SGS Thomson Microelectronics ESDA6V2S6, ESDA6V1S3 Datasheet

ESDA6V1S3
ApplicationSpecificDiscretes
A.S.D.
APPLICATIONS
Where transient overvoltage protection in ESD sensitiveequipment isrequired,suchas :
-COMPUTERS
-PRINTERS
-COMMUNICATIONSYSTEMS
-GSMHANDSETSANDACCESSORIES
-OTHERTELEPHONESETS
FEATURES
18 UNIDIRECTIONALTRANSIL FUNCTIONS LOWLEAKAGECURRENT: I 200 W PEAKPULSEPOWER(8/20µs)
max.<2 µA
R
ESDA6V2S6
TRANSIL ARRAY
FOR ESD PROTECTION
SO20
ESDA6V1S3
SSOP20
ESDA6V2S6
DESCRITION
The ESDA6xxSx is a monolithic voltage suppressordesignedto protectcomponentswhich are connected to data and transmission lines againstESD.
It clamps the voltage just above the logic level supply for positive transients, and to a diode drop belowground for negative transients.
BENEFITS
HighESDprotection level: upto 25 kV Highintegration Suitablefor highdensityboards
COMPLIESWITH THEFOLLOWING STANDARDS :
IEC1000-4-2: level4
MILSTD883C-Method3015-6: class3 (humanbodymodel)
FUNCTIONALDIAGRAM
October 1998 Ed: 2A
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ESDA6V1S3 / ESDA6V2S6
ABSOLUTEMAXIMUM RATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
V
PP
Electrostaticdischarge
25 kV
MILSTD883C- Method3015-6
P
PP
T
stg
T
j
T
L
ELECTRICALCHARACTERISTICS
Peakpulse power(8/20µs) 200 W Storagetemperaturerange
Maximumjunction temperature
- 55 to +150 150
Maximumlead temperatureforsolderingduring 10s 260 °C
(T
=25°C)
amb
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
Stand-offvoltage Breakdownvoltage Clampingvoltage Leakagecurrent
°C °C
I
PP
α
T Voltagetemperaturecoefficient
Peak pulsecurrent
C Capacitance
Rd Dynamicresistance
V
F
Types VBR@I
ESDA6V1S3 ESDA6V2S6
Note 1: Betweenany I/O pin and Ground Note 2: Square pulse, IPP= 25A forESDA6V1S3and IPP= 15Afor ESDA6V2S6 , tp= 2.5µs Note 3: VBR= αT*[T
Forwardvoltagedrop
I
R
min. max. max. typ. max. typ. max.
note1 note1 note 2 note 3 0V bias
VVmAµAV
6.1 7.2 1 2 5.25 0.5 6 120 1.25 200
6.2 7.2 1 2 5.25 0.5 6 100 1.25 200
-25] * VBR(25°C)
amb
RM
@V
RM
Rd
10
TC V
α
-4
/°CpF V mA
@I
F
F
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CALCULATION OF THECLAMPING VOLTAGE USEOFTHEDYNAMICRESISTANCE
TheESDAfamilyhasbeen designed to clamp fast spikes like ESD. Generally the PCB designers need to calculate easily the clamping voltageV
CL
This is why we give the dynamic resistance in addition to the classical parameters. The voltage across the protection cell can be calculated with thefollowingformula:
V
CL=VBR
+RdI
PP
WhereIppisthepeakcurrentthroughtheESDAcell.
DYNAMICRESISTANCEMEASUREMENT
Theshortdurationof the ESDhasled us toprefer amoreadaptedtestwave,asbelowdefined,tothe classical8/20µs and 10/1000µssurges.
I
Ipp
ESDA6V1S3 / ESDA6V2S6
As the value of the dynamic resistance remains stable for a surge duration lower than 20µs, the
.
2.5µsrectangularsurgeis welladapted.Inaddition bothrise and fall times are optimized to avoid any parasiticphenomenonduring the measurementof Rd.
2µs
tp = 2.5µs
2.5µsdurationmeasurementwave.
t
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ESDA6V1S3 / ESDA6V2S6
Fig. 1
junctiontemperature.
: Peak power dissipation versus initial
Fig. 2 :
Peak pulse power versus exponential
pulseduration(Tj initial = 25 °C).
