SGS Thomson Microelectronics ESM4045DV Datasheet

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWERBIPOLARMODULE

■ VERYLOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ULTRAFASTFREEWHEELING DIODE

■ ISOLATEDCASE (2500VRMS)

■ EASY TOMOUNT

■ LOW INTERNAL PARASITICINDUCTANCE

APPLICATIONS:

■ MOTORCONTROL

■ SMPS& UPS

■ DC/DC &DC/AC CONVERTERS

■ WELDINGEQUIPMENT

JUNCTIONCASE

th

ESM4045DV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

CEO(sus)

V

I

I P

T

V

Collector-Emitter Voltage (VBE= -5 V) 600 V

CEV

Collector-Emitter Voltage (IB= 0) 450 V Emitter-Base Voltage (IC=0) 7 V

EBO

Collect or Current 42 A

I

C

Collect or Peak Current ( tp=10ms) 63 A

CM

Base Current 4 A

I

B

Base Peak Current (tp=10ms) 8 A

BM

Total Dissipat ion at Tc=25oC 150 W

tot

Stora ge T emperat u re -55 to 150

stg

Max. Oper at i ng Junction T emperature 150

T

j

Insul at ion Withst and Voltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

July 1997

1/8

ESM4045DV

THERMAL DATA

R

thj-case

R

thj-case

R

thc-h

Thermal Resistance Junction-cas e (transistor) Max Thermal Resistance Junction-case (diode) Max Ther mal Res istance Cas e-hea tsink With Conductiv e Gr ease Applied Max

0.83

1.5

0.05

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Current (R

BE

=5Ω)

# Collector Cut-off

Current (V

BE

=-5)

# Emitter Cut-off Current

=0)

(I

C

* Collector-Emitter

Sust aining Volt ag e

∗ DC Current G ain IC=35A VCE= 5 V 220

h

FE

V

∗ Co llector- Emitt er

CE(sat)

Saturation Voltage

V

∗ Base-Emitt er

BE(sat )

Saturation Voltage

di

/dt Rate of Rise of

C

On-stat e Collector

(3 µs) Collector-Emitt er

V

CE

Dynamic Voltage

V

(5 µ s) Collect or- E mitt er

CE

Dynamic Voltage St orage Time

s

t

Fall Time

f

Cross-over Time

c

Maximum Collector

V

t t

CEW

Emit ter Voltage Wit hout S nubber

V

∗ Diode For ward V oltage IF=35A Tj= 100oC1.51.85V

F

I

RM

Reverse Recovery Current

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

To evaluate the conduction losses of the diode use the following equations:

= 1.5 + 0.001 IFP = 1.5 I

V

F

# See test circuits in databook introduction

F(AV)

+ 0.001 I

V

CE=VCEV

VCE=V V

CE=VCEV

VCE=V V

=5V 1 mA

EB

CEV

Tj=100oC

IC=0.2A L=25mH

= 450 V

V

clamp

IC=25A IB=0.5A I

=25A IB=0.5A Tj=100oC

C

=35A IB=2A

I

C

I

=35A IB=2A Tj=100oC

C

IC=35A IB=2A

=35A IB=2A Tj= 100oC

I

C

VCC=300V RC=0 tp=3µs

=0.75A Tj=100oC

I

B1

VCC=300V RC=12Ω

=0.75A Tj=100oC

I

B1

VCC=300V RC=12Ω

=0.75A Tj=100oC

I

B1

IC=25A VCC=50V

=-5V RBB=0.6Ω

V

BB

V

= 450 V IB1= 0.5 A

clamp

L=0.1mH T I

=42A IB1=2A

CWo f f

=-5V VCC=50V

V

BB

L = 0.06 mH R

= 125oC

T

j

=100oC

j

=0.6Ω

BB

VCC=200V IF=35A di

/dt = -200 A/µ sL<0.05µH

F

= 100oC

T

j

2

F(RMS)

1.5 20

1

13

mA mA

450 V

1.15

1.3

1.4

1.5

2.3

2.3 3

2 2

V V V V

V V

200 250 A/µ s

4.5 8 V

2.5 4.5 V

3.2

0.25

0.75

5

0.5

1.5

µs µs µs

450 V

20 24 A

2/8

ESM4045DV

Safe OperatingAreas

Derating Curve

ThermalImpedance

Collector-emitter VoltageVersus base-emitterResistance

CollectorEmitter SaturationVoltage

Base-EmitterSaturationVoltage

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