SGS Thomson Microelectronics FLC02-200D Datasheet
Application SpecificDiscretes
A.S.D.
FEATURES
SPACE SAVING :MONOLITHIC FIRE LIGHTER
FUNCTION INTEGRATION
DEDICATED THYRISTOR STRUCTURE FOR
CAPACITANCE DISCHARGE IGNITION
OPERATION
TM
FLC02-200D
FIRE LIGHTER CIRCUIT
HIGH PULSECURRENT CAPABILITY
150A @ tp = 10µs
DESCRIPTION
The FLC02 is a high performance planar dif-
-
fused technology adapted to high temperature
and rugged environmentalconditions.
It has been developed especially for capaci-
-
tance discharge operation. The main applications are ignitorcircuitssuch as :
fuel ignitiors / gasboilers...
Th : Thyristor for switchingoperation.
Z : Zener diode to set the thresholdvoltage.
D : Diode for reverseconduction.
R : 2 kOhm resistor.
1
2
3
SOT82
(Plastic)
FUNCTIONAL DIAGRAM
Z
pin 3
R
pin 2
Th
D
February 1996
pin 1
1/7
FLC02-200D
ABSOLUTE RATINGS (limiting values) : 0°C<T
amb
<90°C
Symbol Parameter Value Unit
I
TRM
I
FRM
I
TSM
Repetitivesurgepeakonstatecurrentforthyristor tp =10µs
Repetitivesurgepeakonstatecurrentfordiode
( note 1)
150 A
Non repetitivesurgepeakonstate current tp =10ms 5 A
di/dt Criticalrateof rise time on statecurrent 120 A/µs
T
stg
Tj
Toper
T
L
Storage junction temperaturerange
Maximumjunctiontemperature
Operatingtemperaturerange
Maximumleadtemperaturefor solderingduring10s 260 °C
- 40 to+150
+ 125
0+90 °C
Note 1 : Test currentwaveform
°C
µ
10 s
200ms
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th(j-a)
Thermalresistance junctionto ambient 100 °C/W
ORDERINGINFORMATION
FLC 02 - 200 D
FIRE LIGHTERCIRCUIT
PACKAGED: SOT82
2/7
CIRCUIT NUMBER : 02 =scr + diode + zener + resistance
(gate connectedto pin 3)
V
RM
200= 200 V
FLC02-200D
ELECTRICAL CHARACTERISTICS
Symbol Parameters
V
RM
V
BO
V
T
V
F
I
RM
I
BO
Stand-offvoltage
Breakovervoltage
On-statevoltagedrop
Diodevoltagedrop
Leakage current
Breakovercurrent
V
BO
V
RM
I
I
F
V
T
I
RM
I
BO
I
BO
I
V
F
1
2
T
DIODE (D) PARAMETER
Symbol Test Conditions Value Unit
V
F
IF=2A tp≤1ms Tj=25°C MAX 1.7 V
THYRISTOR(Th) and ZENER (Z) PARAMETERS
V
Symbol Testconditions Value Unit
I
RM
VRM=200V Tj = 25°CMAX 10 µA
Tj =120°C MAX 100 µA
V
BO
I
1atVBOPin3 (gate) open Tj = 25°C MAX 0.5 mA
BO
I
2atVBOPin1( c athode)and pin3(gate)in c/c Tj = 25°C MIN 40 mA
BO
V
T
Fig.1 : Relative variationof breakovercurrent(I
at I
Pin3 (gate) open Tj = 25°C MAX 250 V
BO1
IT=2A tp≤1ms Tj = 25°C MAX 1.7 V
) versus junction temperature
BO
Ibo (Tj) / Ibo (25°C)
1.4
1.2
1
IbO2
0.8
IbO1
0.6
0.4
020406080
Tj (°C)
3/7
Loading...