Ppp[Tj initial]/Pp[Tjinitial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0 0 25 50 75 100 125 150
Tj initial(°C)
Fig. 3 : Clamping voltage versus peak pulse current(Tj initial =25 °C). Rectangularwaveformtp= 2.5 µs.
Ipp(A)
50.0
10.0
tp=2.5µs
Ppp(W)
2000 1000
100
10
1 10 100
tp(µs)
Fig. 4 : Capacitance versus reverse applied voltage(typicalvalues).
C(pF)
100
F=1MHz Vosc=30mV
50
1.0
V (V)CL
0.1 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Fig.5 : Relativevariationof leakagecurrentversus junctiontemperature(typicalvalues).
RR
I [Tj] / I [Tj=25°C]
200 100
10
Tj(°C)
1
25 50 75 100 125
20
V (V)R
10
12 510
Fig. 6 :
Peak forward voltage drop versus peak
forwardcurrent (typicalvalues).
I (A)
FM
5.00
Tj=25°C
1.00
0.10
V (V)FM
0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
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APPLICATIONEXAMPLE : 1 - Protectionof logic-level signals.
(ex: centronicsjunction)
ESDA6V1S3 / ESDA6V2S6
2 - Protectionof symmetricalsignals. Note: Capacitancevaluebetween any I/Opinand
Groundis dividedby2.
D1
D2
Dn
0to5V
0to5V
0to5V
A1
A2
A16
+/- 2.5 V
+/- 2. 5 V
+/- 2.5 V
ImplementingitsASD
TM
technology,SGS-Thomson hasdevelopedamonolithicTRANSILdiodearray, which is a reliable protection against electrostatic overloads for computer I/O ports, modems, GSM handsetsand accessoriesor othersimilar systems with data outputs. The ESDAxxSx integrates 18 TRANSILdiodesin acompactpackagethat canbe easily mounted close to the circuitry to be protected, eliminating the assembly costs
associated with the use of discrete diodes, and alsoincreasingsystemreliability.
EachTRANSILhas abreakdownvoltage between
6.2V (minimum) and 7.2V (maximum). When the inputvoltageis lower than the breakdown voltage, the diodes present a high impedance to ground. For short overvoltage pulses, the fast-acting diodesprovide analmostinstantaneousresponse, clampingthe voltageto a safe level.
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ESDA6V1S3 / ESDA6V2S6
ORDER CODE
ESD ARRAY
ESDA 6V1 S 3 RL
min
V
BR
PACKAGING: RL =Tape andreel
= Tube
PACKAGE : 3 : SO20 6 : SSOP20
MARKING :
Logo,date code
TYPE MARKING
ESDA6V1S3 E6V1S3 ESDA6V2S6 ESDA6V2S6
Packaging :
Preferredpackagingis tapeand reel.
PACKAGEMECHANICAL DATA
SO20 (Plastic)
D
A
K
e
A1B
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
hx45°
A 2.35 2.65 0.092 0.104
A1 0.10 0.20 0.004 0.008
L
C
B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13.0 0.484 0.512
Weight:
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0.55g.
EH
E 7.40 7.60 0.291 0.299
e 1.27 0.050 H 10.0 10.65 0.394 0.419
h 0.25 0.75 0.010 0.029
L 0.50 1.27 0.020 0.050 K8°(max)
PACKAGEMECHANICAL DATA
SSOP20 (Plastic)
L
2
A
A
b
D
20
e
11
101
k
E1
E
A1 c
ESDA6V1S3 / ESDA6V2S6
DIMENSIONS
REF.
A 2.00 0.079 A1 0.25 0.010 A2 1.51 2.00 0.059 0.079
b 0.25 0.30 0.35 0.010 0.012 0.014
c 0.10 0.35 0.004 0.014 D 7.05 8.05 0.278 0.317 E 7.60 8.70 0.299 0.343
E1 5.02 6.10 6.22 0.198 0.240 0.245
e 0.65 0.026
k0° 10° 0° 10°
L 0.25 0.50 0.80 0.010 0.020 0.031
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
Weight:
Informationfurnished is believedto beaccurate andreliable. However, STMicroelectronics assumesno responsibilityfor the consequences of use ofsuch informationnor forany infringementof patentsor otherrights ofthirdparties which mayresult fromits use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publicationsupersedes and replaces all informationpreviouslysupplied. STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written ap­proval of STMicroelectronics.
0.18g.
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