SGS Thomson Microelectronics HCF4010B, HCF4009UB Datasheet
HCC/HCF4009UB
HCC/HCF4010B
HEX BUFFER/CONVERTERS
4009UB–INVERTING TYPE
4010B–NON INVERTING TYPE
.CMOS TO DTL/TTLHEXCONVERTER
.HIGH-TO-LOWLEVEL LOGIC CONVERSION
.MULTIPLEXER: 1-TO-6 OR 6-TO-1
.HIGH”SINK” AND ”SOURCE” CURRENT CA-
PABILITY
.5V, 10V AND 15V PARAMETRIC RATINGS
.MAXIMUM INPUT CURRENT OF 100 µAAT
18V OVER FULL
.PACKAGE AND TEMPERATURE RANGE;
100nA AT 18V AND 25oC
.100% TESTED FOR QUIESCENT CURRENT
AT 20V
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD N. 13A, ” STANDARD
SPECIFICATIONSFOR DESCRIPTION OF B
SERIESCMOS DEVICES ”
DESCRIPTION
The HCC4009UB/4010B (extended temperature
range) and the HCF4009UB/4010B (intermediate
temperature range) are monolithic integrated circuits available in 16-lead dual in line plastic or ceramic packagesand plasticmicropackage.
The HCC/HCF4009UB/4010B are inverting and
non-inverting Hex Buffer/Converters, respectively.
Both devicescan be used asCMOS toTTL or DTL
logic-level converters, as current ”sink” or ”source”
driversor as multiplexer (1to 6).
4049UB and 4050B are prefered replacements for
4009UB and4010B, respectively, in bufferapplica-
tions.
EY
(PlasticPackage)
M1
(MicroPackage)
ORDER CODES :
HCCXXX XBF HCFXXXXBM1
HCFXXXXBEY HCFXXXXBC1
(CeramicPackage)
F
C1
(Chip Carrier)
PIN CONNECTIONS
September 1988
4009UB 4010B
1/13
HCC/HCF4009UB HCC/HCF4010B
SCHEM ATIC DI A GRA M: C OS/ MOS TO DTL OR TTL CONVERT ER (1 of 6 id entical u ni ts)
4009UB 4010B
ConnectVCCtoDTLorTTLsupply andVDDtoCOS/MOS supply
ABSOLU TE MAXIMU M RATING
Symbol Parameter Value Unit
* Supply Voltage: HCC Types
V
DD
HCF Types
V
P
Input Voltage -0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
Total Power Dissipation (per package)
tot
-0.5 to +20
-0.5 to +18
200
V
V
mW
Dissipation per Output Transistor
for Top = Full Package Temperature Range
T
Operating Temperature: HCC Types
op
HCF Types
T
Stressesabove thoselistedunder ”Absolute Maximum Ratings”maycausepermanent damage tothedevice. Thisisastressratingonlyand functional
operation of the device atthese or anyother conditions above thoseindicated in theoperational sections of thisspecification isnotimplied. Exposure
to absolute maximum ratingconditionsforexternal periods may affectdevice reliability.
* All voltagevalues are referred to VSSpinvoltage.
Storage Temperature -65 to +150
stg
100
-55 to +125
-40 to +85
mW
o
C
o
C
o
C
RECO MM ENDED O PERAT IN G C ONDITIO NS
Symbol Parameter Value Unit
V
Supply Voltage: HCC Types
DD
HCF Types
V
T
Input Voltage 0 to V
I
Operating Temperature: HCC Types
op
HCF Types
3to18
3to15
DD
-55 to +125
-40 to +85
V
V
V
o
C
o
C
2/13
HCC/H CF4009UB HCC/HC F 4010B
STATI C ELECTRIC AL CHAR ACTER I STI CS (over recomm end ed opera t ing co nditions)
Test Conditios Value
Symbol Parameter
I
Quiescent
L
Current
HCC
Types
V
(V)
V
I
(V)
|IO|
(µA)
V
(V)
O
T
DD
*25
LOW
Min. Max. Min. Typ. Max. Min. Max.
