SGS Thomson Microelectronics HCF4016B Datasheet

HCC/HCF4016B

QUAD BILATERAL SWITCH

.20V DIGITAL OR ± 10 V PEAK-TO-PEAK

SWITCHING

.280Ω TYPICAL ON RESISTANCE FOR 15V

OPERATION

.SWITCH ON RESISTANCE MATCHED TO

WITHIN 10Ω TYP. OVER 15V SIGNAL INPUT
RANGE

.HIGH ON/OFF OUTPUT-VOLTAGE RATIO :

65dB TYP.@ fis=10kHz, RL= 10kΩ

.HIGH DEGREE OF LINEARITY : < 0.5% DIS-

TORTIONTYP. @ fis= 1KHz, Vis=5Vpp,VDD­VSS≥ 10V, RL=10kΩ

.EXTREMELY LOW OFF SWITCH LEAKAGE

RESULTING IN VERY LOW OFFSET CUR­RENT AND HIGH EFFECTIVE OFF RESIST­ANCE: 100pA TYP. @ VDD-VSS= 18V, T
25°C

amb

.EXTREMELY HIGHCONTROL INPUT IMPED-

ANCE (control circuitisolated from signalcircuit
1012Ω typ.)

.LOW CROSSTALK BETWEEN SWITCHES :

50dB TYP.@ fis= 0.9MHz, RL=1kΩ

.MATCHED CONTROL-INPUT TO SIGNAL-

OUTPUT CAPACITANCE : REDUCES OUT­PUT SIGNAL TRANSIENTS

.FREQUENCY RESPONSE’ SWITCH ON =

40MHz (typ.)

.QUIESCENT CURRENT SPECIFIED TO 20V

FOR HCC DEVICE

.5V, 10V,AND 15VPARAMETRIC RATINGS

.INPUT CURRENTOF100nA AT18VAND25°C

FOR HCC DEVICE

.100% TESTEDFOR QUIESCENTCURRENT

.MEETSALLREQUIREMENTSOFJEDECTEN-

TATIVESTANDARDN°13A,”STANDARD SPE­CIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”

of analog or digital signals. Each of the four inde­pendent bilateral switches has a single control signal
input which simultaneously biases both the p and n
device in a given switchONorOFF.

EY

(Plastic Package)F(Ceramic Frit Seal Package)

=

M1

(MicroPackage)

ORDER CODES :

HCC4016BF HCF4016BM1
HCF4016BEY HCF4016BC1

PIN CON NEC TI O NS

(Plastic Chip Carrier)

C1

DESCRIPTION
TheHCC4016B(extended temperature range) and

HCF4016B (intermediate temperature range) are

monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micropackage.

TheHCC/HCF4016B Series types are quad bilateral
switchesintendedforthetransmission ormultiplexing

June1989

1/15

HCC/HCF4016B

FUNCTIONAL DIAGRAM

ABSOLUTE M AXI MUM RAT I N GS

Symbol Parameter Value Unit

V

* Supply Voltage : HCC Types

DD

HCF Types

V

Input Voltage – 0.5 to VDD+ 0.5 V

i

I

DC Input Current (any one input) ± 10 mA

I

P

Total Power Dissipation (per package)

tot

Dissipation per Output Transistor
for T

T

Operating Temperature : HCC Types

op

= Full Package-temperature Range

op

HCF Types

T

Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec­tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to VSSpin voltage.

Storage Temperature – 65 to + 150 °C

stg

– 0.5 to + 20
– 0.5 to + 18

200
100

– 55 t o + 125

–40to+85

V
V

mW
mW

°C
°C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

T

2/15

Supply Voltage : HCC Types

DD

HCF Types

V

Input Voltage 0 to V

I

Operating Temperature : HCC Types

op

HCF Types

3to18
3to15

DD

– 55 t o + 125

–40to+85

V
V

V

°C
°C

HCC/HCF4016B

SCHEMATIC DIAGRAM

1 OF 4 IDENTICAL SECTION

STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)

Test Conditions Value

V

Symbol Parameter

I

Quiescent

L

Device
Current (all

HCC
Types

C=VSSVDD

V

(V) (V)

DD

switches
on or all
switches
off)

HCF
Types

SWITCH V

R

ON

Resistance

HCC

R

=10kΩ• + 7.5 – 7.5

L

HCF

HCC

R

=10kΩ• +5 –5

L

HCF

*T

=–55°CforHCC device : – 40°CforHCF device.

