Datasheet ESM1602BFP, ESM1602B Datasheet (SGS Thomson Microelectronics)

QUAD COMPARATOR INTERFACECIRCUIT

.

MINIMUM HYSTERESIS VOLTAGE AT EACH
INPUT: 0.3V

.OUTPUTCURRENT : 15 mA

.LARGESUPPLY VOLTAGERANGE: + 10Vto

+35V

.

INTERNAL THERMALPROTECTION

.INPUT AND OUTPUT CLAMPING PROTEC-

TIONDIODES.

DESCRIP TION

TheESM1602Bisa quadruplecomparatorintented
to provide an interface between signal processing
and transmitting lines in very noisy industrial sur­roundings.

Outputof eachcomparator,usedaslinedriver,sup­pliesa constantcurrent (PNP output stage)and is
specially well protected against powerful overvol­tages.The open collector output circuit allows the
connectionofseveralcomparatorsto asingletrans­mitting line.

The ESM1602Bcan operate as receiver on a line
transmitting noisy high-voltagesignals. Hysteresis
effect, internally implemented on inputs of each
comparator providesan excellentnoise immunity.
In addition, each input is also protected against
overvoltages.

ESM1602B

DIP14

SO16

ORDER ING NUMBERS: ESM1602B (DIP14)

The ESM1602Bcan operate in a wide supply vol­tage range (standard operational amplifier ±

supplyor single + 12 V or + 24 V suppliesusedin
industrialelectronicsets).

Moreover,internalthermal protection circuitry cuts
outtheoutputcurrentofthefourcomparatorswhen
powerdissipationbecomesexcessive.

ESM1602BFP(SO16)

15 V

PIN CONNECTIO NS (top view)

DIP14 SO16

1 -Inverting input 1
2 -Non-inverting input 1
3 -Output 1
4 -Non-inverting input 2
5 -Inverting input 2
6 -Output 2
7 -GND
8 -Output 3

9 -Inverting input 3
10 -Non-inverting input 3
11 -Output 4
12 -Non-inverting input 4
13 -Inverting input 4
14 -V

CC

January1996

1 -Inverting input 1
2 -Non-inverting input 1
3 -Output 1
4 -Non-inverting input 2
5 -Inverting input 2
6 -Output 2
7 -GND
8 -N.C.

9 -N.C.
10-Output 3
11-Inverting input 3
12-Non-inverting input 3
13-Output 4
14-Non-inverting input 4
15-Inverting input 4
16-V

CC

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ESM1602B

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

O (max)

P
T

T

Supply Voltage 45 V

CC

Differential Input Voltage 45 V

ID

Input Voltage –0.7 to +45 V

I

Output Current Internally Limited mA
Power Dissipation Internally Limited W

tot

Operating Ambient Temperature Range –25 to +85

op

Storage Temperature Range –40 to +150

stg

o

C

o

C

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ESM1602B

ELECTRICAL CHARACTERISTICS

=

V

+35V, -25

CC

Symbol Parameter Min. Typ. Max. Typ. Fig.

+

V

I

–

V

I

V

C

I

IB

I

SC

V

CC–VO

V

O

I

CC

S

VO

V

F

– Energy of Pulses against which Circuit Output is Protected

– Pulsed Current Applied to Protective Output Diodes

Notes : 1. When negative inputis biased between0 and 2 volts output is always low.

2. Comparator hysteresis voltageon positiveinput on the one handand negativeinput on the other hand equalssumofinputcontrol
voltages V

3. Inputcurrent flows out of thecircuitowing toPNP inputstage. This current isconstant and independent ofoutputlevel.Sonoload
changeis transmittedtoinputs.

4. By definition,a circuit is immunized againstpowerful signals when no durable characteristic change occurs aftertheapplication of
thesesignals and when the circuithas not been destroyed.
In industrialsurroundings, parasitic signals containusually highvoltage (over 200 V) AC harmonics having variable impedance of
500 Ω to10kΩ.
Thepowerdissipationofthesesignalsis dividedbetweenclampingdiodesandtheV
energy level.The injectedcurrent valuecannotin any caseexceed3A.

5. Output protectivediodes are testedindividually by means of positiveand negative discharge voltagesofa capacitor. Thenegative
discharge controloccurs througha singlediode.Duringpositivedischarge, due totheproperties of integration,a groundedcollector
PNP transistorappearsin parallelwiththe clamping diodeconnected to V
beinggreater than VCC. If T is the totaldischarge duration, energy dissipated in the circuitis:

o

C ≤ T

≤ +85oC (unless otherwise specified)

amb

Input Voltage Range - Note 1

Non-inverting Input
Inverting Input

0
2

33
33

V

V
Input Control Voltage (2V < VCM< 33V) - Note 2 150 500 mV 8
Input Bias Current - Note 3 1 5

µA

Short-circuit Output Current

= +10 to +35 V 6 25 mA

V

CC

Output Saturation Voltage (high level) - (IO= –10mA) 1 1.5 V 11
Output Saturation Voltage (high level) - (IO= –10mA) 1 1.6 V 12
Supply Current

R

=∞for the 4 Comparators

L

Common for the 4 Comparators

R

L

Output Slew-rate (RL=3kΩ,T

amb

= +25oC)

4

10

1

13

6

mA
mA

V/µs

Input Protective Diode Forward Voltage

(I = 20mA, T

= +25oC) - Note 4 20 mJ

(T

amb

= +25oC) - Note 5 0.4 A 15

(T

amb

C1+VC2

= +25oC) 1.5 V

amb

orVC3+V

C4.

.Simulationisusedtodeterminethemaximum

CC

. A partofthe current flowsthrough this transistor, V

CC

9

13,14

CE

Fora certaininjected current, the lower thecurrent I
cuit.Topology andtechnological processeshave been chosen to shortenthis current gain.

, thatistosaythelower the PNP currentgain the smaller theenergy is dissipatedinthecir-

2

W=

T

[i

1⋅vd +i2 (VCC + vd)

⌠⌡

O

]

dt

3/11

ESM1602B

Figure 1: InputBias Current Figure2: OutputSaturationVoltage

Figure 3:

OutputSaturationVoltage

Figure4:

ShortCircuit Current

4/11

TYPICAL APP L ICATIONS
Figure 5 :Conversionof DTL, TTL, MOSSignalson a TransmittingLine.

ESM1602B

Figure6 :

Receptionof HighlyNoisySignals.

5/11

ESM1602B

Figure 7.

TEST CIRCUITS

Figure 8.

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Figure 9. Figure 10.

Figure 11. Figure12.

ESM1602B

Figure 13. Figure14.

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ESM1602B

Figure 15.

Figure 16:

ResponseTime.

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DIP14PACKAGEMECHANICAL DATA

Dimensions Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

i 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

ESM1602B

DIP14.TBL

9/11

ESM1602B

S016PACKAGE MECHANICAL DATA

Dimensions Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.75 0.069
a1 0.1 0.2 0.004 0.008
a2 1.6 0.063

b 0.35 0.46 0.014 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.020
c1 45

D 9.8 10 0.386 0.394

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 8.89 0.350

F 3.8 4.0 0.150 0.157

G 4.6 5.3 0.181 0.209

L 0.5 1.27 0.020 0.050

M 0.62 0.024

S8

o

(typ.)

o

(max.)

SO16.TBL

10/11

ESM1602B

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the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

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 1997 SGS-THOMSON Microelectronics – Printedin Italy – All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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