SGS Thomson Microelectronics FLC01-200D Datasheet
Application SpecificDiscretes
A.S.D.
FEATURES
SPACESAVING: MONOLITHICFIRE LIGHTER
FUNCTIONINTEGRATION
DEDICATED THYRISTOR STRUCTURE FOR
CAPACITANCE DISCHARGE IGNITION
OPERATION
TM
FLC01-200D
FIRE LIGHTER CIRCUIT
HIGHPULSECURRENT CAPABILITY
190A@ tp = 10µs
DESCRIPTION
The FLC01 is a high performance planar dif-
-
fused technology adapted to high temperature
and rugged environmental conditions.
It has been developed especially for capaci-
-
tance discharge operation. The main applicationsare gas lighter orignitor such as :
cookers/ gasboilers/ gas hobs...
Th : Thyristorforswitching operation.
Z :Zener diode to set the thresholdvoltage.
D : Diodefor reverseconduction.
R:2kΩresistor.
1
2
3
SOT82
(Plastic)
FUNCTIONALDIAGRAM
October 1999 Ed: 3A
1/7
FLC01-200D
ABSOLUTERATINGS
(limiting values) : -30°C<T
amb
< 120°C
Symbol Parameter Value Unit
I
TRM Repetitivesurge peak on state currentfor thyristor
I
FRM
di/dt
Tstg
Tj
Toper
T
L Maximumlead temperatureforsolderingduring10s
Note 1 : Test currentwaveform
Repetitivesurge peak on state currentfor diode
Criticalrateof rise time on statecurrent
Storage junction temperaturerange
Maximumjunction temperature
Operatingtemperaturerange
tp =10µs
(note1)
190 A
120 A/µs
- 40 to+ 150
+ 125
-30 + 120 °C
260 °C
°C
m
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth(j-a)
Thermalresistancejunctionto ambient
100
ORDERING INFORMATION
FLC 01 - 200 D
FIRELIGHTERCIRCUIT
PACKAGED : SOT82
°
C/W
2/7
CIRCUITNUMBER: 01 = scr + diode+ zener + resistance
(pin3 not connected)
V
RM
200= 200 V
FLC01-200D
ELECTRICAL CHARACTERISTICS
Symbol Parameters
V
RM
V
BO Breakovervoltage
V
T On-statevoltage
V
F
I
BO
I
RM Leakagecurrent
αT
Stand-offvoltage
Diodevoltage drop
Breakovercurrent
Thermalcoefficientfor V
BO
V
BO
V
RM
I
I
F
V
T
I
RM
I
BO
I
V
F
T
DIODE(D) PARAMETER
Symbol Test Conditions Value Unit
V
F I
=2A tp≤1ms
F
Tj=25°C MAX 1.7 V
THYRISTOR (Th) and ZENER (Z) PARAMETERS
V
Symbol Testconditions Min Typ Max Unit
I
RM
VRM= 200V
Tj=25°C1µA
Tj =125°C10µA
V
BO atI
I
BO
V
T I
α
T 0.27 V/°C
BO
atV
BO
=2A tp≤1ms
T
Tj=25°C 206 220 233 V
Tj=25°C 0.5 mA
Tj=25°C 1.7 V
Fig.1 : Relative variation of breakover current
) versusjunctiontemperature
(I
BO
k = I (Tj) / I (25°C)BO BO
2.5
2
1.5
1
0.5
0
-20 0 20 40 60 80 100
Tj (°C)
3/7
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