SGS Thomson Microelectronics HCF40106BM1, HCF40106BEY, HCF40106BC1, HCC40106BF Datasheet

.SCHMITT-TRIGGER ACTION WITH NO EX-
TERNALCOMPONENTS
.HYSTERESIS VOLTAGE(TYP.) 0.9VAT V
5V, 2.3VATVDD=10VAND3.5V AT VDD=15V
DD
.NOISEIMMUNITY GREATER THAN 50%
.NO LIMIT ON INPUTRISEAND FALL TIME
.LOW V
INPUTRAMP
TO VSSCURRENT DURING SLOW
DD
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
.5V, 10V, AND 15V PARAMETRIC RATINGS
.INPUT CURRENTOF100nA AT18V AND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETS ALL REQUIREMENTS OF JEDEC
TENTATIVE STANDARD N°13A, ”STANDARD SPECIFICATIONSFOR DESCRIPTIONOF ”B” SERIESCMOS DEVICES”
HCC40106B
HCF 401 06 B
HEX SCHMITT TRIGGERS
=
EY
(Plastic Package)F(Ceramic Frit Seal Package)
M1
(MicroPackage)
ORDERCODES :
HCC40106BF HCF40106BM1 HCF40106BEY HCF40106BC1
(PlasticChipCarrier)
C1
DESCRIPTION
The HCC40106B (extended temperature range) and HCF40106B (intermediate temperature range) are monolithic integrated circuits, available in 14­lead dual in-line plastic or ceramic package and plasticmicropackage.
The HCC/HCF40106B consists of six Schmitt-trig- gercircuits.Eachcircuitfunctionsasaninverterwith Schmitt-trigger actionon the input. The trigger swit­ches at different points for positive and negative­going signals. The difference between the positive-going voltage (VP) and the negative-going voltage (VN)is defined as hysteresis voltage (VH).
PIN CONNECTIONS
June1989
1/13
HCC/HCF40106B
FUNCTIONAL DIAGRAM
ABSOLUTE M AX IMU M RATINGS
Symbol Parameter Val ue Unit
V
* Supply Voltage : HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
DC Input Current (any one input) ± 10 mA
I
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor for T
T
Operating Temperature : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20 – 0.5 to + 18
200 100
–55to+125
–40to+85
V V
mW mW
°C °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
2/13
Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature :HCC Types
op
HCF Types
3to18 3to15
DD
– 55 to + 125
–40to+85
V V
V
°C °C
HCC/HCF40106B
LOGIC DIAGRAM
STATIC ELECTRICAL CHARACTERISTICS (over recommended operatingconditions)
Test Conditions Value
V
V
Symbol Parameter
I
(V) (V) (µA) (V)
I
L
Quiescent Current
HCC Types
0/ 5 5 1 0.02 1 30 0/10 10 2 0.02 2 60 0/15 15 4 0.02 4 120 0/20 20 20 0.04 20 600
HCF Types
0/ 5 5 4 0.02 4 30 0/10 10 8 0.02 8 60 0/15 15 16 0.02 16 120
OH
Output High
V
Voltage
0/ 5 < 1 5 4.95 4.95 4.95 0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95
V
OL
Output Low Voltage
5/10 < 1 5 0.05 0.05 0.05 10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05
V
Positive Trigger
P
Threshold Voltage
V
Negative Trigger
N
Threshold Voltage
V
H
Hysteresis Voltage
*T
=–55°C for HCC device : – 40°C for HCF device.
Low
*T
= + 125°C for HCC device : + 85°C for HCF device.
