SGS Thomson Microelectronics HCF40107B Datasheet
DUAL 2-INPUTNAND BUFFER/DRIVER
.32 TIMES STANDARD B-SERIES OUTPUT
CURRENTDRIVE SINKING CAPABILITY
– 136mATYP. @ VDD= 10V, VDS=1V
.QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
.5V, 10V, AND 15V PARAMETRIC RATINGS
.INPUT CURRENTOF100nA AT 18V AND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD N°. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
HCC/H CF4 01 07B
EY
(Plastic Package)F(Ceramic Frit Seal Package)
M1
(MicroPackage)
ORDER CO DES
HCC40107BF HCF40107BM1
HCF40107BEY HCF40107BC1
(Plastic Chip Carrier)
C1
DESCRIPTION
The HCC40107B (extended temperature range)
andHCF40107B (intermediate temperature range)
are monolithic integrated circuits, available in 14lead dual in-line ceramic package 8-lead minidip
plastic package and 8-lead plastic micropackage.
The HCC/HCF40107B is a dual 2-input NANDbuf-
fer/driver containing twoindependent 2-inputNAND
buffers with open-drain single n-channel transistor
outputs. This device features a wired-OR capability
and high output sink current capability (136mA typ.
at VDD=10V, VDS= 1V).
PIN CONNECTIONS
September 1988
1/14
HCC/HCF40107B
FUN CTIONAL DIAG R A M
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
Supply Voltage : HCC types
*
DD
Input Voltage – 0.5 to VDD + 0.5 V
V
i
DC Input Current (any one input) ± 10 mA
I
I
HCF types
Total Power Dissipation (per package)
P
Dissipation per Output Transistor
tot
for T
= full package-temperature Range
op
Operating Temperature : HCC types
T
op
Storage Temperature – 65 to + 150 °C
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltages values are referred to VSSpin voltage.
HCF types
– 0.5 to + 20
– 0.5 to + 18
200
100
– 55 to + 125
–40to+85
V
mW
°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
2/14
Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperatu re : HCC Types
op
HCF Types
3to18
3to15
DD
– 55 to + 125
–40to+85
V
V
V
°C
°C
HCC/HCF40107B
SCHEMATIC DIAGRAM AND TRUTH TABLE
AB C
0 0 1* Z
1 0 1* Z
0 1 1* Z
110
* Requires externaland pull-up resis-
)toVDD.
tor (R
L
# Without pull-up resistor(3-state).
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Valu e
Symbol Parameter
Quiescent
I
L
Current
HCC
Types
HCF
Types
V
** Input High
IH
Voltage
V
** Input Low
IL
Voltage
*T
=–55°C for HCC device ; – 40°C for HCF device.
Low
*T
= + 125°C for HCC device ; + 85°C for HCF device.
High
The Noise Margin, full package temperature range, RLto VDD=10kΩ: 1V min withVDD= 5V,2V minwith VDD= 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, RL= 10kΩ to VDD.
*** Forced output disabled.
V
V
O
|IO|V
I
(V) (V) (µA) (V)
T
DD
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
High
0/ 5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
0/ 5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
4.5 < 1 5 1.5 1.5 1.5
9<110 3 3 3
13.5 < 1 15 4 4 4
#
#
#
Unit
*
µA
V
V
3/14
HCC/HCF40107B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions Value
Symbol Parame ter
I
OL
Output
Sink
Current HCC
Types
V
V
O
|IO|V
I
(V) (V) (µA) (V)
T
DD
* 25°CT
Low
Min. Max. Min. Typ. M ax. Min. Max.
High
5 0.4 5 21 16 32 12
51 544 3068 25
10 0.5 10 49 37 74 28
10 1 10 89 68 136 51
15 0.5 15 66 50 100 38
5 0.4 5 17 13.6 32 12
HCF
Types
5 1 5 35.7 25.5 68 22
10 0.5 10 39.1 31.4 74 27
10 1 10 72.2 57.8 136 51
15 0.5 15 53.5 42.5 100 37
I
I
IH,IIL
I
OH,IOL
***
C
*T
*T
The Noise Margin, full package temperature range, RLto VDD=10kΩ: 1V min with VDD= 5V, 2V min withVDD= 10V, 2.5V min withVDD = 15V.
** Measured with external pull-up resistor, RL= 10kΩ to VDD.
*** Forced output disabled.
Output Drive
OH
Current
Input
Leakage
Current
3-State
Output
Leakage
Current
C
Input Capacitance Any Input 5 7.5 pF
I
Output
O
Capacitance
=–55°C for HCC device ; – 40°C for HCF device.
Low
= + 125°C for HCC device ; + 85°C for HCF device.
High
HCC
Types
HCF
Types
HCC
Types
HCF
Types
0/18
Any Input
0/15
0/18 18 18 2 ±10
0/15 15 15 2 ±10
Any Output 30 pF
No Internal Pull-up Device mA
–5
18 ± 0.1 ±10
15 ± 0.3 ±10
± 0.1 ± 1
–5
± 0.3 ± 1
–4
220
–4
220
*
Unit
mA
µA
µA
4/14
HCC/HCF40107B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, typical temperature
amb
coefficient forall VDDvalues is 0.3%/°C, all inputrise and fall time = 20ns)
Symbol Paramet e r
t
,
PHL
t
PL H
Propagation Delay Time
High to Low
Low to High R
t
,
THL
t
TL H
Transition Time
High to Low
Low to High R
*RLis external pull-up resistor to VDD.
Test Conditions
(V) Min. Typ. Max.
V
DD
RL* = 120Ω 5 100 200
10 45 90
15 30 60
* = 120Ω 5 100 200
L
10 60 120
15 50 100
RL* = 120Ω 5 50 100
10 20 40
15 10 20
* = 120Ω 5 50 100
L
10 35 70
15 25 50
Value
Unit
ns
ns
ns
ns
OutputLow (sink) Current Characteristics. TypicalPropagation DelayTime vs. Load Capacit-
ance.
5/14
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