SGS Thomson Microelectronics HCF4025B, HCF4002B, HCF4001B, HCF4000B Datasheet
HCC/HCF4000B-4001B
HCC/HCF4002B-4025B
NOR GATE
4000B–DUAL 3 INPUTPLUS INVERTER
4001B–QUAD 2 INPUT
4002B-DUAL 4 INPUT
4025B TRIPLE3 INPUT
.PROPAGATIONDELAY TIME = 60 ns(typ.) AT
CL= 50 pF,VDD=10V
.BUFFERED INPUTS AND OUTPUTS
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.QUIESCENT CURRENT SPECIFIED TO 20 V
FOR HCC DEVICE
.5V, 10V AND 15VPARAMETRIC RATINGS
.INPUT CURRENTOF 100nAAT18VAND25
FOR HCC DEVICE
o
C
.100% TESTED FOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD N. 13A, ” STANDARD
SPECIFICATIONS FOR DESCRIPTION OF B
SERIESCMOS DEVICES ”
DESCRIPTION
The HCC4000B, HCC4001B, HCC4002B and
HCC4025B (extended temperature range) and
HCF4000B, HCF4001B, HCF4002B and
HCF4025B (intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in line plastic or ceramicpackage and plastic
micropackage.
The HCC/HCF4000B, HCC/HCF4001B,HCC/HCF
4002B and HCC/HCF4025B nor gate provide the
system designer with direct implementation of the
nor function and supplement the existing family of
COS/MOS gates. All inputs and outputs are buffered.
EY
(PlasticPackage)
M1
(MicroPackage)
ORDER CODES :
HCCXXX XBF HCFXXXXBM1
HCFXXXXBEY HCFXXXXBC1
(CeramicPackage)
F
C1
(Chip Carrier)
PIN CONNECTIONS
4000 B 4002 B4001 B 4025 B
September 1988
1/13
HCC/H CF4000B-4001B-4002B-4025B
ABSOLU TE MAXIMU M RAT ING
Symbol Parameter Value Unit
V
* Supply Voltage: HCC Types
DD
HCF Types
V
P
Input Voltage -0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for Top = Full Package Temperature Range
T
Operating Temperature: HCC Types
op
HCF Types
T
Stressesabove thoselistedunder”AbsoluteMaximumRatings”maycause permanent damagetothedevice.Thisisastressratingonlyand functional
operation of the device atthese or any otherconditionsabove thoseindicatedin theoperationalsections of thisspecification is not implied.Exposure
to absolute maximum ratingconditions forexternal periods may affect device reliability.
* All voltagevalues are referred to VSSpinvoltage.
Storage Temperature -65 to +150
stg
RECO MM ENDED OPERATIN G C O NDITI ONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage: HCC Types
DD
HCF Types
Input Voltage 0 to V
I
Operating Temperature: HCC Types
op
HCF Types
-0.5 to +20
-0.5 to +18
200
100
-55 to +125
-40 to +85
3to18
3to15
DD
-55 to +125
-40 to +85
V
V
mW
mW
o
C
o
C
o
C
V
V
V
o
C
o
C
2/13
SCHEM ATIC A ND LO GIC D I AG R AMS
HCC/ HCF4000B-4001B-4002B-4025B
4000B
INVERTERAND 1OF 2GATES(NUMBERS INPARANTHESESARE
THERMINALFOR SECONDGATE)
4001B
1 OF 4 GATES (NUMBERS IN PARANTHESES ARE THERMINAL FOR
OTHERGATE)
3/13
HCC/H CF4000B-4001B-4002B-4025B
SCHEM ATIC A ND LO GIC D I AG R AMS (cont inued)
4002B
1 OF2 GATES(NUMBERSIN PARANTHESESARETHERMINALFOR SECOND GATE)
4025B
INVERTERAND 1OF 3GATES(NUMBERS INPARANTHESESARE
THERMINALFOR OTHERGATES)
4/13
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