High
O
|IO|V
5 2.2 3.6 2.2 2.9 3.6 2.2 3.6 10 4.6 7.1 4.6 5.9 7.1 4.6 7.1 15 6.8 10.8 6.8 8.8 10.8 6.8 10.8
5 0.9 2.8 0.9 1.9 2.8 0.9 2.8 10 2.5 5.2 2.5 3.9 5.2 2.5 5.2 15 4 7.4 4 5.8 7.4 4 7.4
5 0.3 1.6 0.3 0.9 1.6 0.3 1.6 10 1.2 3.4 1.2 2.3 3.4 1.2 3.4 15 1.6 5 1.6 3.5 5 1.6
T
DD
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
High
*
Unit
µA
V
V
V
V
V
3/13
HCC/HCF40106B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions Value
V
V
Symbol Parameter
I
(V) (V) (µA) (V)
I
OH
Output Drive Current
HCC Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15 0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36 0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9 0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4 0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36 0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9 0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
I
OL
Output Sink Current
HCC Types
0/ 5 0.4 5 0.64 0.51 1 0.36 0/10 0.5 10 1.6 1.3 2.6 0.9 0/15 1.6 15 4.2 3.4 6.8 2.4
HCF Types
0/ 5 0.4 5 0.52 0.44 1 0.36 0/10 0.5 10 1.3 1.1 2.6 0.9 0/15 1.5 15 3.6 3.0 6.8 2.9
I
** Input
IH,IIL
Leakage Current
C
Input Capacitance Any Input 5 7.5 p
I
*T
=–55°CforHCC device : – 40°C for HCF device.
Low
*T
=+125°CforHCC device : + 85°CforHCF device.
High
HCC Types
HCF
Types
0/18
0/15
O
Any Input
|IO|V
18 ± 0.1 ±10
15 ± 0.3 ±10
T
DD
Low
Min. Max. Min. Typ. Max. Min. Max.
* 25°CT
–5
± 0.1 ± 1
–5
± 0.3 ± 1
High
*
Unit
mA
mA
µA
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200k,
amb
typical temperature coefficient for all VDDvalues is 0.3%/°C, all input riseand fall time = 20ns)
Symbol Parameter
,
t
t
t
t
PL H
PHL
THL
TLH
Propagation Delay Time 5 140 280
,
Transition Time 5 100 200
4/13
Test Conditions Value
V
(V) Min. Typ. Max.
DD
10 70 140 15 60 120
10 50 100 15 40 80
Unit
ns
ns
HCC/HCF40106B
HYSTERESIS DEFINITION,CHARACTERISTICSAND TEST SETUP
(a) Definitionof VP,VNandVH. (b) Transfer Characteristic of 1 of 6 gates.
(c) Test Setup. Input and Output Characteristics.
TypicalCurrent Voltage Transfer Characteristics, and Test Circuit.
5/13
HCC/HCF40106B
HYSTERESIS DEFINITION,CHARACTERISTICSAND TEST SETUP
TypicalVoltage Transfer Characteristics vs.Temperature, and Test Circuit.
TypicalTransition Time vs. Load Capacitance. Output Low (sink) Current Characteristics.
Output High (source) Current Characteristics. Typical Propagation DelayTime vs. Load Capacit-
ance.
6/13
HCC/HCF40106B
Typical Trigger Threshold Voltagevs. Supply Voltage.
Typical Power Dissipation per Trigger vs. Input Frequency.
Typicalper Cent Hysteresisvs. Supply Voltage.
Typical Power Dissipationper Triggervs. Input Frequency.
TYPICAL APPLICATIONS
ASTABLE MULTIVIBRATOR. MONOSTABLE MULTIVIBRATOR.
7/13
HCC/HCF40106B
TYPICAL APPLICATIONS (continued)
WAVE SHAPER.
TEST CIRCUITS
Quiescent Device Current. DynamicPowerDissipation.
InputCurrent .
8/13
Plastic DIP14 MECHANICALDATA
HCC/HCF40106B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
mm inch
P001A
9/13
HCC/HCF40106B
Ceramic DIP14/1 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015
e3 15.24 0.600
F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012
M 1.52 2.54 0.060 0.100
N 10.3 0.406
P 7.8 8.05 0.307 0.317 Q 5.08 0.200
mm inch
10/13
P053C
SO14 MECHANICAL DATA
HCC/HCF40106B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8°(max.)
mm inch
P013G
11/13
HCC/HCF40106B
PLCC20 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180
d1 2.54 0.100 d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015 G 0.101 0.004
M 1.27 0.050
M1 1.14 0.045
mm inch
12/13
P027A
HCC/HCF40106B
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license isgranted by implication or otherwiseunder any patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to changewithout notice. This publication supersedes andreplaces all information previously supplied. SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascriticalcomponentsin life support devices or systems withoutexpress written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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13/13
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