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NPN DARLINGTON POWER MODULE
■ HIGH CURRENTPOWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ULTRAFASTFREEWHEELING DIODE
■ ISOLATEDCASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIALAPPLICATIONS:
■ MOTOR CONTROL
■ SMPS & UPS
■ DC/DC & DC/AC CONVERTERS
■ WELDING EQUIPMENT
JUNCTION CASE
th
ESM3045DV
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 600 V
CEV
Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collector Current 24 A
I
C
Collector Peak Current(tp=10ms) 36 A
CM
Base Current 2.5 A
I
B
Base Peak Current (tp=10ms) 5 A
BM
Tota l Dissipat io n at Tc=25oC 125 W
tot
Storage Temperature -55 to 150
stg
Max. OperatingJunctionTemperature 150
T
j
Insulation WithstandVoltage (AC-RMS) 2500
ISO
o
C
o
C
o
C
September1997
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ESM3045DV
THERMAL DATA
R
thj-case
R
thj-case
R
thc-h
Thermal Resistance Ju nction-case (transistor) Max
Thermal Resistance Ju nction-case (diode) Max
Thermal Resistance Cas e-heatsinkWith Conductive
Grease Applied Max
1
2
0.05
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
# Collector Cut-off
CER
I
CEV
I
EBO
V
CEO(SUS)
Curren t (R
BE
=5Ω)
# Collector Cut-off
Curren t (V
BE
=-5)
# Emitter Cut-off Current
(I
=0)
C
* Co lle ctor- Em it t e r
Sustaining Voltage
∗ DC Current Gain IC=20A VCE= 5 V 120
h
FE
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Ba se -Emit ter
BE(sat)
Saturation Voltage
di
/dt RateofRiseof
C
On-state Collector
(3 µs)••Collector-Emitter
V
CE
Dynamic Voltage
(5 µs)•• C o lle c t o r -Emitte r
V
CE
Dynamic Voltage
Storage Time
s
Fall Time
t
f
Cross-over Time
c
Maximum Co lle ctor
V
t
t
CEW
Emitter Voltage
Without Snubber
∗ Diode Forward Voltage IF=20A Tj=100oC1.72V
V
F
I
RM
Reverse Recovery
Current
∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 %
# Seetest circuits in databookintroduction
Toevaluatethe conductionlosses of the diode usethe followingequations:
V
= 1.47+ 0.0026 IFP = 1.47I
F
F(AV)
+ 0.0026I
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
=5V 1 mA
V
EB
IC=0.2A L=25mH
V
= 450 V
clamp
IC=15A IB= 0.3 A
I
=15A IB=0.3A Tj= 100oC
C
I
=20A IB= 1.2 A
C
I
=20A IB=1.2A Tj= 100oC
C
IC=20A IB= 1.2 A
I
=20A IB=1.2A Tj= 100oC
C
VCC=300V RC=0 tp=3µs
I
=0.45A Tj= 100oC
B1
VCC= 300 V RC=20Ω
I
=0.45A Tj= 100oC
B1
VCC= 300 V RC=20Ω
I
=0.45A Tj= 100oC
B1
I
=15A VCC=50V
C
V
=-5V RBB=0.6Ω
BB
V
= 450 V IB1=0.3A
clamp
L = 0.17 mH T
I
=24A IB1=1.2A
CWo f f
V
=-5V VCC=50V
BB
L=0.1mH R
T
=125oC
j
VCC=200V IF=20A
di
/dt = -125 A/µsL<0.05µH
F
T
=100oC
j
2
F(RMS)
CEV
CEV
Tj= 100oC
Tj= 100oC
= 100oC
j
=0.6Ω
BB
450 V
1.2
1.3
1.4
1.6
2.1
2.1 3
125 160 A/µs
4.5 8 V
2.5 4.5 V
2.1
0.15
0.5
450 V
11 14 A
1.5
17
1
12
2
2
4
0.4
1.2
mA
mA
mA
mA
V
V
V
V
V
V
µs
µs
µs
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ESM3045DV
Safe OperatingAreas
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter Saturation Voltage
Base-Emitter SaturationVoltage
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