SGS Thomson Microelectronics HCF40182B Datasheet
LOOK-AHEAD CARRY GENERATOR
.GENERATES HIGH-SPEEDCARRY ACROSS
FOUR ADDERS OFADDER GROUPS
.HIGH-SPEED OPERATIONAL : t
100ns(typ.) @ VDD=10V
PHL=tPLH
.CASCADABLE FOR FAST CARRIES OVER N
BITS
.DESIGNED FOR USE WITHHCC/HCF40181B
ALU
.STANDARDIZED, SYMMETRICAL OUTPUT
CHARACTERISTICS
.QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
.5V, 10V,AND 15VPARAMETRIC RATINGS
.INPUT CURRENT OF 100nA AT18V AND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVESTANDARDN°13A,”STANDARDSPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
HCC/H CF4 01 82B
=
EY
(Plastic Package)F(CeramicFritSeal Package)
M1
(MicroPackage)
ORDER CODES :
HCC40182BFHCF4018
2BM1
(PlasticChip Carrier)
C1
DESCRIPTI ON
The HCC40182B (extended temperature range)
and HCF40182B (intermediate temperature range)
are monolithic integrated circuits, available in 16lead dual in-line plastic or ceramic package and
plastic micro package. The HCC/HCF40182B is a
high-speed look-ahead carry generator capable of
anticipating a carry across four binary adders or
groupsofadders. TheHCC/HCF40182B is cascad-
able toperform full look-ahead acrossn-bit adders.
Carry, propagate-carry, and generate-carry functions are provided as enumerated in the terminal
designation below. The HCC/HCF40182B, when
used in conjunction with the HCC/HCF40181B
arithmetic logic unit (ALU), provides fullhigh-speed
look-ahead carry capability for up to n-bit words.
Each HCC/HCF40182B generatesthe look-ahead
(anticipated carry) across a group of four ALU’s.In
addition, other HCC/HCF40182B’s may be em-
playedtoanticipate the carry across sections of four
look-ahead blocksup ton-bits. Carryinputsand outputs ofthe HCC/HCF40181B are active-high logic,
andcarry-generate(G)andcarry-propagate (P)outputsareactivelow.Thereforetheinputsandoutputs
of the HCC/HCF40182B are compatible. The
HCC/HCF40182B is similar to industry type
MC14582.
PIN CONNECTIONS
June1989
1/12
HCC/HCF40182B
FUN CTIONAL DIAG R A M
TERMINAL DESIGNATIONS TABLE
Pin Name Pin Function
G0,G1, G2,G3 3, 1, 14, 5 Active-low Carry-generate Inputs
P0, P1, P2,P3 4, 2, 15, 6 Active-low Carry-propagate Inputs
C
n
C
n+X,Cn+Y
C
,
n+Z
G 10 Active-low Group Carry-generate Output
P 7 Active-low Group Carry-propagate Output
13 Active-high Carry Input
12, 11, 9 Active-high Carry Outputs
ABSOLUTE M AXI MUM RATIN GS
Symbol Parameter Value Unit
V
* Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for T
T
Operating Temperature : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltages are with respect to VSS(GND).
Storage Temperature – 65 to + 150 °C
stg
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– 0.5 to + 20
– 0.5 to + 18
200
100
– 55 to + 125
–40to+85
V
V
mW
mW
°C
°C
HCC/HCF40182B
RECOMMENDED OPERATING CO NDITIONS
Symbol Parameter Value Unit
V
T
LOGI C DI AG RAM
Supply Voltage : HCC Types
DD
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
HCF Types
LogicEquations :
C
=G0+P0•Cn
n+X
3to18
3to15
DD
– 55 to + 125
–40to+85
V
V
V
°C
°C
C
n+Y
=G1+P1•G0 + P1 • P0 • C
n
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HCC/HCF40182B
STATIC ELECTRICAL CHARACTERISTICS(over recommended operating conditions)
Test Conditions Value
Symbol Parameter
I
Quiescent
L
Current
HCC
Types
HCF
Types
V
OH
Output High
Voltage
V
OL
Output Low
Voltage
V
IH
Input High
Voltage
IL
Input Low
V
Voltage
I
OH
Output
Drive
Current
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
I
IH,IIL
Input
Leakage
Current
HCC
Types
HCF
Types
Input Capacitance Any Input 5 7.5 pF
C
I
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°C for HCC device : + 85°C for HCF device.
High
V
V
I
(V) (V) (µA) (V)
O
|IO|V
DD
T
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
0/ 5 5 5 0.04 5 150
0/10 10 10 0.04 10 300
0/15 15 20 0.04 20 600
0/20 20 100 0.08 100 3000
0/ 5 5 20 0.04 20 150
0/10 10 40 0.04 40 300
0/15 15 80 0.04 80 600
0/ 5 < 1 5 4.95 4.95 5 4.95
0/10 < 1 10 9.95 9.95 10 9.95
0/15 < 1 15 14.95 14.95 15 14.95
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
0/18
18 ± 0.1 ±10
–5
± 0.1 ± 1
Any Input
0/15
15 ± 0.3 ±10
–5
± 0.3 ± 1
High
Unit
*
µA
V
V
V
V
mA
mA
µA
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