SGS Thomson Microelectronics HCF4023BM1, HCF4023BF, HCF4023BEY, HCF4023BC1, HCF4012BM1 Datasheet

HCC4011B/12B/23B

HCF4011B/12B/23B

NAND GATES

DESCRIPTION

.PROPAGATIONDELAY TIME = 60ns (typ.) AT

CL= 50pF, VDD= 10V

.BUFFERED INPUTS AND OUTPUTS

.QUIESCENT CURRENT SPECIFIED TO 20V

FOR HCC DEVICE

.INPUT CURRENTOF100nA AT18V AND25°C

FOR HCC DEVICE

.100% TESTEDFOR QUIESCENTCURRENT

.5V, 10V AND 15V PARAMETRIC RATINGS

.MEETSALLREQUIREMENTSOFJEDECTEN-

TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTIONOF ”B”
SERIESCMOS DEVICES”

QUAD 2 INPUT HC C/HCF 4011B
DUAL 4 INPUT HCC/HCF 4012B
TRIPLE 3 INPU T HCC / H CF 4023B

June 1989

The HCC4011B, HCC4012B and HCC4023B (ex-
tended temperature range) and HCF4011B,
HCF4012B and HCF4023B (intermediate tempera­ture range) are monolithic, integrated circuit, avail­able in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.

The HCC/HCF4011B, HCC/HCF4012B and
HCC/HCF4023B NAND gates provide the system
designer with direct implementation of the NAND
function and supplement the existing family of
COS/MOS gates. All inputs and outputs are buf­fered.

PIN CONNECTIONS

EY

(Plastic Package)F(Ceramic Frit Seal Package)

M1

(MicroPackage)C1(PlasticChip Carrier)

ORDER CODES :

HCC40XXBF HCF40XXBM1
HCF40XXBEY HCF40XXBC1

4011B 4012B 4023B

1/12

ABSOLUTE M AXI MU M RATI NGS

Symbol Parameter Val ue Unit

V

DD

* Supply Voltage : HCC Types

HCF Types

– 0.5 to + 20
– 0.5 to + 18

V
V

V

i

Input Voltage – 0.5 to VDD+ 0.5 V

I

I

DC Input Current (any one input) ± 10 mA

P

tot

Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top= Full Package-temperature Range

200
100

mW
mW

T

op

Operating Temperature : HCC Types

HCF Types

–55to+125

–40to+85

°C
°C

T

stg

Storage Temperature – 65 to + 150 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Pa ramet er Valu e Un i t

V

DD

Supply Voltage : HC C Types

HCF Types

3to18
3to15

V
V

V

I

Input Voltage 0 to V

DD

V

T

op

Operating Temperature : HCC Types

HCF Types

–55to+125

–40to+85

°C
°C

Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functionaloperationofthedeviceattheseoranyotherconditionsabove thoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.
Exposure to absolute maximum rating conditions forexternal periodsmay affectdevice reliability.
* Allvoltage values are referred to VSSpinvoltage.

HCC/H FC4011B/12B/23B

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SCHEMATIC AND LOGIC DIAGRAMS

4011B

4023B

4012B

HCC/HCF4011B/12B/23B

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STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)

Test Conditions Valu e

V

I

V

O

|IO|V

DD

T

Low

* 25°CT

High

*

Symbol Parameter

(V) (V) (µA) (V)

Min. Max. Min. Typ. Max. Min. Max.

Unit

I

L

Quiescent
Current

HCC
Types

0/5 5 0.25 0.01 0.25 7.5

µA

0/10 10 0.5 0.01 0.5 15
0/15 15 1 0.01 1 30
0/20 20 5 0.02 5 150

HCF
Types

0/ 5 5 1 0.01 1 7.5
0/10 10 2 0.01 2 15
0/15 15 4 0.01 4 30

V

OH

Output High
Voltage

0/5 < 1 5 4.95 4.95 4.95

V

0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95

V

OL

Output Low
Voltage

5/0 < 1 5 0.05 0.05 0.05

V

10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05

V

IH

Input High
Voltage

0.5/4.5 < 1 5 3.5 3.5 3.5
V

1/9 < 1 10 7 7 7

1.5/13.5 < 1 15 11 11 11

V

IL

Input Low
Voltage

4.5/0.5 < 1 5 1.5 1.5 1.5
V

9/1 < 1 10 3 3 3

13.5/1.5 < 1 15 4 4 4

I

OH

Output
Drive
Current

HCC
Types

0/5 2.5 5 – 2 – 1.6 – 3.2 – 1.15

mA

0/5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4

HCF
Types

0/5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1

0/5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4

I

OL

Output
Sink
Current

HCC
Types

0/5 0.4 5 0.64 0.51 1 0.36

mA

0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4

HCF
Types

0/5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4

I

IH,IIL

Input
Leakage
Current

HCC
Types

0/18

Any Input

18 ± 0.1 ±10–5± 0.1 ± 1

µA

HCF
Types

0/15 15 ± 0.3 ±10

–5

± 0.3 ± 1

C

I

Input Capacitance Any Input 5 7.5 pF

*T

LOW

=–55°Cfor HCC device : – 40°CforHCF device.

*T

HIGH

=+ 125°C forHCC device : + 85°C for HCF device.

TheNoise Margin for both”1” and ”0” level is : 1V min.with VDD=5V, 2V min.with VDD= 10V,2.5V withVDD= 15V.

HCC/H FC4011B/12B/23B

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TEST CIRCUITS

QuiescentDevice Current. Noise Immunity.

Input Leakage Current.

DYNAMIC ELECTRICAL CHARACTERISTICS(T

amb

=25°C, CL= 50pF, RL= 200kΩ,

typical temperature coefficient for all VDDvalues is 0.3%/°C, all input rise and fall times = 20ns)

Val ue

Symbol Parameter

Test Conditions

V

DD

(V) Min. Typ. Max.

Unit

t

PLH,tPHL

Propagation Delay Time 5 125 250

ns

10 60 120
15 45 90

t

THL,tTLH

Transition Time 5 100 200

ns

10 50 100
15 40 80

HCC/HCF4011B/12B/23B

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Minimum Output High (source) Current Charac­teristics.

Minimum Output Low(sink) Current Charac­teristics.

TypicalOutputHigh (source) Current Charac­teristics.

TypicalOutput Low (sink) Current Characteristics.

TypicalPropagation Delay Time per Gate as a
Function of Load Capacitance.

TypicalTransition Time vs. Load Capacitance.

HCC/H FC4011B/12B/23B

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TypicalVoltage Transfer Characteristics. Typical Power Dissipation/gate vs Frequency.

HCC/HCF4011B/12B/23B

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Plastic DIP14 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

P001A

HCC/H FC4011B/12B/23B

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Ceramic DIP14/1 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7.0 0.276
D 3.3 0.130
E 0.38 0.015

e3 15.24 0.600

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 1.52 2.54 0.060 0.100
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

P053C

HCC/HCF4011B/12B/23B

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SO14 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8°(max.)

P013G

HCC/H FC4011B/12B/23B

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PLCC20 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

P027A

HCC/HCF4011B/12B/23B

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized for use ascritical componentsinlife supportdevices orsystemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

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HCC/H FC4011B/12B/23B

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