SGS Thomson Microelectronics HCF4066BM1, HCF4066BEY, HCF4066BC1, HCC4066BF Datasheet

QUAD BILATERAL SWITCHFOR TRANSMISSION

OR MULTIPLEXINGOF ANALOG ORDIGITAL SIGNALS

.15V DIGITAL OR ± 7.5V PEAK-TO-PEAK

SWITCHING

.80Ω TYPICAL ON RESISTANCE FOR 15V

OPERATION

.SWITCH ON RESISTANCE MATCHED TO

WITHIN 5Ω OVER 15V SIGNAL-INPUT
RANGE

.ON RESISTANCE FLAT OVER FULL PEAK-

TO-PEAKSIGNALRANGE

.HIGH ON/OFFOUTPUT-VOLTAGE RATIO:

65dB TYP.@ fis= 10kHz,RL= 10kΩ

.HIGH DEGREE OF LINEARITY : < 0.5% DIS-

TORTIONTYP. @ fis= 1kHz, Vis= 5 Vp-p,
VDD–VSS≥ 10V,RL=10kΩ

.EXTREMELY LOW OFF SWITCH LEAKAGE

RESULTING IN VERY LOW OFFSET CUR­RENT AND HIGH EFFECTIVE OFF RESIST­ANCE; 10pA TYP. @ VDD–VSS= 10V,
TA=25°C

.EXTREMELY HIGH CONTROL INPUTIMPED-

ANCE (control circuit isolated from signal cir­cuit): 1012Ω TYP.

.LOW CROSSTALK BETWEEN SWITCHES:–

50dB TYP.@ fis= 0.9MHz,RL=1kΩ

.MATCHED CONTROL-INPUT TO SIGNAL-

OUTPUT CAPACITANCE : REDUCES OUT­PUT SIGNALTRANSIENTS

.FREQUENCYRESPONSE,SWITCH ON =

40MHz (typ.)

.QUIESCENT CURRENT SPECIFIED TO 20V

FOR HCC DEVICE

.5V, 10V, AND 15V PARAMETRIC RATINGS

.INPUT CURRENT OF 100nAAT 18V AND 25°C

FOR HCC DEVICE

.100% TESTEDFOR QUIESCENTCURRENT

.MEETSALLREQUIREMENTSOFJEDECTEN-

TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”

HCC/HCF4066B

EY

(Plastic Package)F(Ceramic FritSeal Package)

M1

(MicroPackage)

ORDER CODES :

HCC4066BF HCF4066BM1
HCF4066BEY HCF4066BC1

PIN CONNECTIONS

(PlasticChipCarrier)

C1

DESCRIPTI ON
TheHCC4066B (extended temperature range) and

HCF4066B (intermediate temperature range) are

monolithic integrated circuits, available in 14-lead
dual in-line plastic or ceramic package and plas­tic micropackage. The HCC/HCF4066B is a quad
bilateral switch intended for the transmission or
multiplexing of analog or digital signals. It is pin-for-

June1989

1/11

HCC/HCF4066B

pin compatiblewithHCC/HCF4016B, butexhibits a
much lower ON resistance. In addition, the ON re­sistanceis relativelyconstantoverthe full input-sig­nal range. The HCC/HCF4066B consists of four
independent bilateralswitches.Asinglecontrol sig­nal is required per switch.Both the p and the n de­vice in a given switch are biased ON or OFF
simultaneously by the control signal. As shown in
schematicdiagram, the wellof then-channel device

configuration eliminates the variation of theswitch­transistor threshold voltage with input signal, and
thus keepsthe ON resistance low over the fulloper­ating-signal range. The advantages over single­channel switches include peak input signal voltage
swings equal to the full supply voltage, and more
constant ON impedance over the input-signal
range. For sample-and-hold applications, however,

the HCC/HCF4016B is recommended.
on each switch is either tied to the input when the
switchis ON or to VSSwhentheswitchis OFF.This

SCHEM ATIC D IA GRAM

1 OF 4 IDENTICALSWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY.

ABSOLUTE M AXIMUM RAT IN G S

Symbol Parameter Value Unit

* Supply Voltage :HC C Types

V

DD

V

Input Voltage – 0.5 to VDD+ 0.5 V

i

DC Input Current (any one input) ± 10 mA

I

I

P

T

T

Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to VSSpin voltage.

2/11

Total Power Dissipation ( per package)

tot

Dissipation per Output Transistor
for T

Operating Temperature : HCC Types

op

Storage Temperature – 65 to + 150 °C

stg

= Full Package-temperature Range

op

HCF Types

HCF Types

– 0.5 to + 20
– 0.5 to + 18

200
100

– 55 t o + 125

–40to+85

V
V

mW
mW

°C
°C

HCC/HCF4066B

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

T

ELECTRICAL CHARACTERISTICS

(T

amb

Symbol Parameter

SIGNAL I N PU T S (V

R

∆ON Resistance

TDH Total Harmonic

*T

Low

*T

High

The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.

