SGS Thomson Microelectronics HCF40106BM1, HCF40106BEY, HCF40106BC1, HCC40106BF Datasheet
.SCHMITT-TRIGGER ACTION WITH NO EX-
TERNALCOMPONENTS
.HYSTERESIS VOLTAGE(TYP.) 0.9VAT V
5V, 2.3VATVDD=10VAND3.5V AT VDD=15V
DD
.NOISEIMMUNITY GREATER THAN 50%
.NO LIMIT ON INPUTRISEAND FALL TIME
.LOW V
INPUTRAMP
TO VSSCURRENT DURING SLOW
DD
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
.5V, 10V, AND 15V PARAMETRIC RATINGS
.INPUT CURRENTOF100nA AT18V AND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETS ALL REQUIREMENTS OF JEDEC
TENTATIVE STANDARD N°13A, ”STANDARD
SPECIFICATIONSFOR DESCRIPTIONOF ”B”
SERIESCMOS DEVICES”
HCC40106B
HCF 401 06 B
HEX SCHMITT TRIGGERS
=
EY
(Plastic Package)F(Ceramic Frit Seal Package)
M1
(MicroPackage)
ORDERCODES :
HCC40106BF HCF40106BM1
HCF40106BEY HCF40106BC1
(PlasticChipCarrier)
C1
DESCRIPTION
The HCC40106B (extended temperature range)
and HCF40106B (intermediate temperature range)
are monolithic integrated circuits, available in 14lead dual in-line plastic or ceramic package and
plasticmicropackage.
The HCC/HCF40106B consists of six Schmitt-trig-
gercircuits.Eachcircuitfunctionsasaninverterwith
Schmitt-trigger actionon the input. The trigger switches at different points for positive and negativegoing signals. The difference between the
positive-going voltage (VP) and the negative-going
voltage (VN)is defined as hysteresis voltage (VH).
PIN CONNECTIONS
June1989
1/13
HCC/HCF40106B
FUNCTIONAL DIAGRAM
ABSOLUTE M AX IMU M RATINGS
Symbol Parameter Val ue Unit
V
* Supply Voltage : HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
DC Input Current (any one input) ± 10 mA
I
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for T
T
Operating Temperature : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20
– 0.5 to + 18
200
100
–55to+125
–40to+85
V
V
mW
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
2/13
Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature :HCC Types
op
HCF Types
3to18
3to15
DD
– 55 to + 125
–40to+85
V
V
V
°C
°C
HCC/HCF40106B
LOGIC DIAGRAM
STATIC ELECTRICAL CHARACTERISTICS (over recommended operatingconditions)
Test Conditions Value
V
V
Symbol Parameter
I
(V) (V) (µA) (V)
I
L
Quiescent
Current
HCC
Types
0/ 5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
HCF
Types
0/ 5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
OH
Output High
V
Voltage
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
V
OL
Output Low
Voltage
5/10 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
V
Positive Trigger
P
Threshold
Voltage
V
Negative Trigger
N
Threshold
Voltage
V
H
Hysteresis
Voltage
*T
=–55°C for HCC device : – 40°C for HCF device.
Low
*T
= + 125°C for HCC device : + 85°C for HCF device.
High
O
|IO|V
5 2.2 3.6 2.2 2.9 3.6 2.2 3.6
10 4.6 7.1 4.6 5.9 7.1 4.6 7.1
15 6.8 10.8 6.8 8.8 10.8 6.8 10.8
5 0.9 2.8 0.9 1.9 2.8 0.9 2.8
10 2.5 5.2 2.5 3.9 5.2 2.5 5.2
15 4 7.4 4 5.8 7.4 4 7.4
5 0.3 1.6 0.3 0.9 1.6 0.3 1.6
10 1.2 3.4 1.2 2.3 3.4 1.2 3.4
15 1.6 5 1.6 3.5 5 1.6
T
DD
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
High
*
Unit
µA
V
V
V
V
V
3/13
HCC/HCF40106B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions Value
V
V
Symbol Parameter
I
(V) (V) (µA) (V)
I
OH
Output
Drive
Current
HCC
Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF
Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
I
OL
Output Sink
Current
HCC
Types
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.6 15 4.2 3.4 6.8 2.4
HCF
Types
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.9
I
** Input
IH,IIL
Leakage
Current
C
Input Capacitance Any Input 5 7.5 p
I
*T
=–55°CforHCC device : – 40°C for HCF device.
Low
*T
=+125°CforHCC device : + 85°CforHCF device.
High
HCC
Types
HCF
Types
0/18
0/15
O
Any Input
|IO|V
18 ± 0.1 ±10
15 ± 0.3 ±10
T
DD
Low
Min. Max. Min. Typ. Max. Min. Max.
* 25°CT
–5
± 0.1 ± 1
–5
± 0.3 ± 1
High
*
Unit
mA
mA
µA
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficient for all VDDvalues is 0.3%/°C, all input riseand fall time = 20ns)
Symbol Parameter
,
t
t
t
t
PL H
PHL
THL
TLH
Propagation Delay Time 5 140 280
,
Transition Time 5 100 200
4/13
Test Conditions Value
V
(V) Min. Typ. Max.
DD
10 70 140
15 60 120
10 50 100
15 40 80
Unit
ns
ns
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