SGS Thomson Microelectronics ESM2012DV Datasheet
NPN DARLINGTON POWER MODULE
■ HIGH CURRENTPOWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ULTRAFASTFREEWHEELING DIODE
■ ISOLATEDCASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIALAPPLICATIONS:
■ MOTOR CONTROL
■ UPS
■ DC/DC & DC/AC CONVERTERS
JUNCTION TO CASE
th
ESM2012DV
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 150 V
CEV
Collector-Emitter Voltage (IB= 0) 120 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collector Current 120 A
I
C
Collector Peak Current(tp= 10 ms) 180 A
CM
Base Current 2 A
I
B
Base Peak Current (tp=10ms) 4 A
BM
Tota l Dissipat io n at Tc=25oC 175 W
tot
Storage Temperature -55 to 150
stg
Max. OperatingJunctionTemperature 150
T
j
Insulation WithstandVoltage (AC-RMS) 2500
ISO
o
C
o
C
o
C
September1997
1/8
ESM2012DV
THERMAL DATA
R
thj-case
R
thj-case
R
thc-h
Thermal Resistance Ju nction-case (transistor) Max
Thermal Resistance Ju nction-case (diode) Max
Thermal Resistance Cas e-heatsinkWith Conductive
Grease Applied Max
0.7
0.9
0.05
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
# Collector Cut-off
CER
I
CEV
I
EBO
V
CEO(SUS)
Curren t (R
BE
=5Ω)
# Collector Cut-off
Curren t (V
BE
=-5V)
# Emitter Cut-off Current
(I
=0)
C
* Co lle cto r- Emitter
Sustaining Voltage
∗ DC Current Gain IC= 100 A VCE= 5 V 1200
h
FE
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emit ter
BE(sat )
Saturation Voltage
di
/dt RateofRiseof
C
On-state Collector
(3 µs)•• Collector-Emitter
V
CE
Dynamic Voltage
(5 µs)•• Collector-Emitter
V
CE
Dynamic Voltage
Storage Time
s
Fall Time
t
f
Cross-over Time
c
Maximum Co llect or
V
t
t
CEW
Emitter Voltage
Without Snubber
∗ Diode Forward Voltage IF= 100 A Tj=100oC0.921V
V
F
I
RM
Reverse Recovery
Current
∗ Pulsed:Pulse duration= 300µs, duty cycle1.5%
# Seetestcircuits in databookintroduction
Toevaluatethe conductionlosses ofthe diodeuse the followingequations:
V
= 0.66+ 0.0034 IFP = 0.66I
F
F(AV)
+ 0.0034I
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
=5V 1 mA
V
EB
IC=5A L=15mH
V
= 125 V
clamp
IC=70A IB=0.25A
I
=70A IB=0.25A Tj= 100oC
C
I
= 100 A IB=1A
C
I
= 100 A IB=1A Tj= 100oC
C
IC= 100 A IB=1A
I
= 100 A IB=1A Tj= 100oC
C
VCC=90V RC=0 tp=3µs
I
=0.5A Tj= 100oC
B1
VCC=90V RC=1.3Ω
I
=0.5A Tj= 100oC
B1
VCC=90V RC=1.3Ω
I
=0.5A Tj= 100oC
B1
I
=70A VCC=90V
C
V
=-5V RBB= Ω
BB
V
= 125 V IB1=0.25A
clamp
L=60µHT
I
= 120 A IB1=1A
CWo f f
V
=-5V VCC=90V
BB
L=60µHR
T
=125oC
j
VCC=125V IF= 100 A
di
/dt = -200 A/µsL<0.05µH
F
T
=100oC
j
2
F(RMS)
CEV
CEV
Tj= 100oC
Tj= 100oC
=100oC
j
= 1.25 Ω
BB
125 V
1.25
1.35
1.5
1.65
2.3
2.35 3
200 230 A/µs
23V
1.8 2.5 V
0.9
0.15
0.3
125 V
10 14 A
1.5
10
1
7
1.5
2
2
0.3
0.6
mA
mA
mA
mA
V
V
V
V
V
V
µs
µs
µs
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ESM2012DV
Safe OperatingAreas
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter Saturation Voltage
Base-Emitter SaturationVoltage
3/8
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