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NPN DARLINGTON POWER MODULE
■ HIGH CURRENTPOWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ULTRAFASTFREEWHEELING DIODE
■ ISOLATEDCASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIALAPPLICATIONS:
■ MOTOR CONTROL
■ SMPS & UPS
■ DC/DC & DC/AC CONVERTERS
■ WELDING EQUIPMENT
JUNCTION CASE
th
ESM6045DV
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 600 V
CEV
Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collector Current 84 A
I
C
Collector Peak Current(tp= 10 ms) 126 A
CM
Base Current 8 A
I
B
Base Peak Current (tp=10ms) 16 A
BM
Tota l Dissipat io n at Tc=25oC 250 W
tot
Storage Temperature -55 to 150
stg
Max. OperatingJunctionTemperature 150
T
j
Insulation WithstandVoltage (AC-RMS) 2500
ISO
o
C
o
C
o
C
September1997
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ESM6045DV
THERMAL DATA
R
thj-case
R
thj-case
R
thc-h
Thermal Resistance Ju nction-case (transistor) Max
Thermal Resistance Ju nction-case (diode) Max
Thermal Resistance Cas e-heatsinkWith Conductive
Grease Applied Max
0.5
1.2
0.05
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
# Collector Cut-off
CER
I
CEV
I
EBO
V
CEO(SUS)
Curren t (R
BE
=5Ω)
# Collector Cut-off
Curren t (V
BE
=-5)
# Emitter Cut-off Current
(I
=0)
C
* Co lle ctor- Em it t e r
Sustaining Voltage
∗ DC Current Gain IC=70A VCE= 5 V 120
h
FE
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Ba se -Emit ter
BE(sat)
Saturation Voltage
di
/dt RateofRiseof
C
On-state Collector
(3 µs)••Collector-Emitter
V
CE
Dynamic Voltage
(5 µs)•• C o lle c t o r -Emitte r
V
CE
Dynamic Voltage
t
t
V
CEW
Storage Time
s
Fall Time
t
f
Cross-over Time
c
Maximum Co lle ctor
Emitter Voltage
Without Snubber
∗ Diode Forward Voltage IF=70A Tj=100oC1.61.9V
V
F
I
RM
Reverse Recovery
Current
∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 %
# Seetest circuits in databookintroduction
Toevaluatethe conductionlosses of the diode usethe followingequations:
V
= 1.5+ 0.0055 IFP =1.5 I
F
F(AV)
+ 0.0055I
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
=5V 1 mA
V
EB
IC=0.2A L=25mH
V
= 450 V
clamp
IC=50A IB=1A
I
=50A IB=1A Tj= 100oC
C
I
=70A IB=4A
C
I
=70A IB=4A Tj= 100oC
C
IC=70A IB=4A
I
=70A IB=4A Tj= 100oC
C
VCC=300V RC=0 tp=3µs
I
=1.5A Tj= 100oC
B1
VCC= 300 V RC=6Ω
I
=1.5A Tj= 100oC
B1
VCC= 300 V RC=6Ω
I
=1.5A Tj= 100oC
B1
I
=50A VCC=50V
C
V
=-5V RBB=0.3 Ω
BB
V
= 450 V IB1=1A
clamp
L = 0.05 mH T
I
=84A IB1=4A
CWo f f
V
=-5V VCC=50V
BB
L = 0.03 mH R
T
=125oC
j
VCC=200V IF=70A
di
/dt = -375 A/µsL<0.05µH
F
T
=100oC
j
2
F(RMS)
CEV
CEV
Tj= 100oC
Tj= 100oC
= 100oC
j
=0.3Ω
BB
450 V
1.2
1.6
1.35
1.7
2.3
2.4 3
375 450 A/µs
69V
34.5V
3.5
0.3
0.8
450 V
38 45 A
1.5
22
1
15
2
2
5.5
0.5
1.7
mA
mA
mA
mA
V
V
V
V
V
V
µs
µs
µs
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ESM6045DV
Safe OperatingAreas
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter Saturation Voltage
Base-Emitter SaturationVoltage
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