Low

*T

=+125°C for HCC device : + 85°C for HCF device.

High

T

* 25°CT

Low

High

Min. Max. Min. Typ. Max. Min. Max.

5 0.25 0.01 0.25 7.5
10 0.5 0.01 0.5 15
15 1 0.01 1 30
20 5 0.02 5 150

5 1 0.01 1 7.5
10 2 0.01 2 15
15 4 0.01 4 30

IS

+ 7.5
– 7.5

± 0.25

+ 7.5
– 7.5

± 0.25

+5
–5

±0.25

+5
–5

±0.25

360
360

775

370
370
790

600
600

1870

610
610

1900

200
200
280

200
200
280

250
250
580

250
250
580

400
400
850

400
400
850

660
660

2000

660
660

2000

*

600
600

1230

520
520

1080

960
960

2600

840
840

2380

Unit

µA

Ω

3/15

HCC/HCF4016B

STATIC ELECTRICAL CHARACTERISTICS (continued)

Test Conditions Value

V

Symbol Parameter

SWITCH (continued)

ON

Resistance

R

HCC

=10kΩ•

R

L

HCF

HCC

R

=10kΩ•

L

HCF

∆ON Resistance ∆RON

(between any 2
of 4 switches)

R

L

=10kΩ•

Input or Output
Leakage Current

HCC
Switch OFF
(effective off
resistance)

C

I

C

O

Input Capacitance
Output

HCF

V

CC=VSS

Capacitance

C

CONTRO L (V

V

Feedthrough

IO

Switch Threshold

TH

Voltage I

I

Input

I

Current

)

C

=10µA

IS

HCC
Types

≤ V

V

IS

HCF
Types

C

Input Capacitance 5

I

*T

=–55°CforHCC device : – 40°CforHCF device.

Low

*T

=+125°C for HCC device : + 85°C for HCF device.

High

C=VSSVDD

(V) (V)

V

DD

Min. Max. Min. Typ. Max. Min. Max.

+15

+15 0

+ 0.25

+ 9.3

+15

+15 0

+ 0.25

+ 9.3

+10

+10 0

+ 0.25

+ 5.6

+10

+10 0

+ 0.25

+ 5.6

+ 7.5 – 7.5 ± 7.5 10

+5 –5 ±515

V

V

DD

+18
V

DD

+15

=

C

V

SS

0 ±0.1 10–5± 0.1 1

V

=

C

V

SS

0 ±0.3 10–5± 0.3 1

=–5 +5

5 1 1 2.25 1
10 2 2 4.5 2
15 2 2 6.75 2

18 ± 0.1 ±10–5± 0.1 ± 1

DD

15 ± 0.3 ±10

T

* 25°CT

Low

360
360
775

370
370
790

600
600

1870

610
610

1900

200
200
300

200
200
300

250
250
560

250
250
560

400
400
850

400
400
800

660
660

2000

660
660

2000

4
4

0.2

–5

± 0.3 ± 1

7.5 pF

High

*

600
600

1230

520
520

1080

960
960

2600

840
840

2380

Unit

Ω

Ω

µA

pF

V

µA

4/15

HCC/HCF4016B

DYNAMIC ELECTRICAL CHARACTERISTICS (T

wave rise and fall time = 20ns)

Test Conditions Value

Parameter

(V)

V

C

SWITCH

Propagation Delay Time

t

pd

(signal intput to output)

=V

DD

Crosstalk Between any 2 of 4
Switches (f @ – 50dB)

V

O(B)

20 log 10 = – 50dB

____
V

I(A)

V

C(A)=VDD

V

C(B)=VSS

Frequency Response Switch
”ON” (sine wave input)

At 20 log 10 = – 3dB

Feedtrough (switch OFF)
At 20 log 10 = – 50dB

V

O

____

V

I

V

O

____

V

I

Sine Wave Distortion = V

=V

DD

=+5

=V

SS

=–5

DD

=5

CONTROL (V

)

C

Propagation Delay :

V

(turn on control to
output)

Max. Allowable Control Input
Repetition Rate

Crosstalk (control input to
signal output)

(∆) Symmetrical about OV (•) Forall testconditions.

DD–VSS

(sq. wawe)

10 (sq. wawe) 1 V

10 (sq. wave) 10 GND 10 50 mV

R

L

(kΩ)

(KHz)

10

=+5
=–5

1

1 5p-p – 5 40 MHz

1 – 5p-p 5 1.25 MHz

10 1 5p-p – 5 0.4 %

1

=25°C, CL= 50pF all input square

amb

f

V

V

i

I

(V)

(V)

ss

V

DD

(V)

540100

10sq.

