SGS Thomson Microelectronics ESM5045DV Datasheet

NPN DARLINGTON POWER MODULE

■ HIGH CURRENTPOWER BIPOLAR MODULE

■ VERY LOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ULTRAFASTFREEWHEELING DIODE

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIALAPPLICATIONS:

■ MOTOR CONTROL

■ SMPS & UPS

■ WELDING EQUIPMENT

JUNCTION CASE

th

ESM5045DV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CEO(sus)

V

I

I P T

V

Collector-Emitter Voltage (VBE= -5 V) 600 V

CEV

Collector-Emitter Voltage (IB= 0) 450 V Emitter-Base Voltage (IC=0) 7 V

EBO

Collector Current 60 A

I

C

Collector Peak Current(tp=10ms) 90 A

CM

Base Current 6 A

I

B

Base Peak Current (tp=10ms) 12 A

BM

Tota l Dissipat io n at Tc=25oC 175 W

tot

Storage Temperature -55 to 150

stg

Max. OperatingJunctionTemperature 150

T

j

Insulation WithstandVoltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

September1997

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ESM5045DV

THERMAL DATA

R

thj-case

R

thj-case

R

thc-h

Thermal Resistance Ju nction-case (transistor) Max Thermal Resistance Ju nction-case (diode) Max Thermal Resistance Cas e-heatsinkWith Conductive Grease Applied Max

0.71

1.2

0.05

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Curren t (R

BE

=5Ω)

# Collector Cut-off

Curren t (V

BE

=-5)

# Emitter Cut-off Current

(I

=0)

C

* Co lle cto r- Emitter

Sustaining Voltage

∗ DC Current Gain IC=50A VCE= 5 V 150

h

FE

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Ba se -Emit ter

BE(sat )

Saturation Voltage

di

/dt RateofRiseof

C

On-state Collector

(3 µs)••Collector-Emitter

V

CE

Dynamic Voltage

(5 µs)•• C o lle c t o r -Emitter

V

CE

Dynamic Voltage Storage Time

s

Fall Time

t

f

Cross-over Time

c

Maximum Co llect or

V

t t

CEW

Emitter Voltage Without Snubber

∗ Diode Forward Voltage IF=50A Tj=100oC1.51.8V

V

F

I

RM

Reverse Recovery Current

∗ Pulsed:Pulse duration= 300µs, duty cycle1.5% Toevaluatethe conductionlosses ofthe diodeuse the followingequations: V

= 1.5+ 0.0055IFP =1.5I

F

# Seetestcircuits in databookintroduction

F(AV)

+ 0.0055I

V

CE=VCEV

VCE=V V

CE=VCEV

VCE=V

=5V 1 mA

V

EB

IC=0.2A L=25mH V

= 450 V

clamp

IC=35A IB= 0.7 A I

=35A IB=0.7A Tj= 100oC

C

I

=50A IB= 2.8 A

C

I

=50A IB=2.8A Tj= 100oC

C

IC=50A IB= 2.8 A I

=50A IB=2.8A Tj= 100oC

C

VCC=300V RC=0 tp=3µs I

=1.05A Tj= 100oC

B1

VCC= 300 V RC=8.5Ω I

=1.05A Tj= 100oC

B1

VCC= 300 V RC=8.5 Ω I

=1.05A Tj= 100oC

B1

I

= 35A VCC=50V

C

V

=-5V RBB=0.6Ω

BB

V

= 450 V IB1=0.7A

clamp

L = 0.07 mH T I

=60A IB1=2.8A

CWo f f

V

=-5V VCC=50V

BB

L=42µHR T

=125oC

j

VCC=200V IF=50A di

/dt = -300 A/µsL<0.05µH

F

T

=100oC

j

2

F(RMS)

CEV

Tj= 100oC

= 100oC

j

=0.6Ω

BB

450 V

1.2

1.4

1.6

2.3

2.3 3

300 400 A/µs

4.5 8 V

2.5 4.5 V

3.2

0.25

0.75

450 V

32 38 A

1.5 20

1

13

2 2

5

0.5

1.5

mA mA

V V V V

V V

µs µs µs

2/8

ESM5045DV

Safe OperatingAreas

Derating Curve

Thermal Impedance

Collector-emitter Voltage Versus base-emitterResistance

CollectorEmitter Saturation Voltage

Base-Emitter SaturationVoltage

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