SGS Thomson Microelectronics ESM3045DV Datasheet

NPN DARLINGTON POWER MODULE

■ HIGH CURRENTPOWER BIPOLAR MODULE

■ VERY LOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ULTRAFASTFREEWHEELING DIODE

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIALAPPLICATIONS:

■ MOTOR CONTROL

■ SMPS & UPS

■ DC/DC & DC/AC CONVERTERS

■ WELDING EQUIPMENT

JUNCTION CASE

th

ESM3045DV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CEO(sus)

V

I

I P T

V

Collector-Emitter Voltage (VBE= -5 V) 600 V

CEV

Collector-Emitter Voltage (IB= 0) 450 V Emitter-Base Voltage (IC=0) 7 V

EBO

Collector Current 24 A

I

C

Collector Peak Current(tp=10ms) 36 A

CM

Base Current 2.5 A

I

B

Base Peak Current (tp=10ms) 5 A

BM

Tota l Dissipat io n at Tc=25oC 125 W

tot

Storage Temperature -55 to 150

stg

Max. OperatingJunctionTemperature 150

T

j

Insulation WithstandVoltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

September1997

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ESM3045DV

THERMAL DATA

R

thj-case

R

thj-case

R

thc-h

Thermal Resistance Ju nction-case (transistor) Max Thermal Resistance Ju nction-case (diode) Max Thermal Resistance Cas e-heatsinkWith Conductive Grease Applied Max

1 2

0.05

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Curren t (R

BE

=5Ω)

# Collector Cut-off

Curren t (V

BE

=-5)

# Emitter Cut-off Current

(I

=0)

C

* Co lle ctor- Em it t e r

Sustaining Voltage

∗ DC Current Gain IC=20A VCE= 5 V 120

h

FE

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Ba se -Emit ter

BE(sat)

Saturation Voltage

di

/dt RateofRiseof

C

On-state Collector

(3 µs)••Collector-Emitter

V

CE

Dynamic Voltage

(5 µs)•• C o lle c t o r -Emitte r

V

CE

Dynamic Voltage Storage Time

s

Fall Time

t

f

Cross-over Time

c

Maximum Co lle ctor

V

t t

CEW

Emitter Voltage Without Snubber

∗ Diode Forward Voltage IF=20A Tj=100oC1.72V

V

F

I

RM

Reverse Recovery Current

∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 % # Seetest circuits in databookintroduction Toevaluatethe conductionlosses of the diode usethe followingequations: V

= 1.47+ 0.0026 IFP = 1.47I

F

F(AV)

+ 0.0026I

V

CE=VCEV

VCE=V V

CE=VCEV

VCE=V

=5V 1 mA

V

EB

IC=0.2A L=25mH V

= 450 V

clamp

IC=15A IB= 0.3 A I

=15A IB=0.3A Tj= 100oC

C

I

=20A IB= 1.2 A

C

I

=20A IB=1.2A Tj= 100oC

C

IC=20A IB= 1.2 A I

=20A IB=1.2A Tj= 100oC

C

VCC=300V RC=0 tp=3µs I

=0.45A Tj= 100oC

B1

VCC= 300 V RC=20Ω I

=0.45A Tj= 100oC

B1

VCC= 300 V RC=20Ω I

=0.45A Tj= 100oC

B1

I

=15A VCC=50V

C

V

=-5V RBB=0.6Ω

BB

V

= 450 V IB1=0.3A

clamp

L = 0.17 mH T I

=24A IB1=1.2A

CWo f f

V

=-5V VCC=50V

BB

L=0.1mH R T

=125oC

j

VCC=200V IF=20A di

/dt = -125 A/µsL<0.05µH

F

T

=100oC

j

2

F(RMS)

CEV

Tj= 100oC

= 100oC

j

=0.6Ω

BB

450 V

1.2

1.3

1.4

1.6

2.1

2.1 3

125 160 A/µs

4.5 8 V

2.5 4.5 V

2.1

0.15

0.5

450 V

11 14 A

1.5 17

1

12

2 2

4

0.4

1.2

mA mA

V V V V

V V

µs µs µs

2/8

ESM3045DV

Safe OperatingAreas

Derating Curve

Thermal Impedance

Collector-emitter Voltage Versus base-emitterResistance

CollectorEmitter Saturation Voltage

Base-Emitter SaturationVoltage

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