Supply Voltage :HC C Types

DD

HCF Types

V

Input Voltage 0 to V

I

Operating Temperature : HCC Types

op

HCF Types

=25°C,typical temperature coefficient forall VDDvalues is 0,3%/°C)

Test Conditions Value

T

* 25°CT

Low

Min. Max. Min. Typ. Max. Min. Max.

I

L

Quiescent
Device
Current (all
switches
ON or all
switches
OFF)

HCC
Types

HCF
Types

0/ 5 5 0.25 0.01 0.25 7.5
0/10 10 0.5 0.01 0.5 15
0/15 15 1 0.01 1 30
0/20 20 5 0.02 5 150
0/ 5 5 1 0.01 1 7.5
0/10 10 2 0.01 2 15
0/15 15 4 0.01 4 30

) and Outputs (Vos)

is

ON

On
Resistance

HCC
Types

HCF

V

C=VDD

RL= 10KΩ Return

V

________

DD–VSS

to

2

V

is=VSS

to V

DD

Types

RL10kΩ,VC=VDD515
between any 2
Switches, ∆R

Distorsion

- 3 dB Cutof f
Frequency(switch
on)

ON

V

C=VDD

V

SS

V

is

(sinewave centeredin 0V)

R

L

f

is

V

C=VDD

V

SS

V

is

(sine wave c entured on

= 5V,

= – 5V,

(p-p) = 5V

= 10k Ω,

= 1kHz s ine wav e

=5V,

=–5V,

(p-p) = 5V

0V)

=1kΩ

R

L

=–55°CforHCC device : – 40°CforHCF device.

= + 125°CforHCC device : + 85°CforHCF device.

V

IVDD

(V) (V)

5 800 470 1050 1300
10 310 180 400 550
15 200 125 240 320

5 850 470 1050 1200
10 330 180 400 500
15 210 125 240 300

10 10
15 5

3to18
3to15

– 55 t o + 125

–40to+85

0.4

40

DD

High

°C
°C

*

Unit

µA

Ω

Ω

%

MHz

V
V

V

3/11

HCC/HCF4066B

ELECTRICAL CHARACTERISTICS(continued)

Test Conditions Va lu e

Symbol Parameter

V

(V)

-50dB
Feedthrough
Frequency(switch
off)

- 50 dB Crosstalk
Frequency

V

C=VSS

V

is

(sine wave centured on
0V)
R

L

V

C

VC(B) = VSS=–5V
V

is

=–5V,

(p-p) = 5V

=1kΩ
(A) = VDD=+5V

(A) = 5Vp-p,
50Ω source
R

=1kΩ

L

PropagationDelay

t

pd

(signal input to
signaloutput)

RL= 200kΩ
VC=VDD,VSS= GND,
C

= 50pF , Vis=10V

L

(square wave centured on
5V)
t

= 20ns

r,tf

C

Input Capacitance VDD=+5V

is

Output

C

os

VC=VSS=–5V

Capacitance

C

CONTROL (V

V

V

Feedthrough 0.5

ios

Input/Output
Leakage
Current
Switch OFF

Control Input Low

ILC

Voltage

Control Input High

IHC

Voltage

)

C

V

HCC
Types

HCF
Types

C

V

is

=0V
V

is

=18V
V

C

V

is

=0V
V

is

=15V

Iis <10µA
Vis=VSS,Vos=V
and
Vis=VDD,Vos=V

=0V
= 18V ; V

=0V;V

=0V
= 15V ; V

=0V;V

os

os

os

os

18

15 ± 0.3 ±10

DD

10 2 2 2
15 2 2 2

SS

10 7 7 7
15 11 11 11

I

IH,IIL

*T

=–55°CforHCC device : – 40°CforHCF device.

Low

*T

= + 125°CforHCC device : + 85°CforHCF device.

High

The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.

Input
Leakage
Current

HCC

Vis≤ V

Types

VDD–VSS= 18V

HCF

V
VCC≤ VDD–V

Types

DD

DD–VSS

= 15V

SS

18 ± 0.1 ±10

15 ± 0.3 ±10–5± 0.3 ± 1

T

DD

* 25°CT

Low

* Unit

High

Min. Max. Min. Typ. Max. Min. Max.

1MHz

8MHz

52040

10 10 20

ns

15 7 15

8

pF

± 0.1 ±10

8

–3

± 0.1 ± 1

µA

–3

± 0.3 ± 1

51 11

V

5 3.5 3.5 3.5

V

–5

± 0.1 ± 1

µA

4/11