0/5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
o
CT
0/20 20 20 0.04 20 600
HCF
Types
0/5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
OH
Output High
V
Voltage
0/5 5 4.95 4.95 4.95
0/10 10 9.95 9.95 9.95
0/15 15 14.95 14.95 14.95
V
OL
Output Low
Voltage
5/0 5 0.05 0.05 0.05
10/0 10 0.05 0.05 0.05
15/0 15 0.05 0.05 0.05
V
Input High
IH
Voltage (4009UB)
0.5 5 4 4 4
11088 8
1.5 15 12.5 12.5 12.5
V
Input High
IH
Voltage (4010B)
4.5 5 3.5 3.5 3.5
91077 7
13.5 15 11 11 11
V
Input Low
IL
Voltage (4009UB)
4.5 5 1 1 1
9102 22
13.5 15 2.5 2.5 2.5
V
Input Low
IL
Voltage (4010B)
0.5 5 1.5 1.5 1.5
1103 33
1.5 15 4 4 4
OH
Output
Drive
Current
HCC
Types
I
0/5 2.5 5 -1 -0.8 -1.6 -0.58
0/5 4.6 5 -0.25 -0.2 -0.4 -0.15
0/10 9.5 10 -0.55 -0.45 -0.9 -0.33
0/15 13.5 15 -1.65 -1.5 -3 -1.1
0/5 2.5 5 -0.9 -0.8 -1.6 -0.65
HCF
Types
0/5 4.6 5 -0.23 -0.2 -0.4 -0.18
0/10 9.5 10 -0.5 -0.45 -0.9 -0.38
0/15 13.5 15 -1.6 -1.5 -3 -1.25
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
0/5 0.4 5 3.75 3 4 2.1
0/10 0.5 10 10 8 10 5.6
0/15 1.5 15 30 24 36 16
0/5 0.4 5 3.6 3 4 2.4
0/10 0.5 10 0.96 8 10 6.4
0/15 1.5 15 40 24 36 1.9
I
IH,IIL
C
*T
LOW
*T
HIGH
TheNoiseMarginfor both ”1” and ”0” level is: 1V min. withVDD=5V,2 V min.withVDD=10V,2.5 V min. withVDD=15V
Input Leakage
Current
Input
I
Capacitance
=-55oCforHCCdevice: -40oC for HCF device.
=+125oCforHCC device:+85oC for HCF device.
4009UB Any Input 15 22.6
4010B 5 7.5 pF
0/18 18 ±0.1 ±10
-5
±0.1 ±1 µA
HIGH
Unit
*
µA
V
V
V
V
V
V
mA
mA
3/13
HCC/HCF4009UB HCC/HCF4010B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25oC, CL=50pF,RL= 200 KΩ,
amb
typic al temperat ur e coeffic ent for all VDDvalues is 03 %/oC, all input ris e and fall times= 20 ns)
Symbol Parameter
t
PLH
Propagation Delay Time
(4009UB)
t
PLH
Propagation Delay Time
(4010B)
t
PHL
Propagation Delay Time
(4009UB)
t
PHL
Propagation Delay Time
(4010B)
t
t
TLH
THL
Transition Time 5 5 5 150 350
Transition Time 5 5 5 35 70
Test Conditions Value
(V) VI(V) VCC(V) Min. Typ. Max.
V
DD
5 5 5 70 140
10 10 10 40 80
10 10 5 35 70
15 15 15 30 60
15 15 5 30 60
5 5 5 100 200
10 10 10 50 100
10 10 5 50 100
15 15 15 35 70
15 15 5 35 70
555 3060
10 10 10 20 40
10 10 5 15 30
15 15 15 15 30
15 15 5 10 20
5 5 5 65 130
10 10 10 35 70
10 10 5 30 70
15 15 15 25 50
15 15 5 20 40
10 10 10 75 150
15 15 15 55 110
10 10 10 20 40
15 15 15 15 30
Unit
ns
ns
ns
ns
ns
ns
Minimum and Maximum Voltage Transfer Characteristics for 4009UB
4/13
Typical Voltage Transfer Characteristics As a
Function of Temperature for 4009UB
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