GND

Wave

10 20 50
15 15 40

V

I(A)

∆

= 5p-p

V

DD

or

V

SS

GND 10 10 MHz

DD

5

V

10 20 40

DD–VSS

15 15 30

= 10V

Typ. Max.

Unit

0.9 MHz

35 70

ns

ns

Typical ”ON”Characteristics for 1 of 4 switches with VDD= + 15V, VSS=0V, and Test Circuit.

5/15

HCC/HCF4016B

Typical ”ON”Characteristics for 1 of 4 switcheswithVDD=+ 10V, VSS= 0V, andTest Circuit.

Typical ”ON”Characteristics for 1 of 4 switches with VDD= + 5V, VSS=0V, and Test Circuit.

Typical ”ON”Characteristics for 1 of 4 switches with VDD= + 7.5V, VSS= – 7.5V, andTest Circuit.

6/15

HCC/HCF4016B

Typical ”ON”Characteristics for 1 of 4 switcheswithVDD=+ 5V, VSS= – 5V, and Test Circuit.

Typical ”ON”Characteristics for 1 of 4 switches with VDD= + 2.5V, VSS= – 2.5V, andTest Circuit.

Typical ”ON”Characteristics as function of temp.for1 of 4 switcheswith VDD=+ 5V and Test Circuit.

7/15

HCC/HCF4016B

Typical feedthruvs. frequency-switch”OFF” and Test Circuit.

Typical Crosstalkbetween Switch Circuits in the Same Package.

TypicalSwitch Frequency response-switch ” ON” andTest Circuit.

8/15

HCC/HCF4016B

TYPICAL ”ON” RESISTANCE CHARACTERISTICS, T

Supply

Characte ri st i c*

R

ON

(max) + 15 0 300 + 11 300 + 9.3 320 + 9.2

R

ON

R

ON

R

(max) + 10 0 500 + 7.4 560 + 5.6 610 +5.5

ON

R

ON

(max) + 5 0 1.7k + 4.2 7k + 2.9 33k +2.7

R

ON

R

ON

(max) + 2.5 – 2.5 232k ± 0.25 300k ± 0.25 870k ± 0.25

R

ON

* Variation from a perfect switch, RON=0Ω.

Conditions

V

DD

(V)

V

SS

(V)

+15 0

+10 0

+5 0

+ 2.5 – 2.5

R

=1kΩ RL=10kΩ RL= 100 kΩ

L

Valu e

(Ω)

V

(V)

is

200 + 15 200 + 15 180 + 15
200020002000

290 + 10 250 + 10 240 + 10
290025003000

860+5470+5450+5
600058008000

590 + 2.5 450 + 2.5 490 + 2.5
720 – 2.5 520 – 2.5 520 – 2.5

=25°C

amb

Load Conditions

Value

(Ω)

V

(V)

is

Value

(Ω)

TEST CIRCUITS

”OFF” SwitchInputor Put Leakage Current.

Square-Wave Response.

V

(V)

is

9/15

HCC/HCF4016B

TEST CIRCUITS (continued)

Crosstalk-control Input to Signal Output. Propagaton DelayTime Signal Input (VIS) to Sig-

nal Output (VOS).

Max Allowable Control-input Repetition Rate. Switch Treshold Voltage.

Capacitance C

10/15

andCOS.

IOS

Turn-OnPropagation Delay-control Inputto Out­put.

Plastic DIP14 MECHANICAL DATA

HCC/HCF4016B

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

mm inch

P001A

11/15

HCC/HCF4016B

Ceramic DIP14/1 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7.0 0.276
D 3.3 0.130
E 0.38 0.015

e3 15.24 0.600

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 1.52 2.54 0.060 0.100
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

mm inch

12/15

P053C

SO14 MECHANICAL DATA

HCC/HCF4016B

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8°(max.)

mm inch

P013G

13/15

HCC/HCF4016B

PLCC20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

14/15

P027A

HCC/HCF4016B

Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents orother rights of third parties which may results from its use. No
license isgrantedby implication or otherwiseunder any patent orpatentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publication are subject to changewithout notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin life supportdevices orsystemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia-Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A

SGS-THOMSON MicroelectronicsGROUPOF COMPANIES

15/15