SGS Thomson Microelectronics FLC10-200H Datasheet
Application Specific Discretes
A.S.D.
FEATURES
n DEDICATED THYRISTOR STRUCTURE FOR
CAPACITANCE DISCHARGE IGNITION
OPERATION
n HIGH PULSE CURRENT CAPABILITY
240A @tp= 10µs
BENEFITS
n SPACE SAVING THANKS TO MONOLITHIC
FUNCTION INTEGRATION
n HIGH RELIABILITY WITH PLANAR
TECHNOLOGY
TM
FLC10-200H
FIRE LIGHTER CIRCUIT
TAB
3
2
1
IPAK
DESCRIPTION
The FLC10 series have been developed especially for high powercapacitance dischargeoperation. The main applications are gas lighter or
ignitor such as :
cookers / gas boilers / gas hobs...
It uses a high performance planar diffused technology adapted to high temperature and rugged
environmental conditions.
Th : Thyristor for switching operation.
Z : Zener diode to set the thresholdvoltage.
D : Diodefor reverseconduction.
R :2kΩresistor.
FUNCTIONAL DIAGRAM
pin 2
Z
Th
D
R
pin 1/3 (*)
(*)Pin1 and Pin3 must be shorted together in
the application circuit layout.
Jun 2000 - Ed: 5D
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FLC10-200H
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
TRM
I
FRM
dI/dt
Tstg
Tj
Repetitive surge peak on state current for thyristor
-30°C ≤ T
amb
≤ 120°C
Repetitive surge peak on state current for diode
-30°C ≤ T
amb
≤ 120°C
Critical rate of rise time on state current -30°C ≤ T
Storage junction temperature range
Maximum junction temperature
amb
tp =10µs
( note 1)
≤ 120°C
240 A
200 A/µs
- 40 to + 150
+ 125
Toper Operating temperature range -30 + 120 °C
T
L
Note 1: Test current waveform
Maximum lead temperature for soldering during 10s 260 °C
10µs
200ms
°C
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth(j-a) Thermal resistance junction to ambient 100 °C/W
ORDERING INFORMATION
FLC 10 - 200 H
RM
200: V = 200V
FIRE LIGHTER CIRCUIT
CIRCUIT NUMBER:
SCR + diode + Zener + Resistance
High PowerVersion
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PACKAGE H: IPAK
FLC10-200H
ELECTRICAL CHARACTERISTICS
Symbol Parameters
V
V
V
V
I
I
RM
αT
RM
BO
T
F
BO
Stand-off voltage
Breakover voltage
On-state voltage
Diode forward voltagedrop
Breakover current
Leakage current
Temperature coefficient for V
BO
V
BO
V
RM
I
I
F
V
T
I
RM
I
BO
I
V
F
T
DIODE (D) PARAMETER
Symbol Test Conditions Value Unit
V
F
IF=2A tp≤500µsTj=25°C Max. 1.7 V
THYRISTOR (Th) and ZENER (Z) PARAMETERS
V
Symbol Test conditions Min Typ Max Unit
I
RM
VRM= 200 V Tj =25°C10µA
Tj = 125°C 100 µA
V
BO
I
BO
V
T
at I
at V
BO
BO
Tj =25°C 200 225 250 V
Tj =25°C 0.5 mA
IT=2A tp≤500µsTj=25°C 1.7 V
αT 0.3 V/°C
Fig.1: Relative variation of breakover current
versus junctiontemperature.
k = I (Tj) / I (25°C)BO BO
2.5
2
1.5
1
0.5
0
-20 0 20 40 60 80 100
Tj (°C)
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