF4030B (intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micro package.
The HCC/HCF4030B types consist of four inde-
pendent exclusive-OR gates integrated on a single
monolithic siliconchip. Eachexclusive-OR gate consistsof four n-channel andfour p-channel enhancement-type transistors. All inputs and outputs are
protected against electrostatic effects.
November1996
1/12
HCC/HCF4030B
FUNCTIONALDIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
* Supply Voltage : HCC Types
V
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
DC Input Current (any one input) ± 10 mA
I
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for T
= Full Package-temperature Range
op
T
Operating Temperature : HCC Types
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20
– 0.5 to + 18
200
100
– 55 to + 125
–40to+85
V
V
mW
mW
°C
°C
RECOMMENDED OPERATING CO NDITIONS
Symbol Parameter Value Unit
V
T
Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
3to18
3to15
DD
– 55 to + 125
–40to+85
V
V
V
°C
°C
TRUTH TABLE
One of Four Identical Gates
ABJ
0
1
0
1
Where ”1” = High level
”0” = Low level.
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0
0
1
0
0
1
1
0
HCC/HCF4030B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operatingconditions)
Test Conditions Valu e
Symbol Parameter
I
Quiescent
L
Current
HCC
Types
V
V
O
|IO|V
I
(V) (V) (µA) (V)
T
DD
* 25°CT
Low
Min. Max. Min. Ty p. Max. Min. Max .
High
0/ 5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
0/ 5 5 4 0.02 4 30
HCF
Types
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
V
OH
Output High
Voltage
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
V
OL
Output Low
Voltage
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
V
IH
Input High
Voltage
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
V
IL
Input Low
Voltage
4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
I
OH
Output
Drive
Current
HCC
Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF
Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
I
OL
Output
Sink
Current
HCC
Types
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
HCF
Types
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
I
IH,IIL
*T
*T
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5 V min. with VDD= 15V.
Input
Leakage
Current
Input Capacitance Any Input 5 7.5 pF
C
I
=–55°CforHCC device : – 40°C for HCF device.
Low
= + 125°CforHCC device : + 85°CforHCF device.
High
HCC
Types
HCF
Types
0/18
0/15
Any Input
18
± 0.1 ±10
15 ± 0.3 ±10
–5
± 0.1 ± 1
–5
± 0.3 ± 1
Unit
*
µA
V
V
V
V
mA
mA
µA
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HCC/HCF4030B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficient for all VDD= 0.3%/°C values, all input rise and fall time = 20ns)
Symbol Parameter
t
PLH,tPHL
t
TLH,tTHL
Propagation Delay Time 5 140 280
Transition Time 5 100 200
Test Condit i on s
(V) Min. T yp. Max.
V
CC
10 65 130
15 50 100
10 50 100
15 40 80
Valu e
TypicalOutput Low (sink) Current Characteristics. Minimum Output Low(sink) Current Charac-
teristics.
Unit
ns
ns
TypicalOutput High (source) Current Characteristics.
4/12
Minimum Output High (source)Current Characteristics.
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