SGS Thomson Microelectronics HCF4013B Datasheet
.SET-RESET CAPABILITY
.STATIC FLIP-FLOP OPERATION - RETAINS
STATE INDEFINITELY WITH CLOCK LEVEL
EITHER”HIGH” OR ”LOW”
.MEDIUM-SPEED OPERATION - 16MHz (typ.)
CLOCKTOGGLE RATE AT 10V
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.5V, 10V,AND 15VPARAMETRIC RATINGS
.INPUT CURRENTOF100nA AT18VAND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTIONOF ”B”
SERIESCMOS DEVICES”
HCC/HCF4013B
DUAL ’D’ – TYPE FLIP–FLOP
EY
(Plastic Package)
M1
(MicroPackage)
HCC4013BF HCF4013BM1
HCF4013BEY HCF4013BC1
(CeramicFritSeal Package)
ORDERCODES :
(Plastic Chip Carrier)
F
C1
DESCRIPTION
TheHCC4013B (extended temperaturerange)and
HCF4013B (intermediate temperature range) are
monolithic integrated circuits, available in 14-lead
dual in-line plastic or ceramic package and plastic
micropackage.
TheHCC/HCF4013B consistsoftwoidentical, inde-
pendent data-type flip-flops.Each flip-flophasindependent data,set,reset,andclockinputsandQand
Qoutputs. These devicescan beusedfor shift registerapplications, and,byconnecting Qoutputtothe
data input,for counterand toggle applications. The
logic levelpresent at theDinputis transferred tothe
Q output during the positive-going transition of the
clock pulse. Setting or resetting is independent of
the clockandisaccomplishedby a high level on the
set or reset line, respectively.
PIN CON NEC TI O NS
June1989
1/11
HCC/HFC4013B
ABSOLUTE M AXI MUM RATINGS
Symbol Parameter Value Unit
V
* Supply Voltage :HCC Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for T
T
Operating Temperature :HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltages are with respect to VSS(GND).
Storasge Temperature – 65 to + 150 °C
stg
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
Supply Voltage :HCC Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature :HCC Types
op
HCF Types
– 0.5 to + 20
– 0.5 to + 18
200
100
– 55 to + 125
–40to+85
3to18
3to15
DD
– 55 to + 125
–40to+85
V
V
mW
mW
°C
°C
V
V
V
°C
°C
LOGIC DIAGRAM AND TRUTH TABLE (one of t wo identical flip–flops)
CL∆DRSQQ
–
/
00001
–
–
/
10010
–
–
\
X00QQ
–
XX1001
XX0110
XX1111
LOGIC 0 = LOW ∆ = LOW LEVEL
LOGIC 1 = HIGH X = DON’T CARE
NO CHANGE
N(N) = FF1/FF2 TERMINAL
ASSIGNEMENT
2/11
HCC/HCF4013B
STATIC ELECTRICAL CHARACTERISTICS(over recommended operatingconditions)
Test Conditions Value
Symbol Parameter
Quiescent
I
L
Current
HCC
Types
HCF
Types
V
OH
Output High
Voltage
V
OL
Output Low
Voltage
V
IH
Input High
Voltage
IL
Input Low
V
Voltage
I
OH
Output
Drive
Current
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
I
IH,IIL
Input
Leakage
Current
HCC
Types
HCF
Types
C
Input Capacitance Any Input 5 7.5 pF
I
*T
=–55°C for HCC device : – 40°C for HCF device.
Low
*T
=+125°C for HCC device : + 85°C for HCF device.
High
TheNoise Margin for both ”1” and ”0” levelis: 1Vmin. withVDD= 5V,2V min. with VDD= 10V,2.5 V min. with VDD=15V.
V
V
O
|IO|V
I
(V) (V) (µA) (V)
DD
T
* 25°CT
Low
Min. Max. Min . Typ. Max. Min. Max.
0/5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
0/5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
0/5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
0/5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
0/5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
0/18
Any Input
0/15 15 ± 0.3 ±10
18 ± 0.1 ±10–5± 0.1 ± 1
–5
± 0.3 ± 1
High
Unit
*
µA
V
V
V
V
mA
mA
µA
3/11
HCC/HFC4013B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficientfor all VDD= 0.3%/°C values,all input rise and fall time = 20ns)
Symbol Paramete r
t
PLH,tPHL
Propagation Delay Time
(clock to Q or Q outputs)
Test Conditions
V
(V) Min. Typ. Max.
DD
5150300
10 65 130
15 45 90
t
PLH
Propagation Delay Time
(set to Q or reset to Q)
5150300
10 65 130
15 45 90
t
PHL
Propagation Delay Time
(set to Q or reset to Q)
5200400
10 85 170
15 60 120
t
THL,tTLH
Transition Time 5 100 200
10 50 100
15 40 80
f
* Maximum Clock Input Frequency 5 3.5 7
CL
10 8 16
15 12 24
t
Cock Pulse Width 5 140 70
W
10 60 30
15 40 20
t
** Clock Input Rise or Fall Time 5 15
r,tf
10 4
15 1
t
Set or Reset Pulse Width 5 180 90
W
10 80 40
15 50 25
t
se tu p
Data Setup Time 5 40 20
10 20 10
15 15 7
Value
Unit
ns
ns
ns
ns
MHz
ns
µs
ns
ns
*
Inputtr,tf=5ns.
** If more than unit is cascaded in a parallel clocked application, t
propagation delay time at 15pF and the transition time of the carry output driving stage for the estimated capacitive load.
should be made less than or equal to the sum of the fixed
r
4/11
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