SGS Thomson Microelectronics ESM765-800 Datasheet
®
MAIN PRODUCTS CHARACTE RISTICS
ESM765-800
RECOVERY RECTIFIER DIODES
I
F(AV)
V
RRM
10 A
800 V
Tj (max) 150°C
V
(max) 1.35 V
F
trr (max) 300 ns
FEATURES
HIGH VOLTAGE CAPABILITY
FAST AND SOFT RECOVERY
THE SPECIFICATIONS AND CURVES
ENABLE THE DETERMINATION OF THE trr
AND I
AT 100°C UNDER USERS
RM
CONDITIONS
MOTOR CONTROLS AND CONVERTERS
SWITCH MO DE POWE R SU PP LIES
INSULATED PACKAGE: TO-220AC
Insulating voltage = 2500 V
RMS
DESCRIPTION
Fast recovery rectifiers suited for applications in
combination with superswitch transistors.
A
K
TO-220AC
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 100°C
Surge non repetitive forward current Tp = 10 m s
tp ≤ 20µs 800 V
16 A
10 A
δ
= 0.5
120 A
Sinusoidal
P
T
stg
Tj
August 1999 - Ed: 2B
Power dissipation
tot
Storage temperature range
Maximum operating junction temperature
Tc = 100°C 20 W
- 40 to + 150
°
+ 150
C
1/5
ESM765-800
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
2°C/W
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameters Test conditions Min. Typ. Max. Unit
*
I
R
**
V
F
Pulse test : * tp = 5 ms, δ < 2 %
Reverse leakage current Tj = 25°CV
Forward voltage drop Tj = 25°CI
** tp = 380 µs, δ < 2 %
Tj = 100°C
Tj = 100°C
= V
R
= 10 A
F
RRM
20 mA
1mA
1.4 V
1.35
To evaluate the conduction losses use the following equation :
P = 1.2 x I
VF = 1.2 + 0.015 I
+ 0.015 x I
F(AV)
F2(RMS)
F
RECOVERY CHARAC TERISTICS
Symbol Test conditions Min. Typ. Max. Unit
trr T
Qrr T
= 25°CI
j
= 25°CI
j
= 1A dIF/dt = - 15A/µs VR = 30V
F
= 10A dIF/dt = - 50A/µs VR = 200V
F
300 ns
2.3
µ
C
Fig. 1:
Low frequency power losses versus
average current.
2/5
Fig. 2:
Peak current ve r su s f o rm f a ct or.
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