SGS Thomson Microelectronics ESDALC6V1W5 Datasheet
®
ESDALC6V1W5
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
■
Printers
■
Communication systems and cellular phones
■
Video equipment
■
Set top boxes
■
FEATURES
4 unidirectional TRANSIL™ functions.
■
ESD Protection: IEC61000-4-2 level 4
■
■ Breakdown voltage V
■ Low leakage current < 1µA @ 3 Volts
Low capacitance device
■
DESCRIPTION
The ESDALC6V1W5 is a 4-bit wide monolithic
suppressor which is designed to protect component
connected to data and transmission lines against
ESD.
It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients.
= 6.1V min
BR
QUAD TRANSIL™ ARRAY
FOR ESD PROTECTION
SOT323-5L
FUNCTIONAL DIAGRAM
I/01
GND
I/02
I/04
I/03
BENEFITS
■
High ESD protection level : up to 25 kV.
■
Capacitance: 12pF @ 0V Typ.
■
High integration.
■
Suitable for high density boards.
COMPLIESWITH THE FOLLOWINGSTANDARDS :
■
IEC61000-4-2 level 4: 15 kV (air discharge)
8kV(contactdischarge)
■
MIL STD 883C-Method 3015-6 : class 3.
(human body model) 25kV (HBM)
June 2002 - Ed: 4A
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ESDALC6V1W5
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
op
ELECTRICAL CHARACTERISTICS (T
ESD discharge - MIL STD 883E - Method 3015-7
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Peak pulse power (8/20 µs)
Junction temperature
Storage temperature range
Operating temperature range
= 25°C)
amb
±25
±15
±8
25 W
150 °C
-55to+150 °C
-40to+150 °C
Symbol Parameter
I
V
RM
V
BR
V
CL
Stand-off voltage
Breakdown voltage
Clamping voltage
kV
I
RM
I
PP
C
Rd
Types VBR@I
ESDALC6V1W5
Note 1 : Square pulse Ipp = 15A, tp=2.5µs.
Note 2 : ∆ VBR= αT* (Tamb -25°C) * VBR(25°C)
Leakage current
Peak pulse current
Capacitance per line
Dynamic resistance
min. max. max. typ. max. typ. max.
VVmAµAVm
6.1 7.2 1 1 3 1100 6 7.5 9.5
R
V
V
CL
slope : 1 / R
IRM@V
RM
V
RM
BR
I
RM
I
R
d
Rd αTC C
note 1 note 2 3V bias 3V bias
Ω10
I
PP
-4
/°C pF pF
V
2/9
ESDALC6V1W5
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
Ppp[Tj initial] / Ppp [Tj initial = 25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150 175
Tj(°C)
Fig. 3: Junction capacitance versus reverse voltage
applied (typical values).
C(pF)
14
12
F=1MHz
Vosc=30mV
Tj=25°C
RMS
Fig. 2: Peak pulse power versusexponential pulse
duration.
Ppp(W)
100
tp(µs)
10
1 10 100
Tj initial = 25°C
Fig. 4: Clamping voltage versus peak pulse current (maximum values, rectangular waveform).
Ipp(A)
100.0
10
8
6
4
2
0
012345
VR(V)
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
IR [Tj] / IR [Tj=25°C]
100
10
1
25 50 75 100 125
Tj(°C)
10.0
1.0
Vcl(V)
0.1
0 102030405060
tp=2.5µs
Tj initial =25°C
Fig. 6: Application example
I/02
I/01
Connector
I/04
I/03
IC
to be
protected
3/9
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