SGS Thomson Microelectronics ESDA6V2S6, ESDA6V1S3 Datasheet

ESDA6V1S3



ApplicationSpecificDiscretes

A.S.D.

APPLICATIONS

Where transient overvoltage protection in ESD
sensitiveequipment isrequired,suchas :

-COMPUTERS

-PRINTERS

-COMMUNICATIONSYSTEMS

-GSMHANDSETSANDACCESSORIES

-OTHERTELEPHONESETS

FEATURES

18 UNIDIRECTIONALTRANSIL FUNCTIONS
LOWLEAKAGECURRENT: I
200 W PEAKPULSEPOWER(8/20µs)



max.<2 µA

R

ESDA6V2S6

TRANSIL ARRAY

FOR ESD PROTECTION

SO20

ESDA6V1S3

SSOP20

ESDA6V2S6

DESCRITION

The ESDA6xxSx is a monolithic voltage
suppressordesignedto protectcomponentswhich
are connected to data and transmission lines
againstESD.

It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
belowground for negative transients.

BENEFITS

HighESDprotection level: upto 25 kV
Highintegration
Suitablefor highdensityboards

COMPLIESWITH THEFOLLOWING STANDARDS :

IEC1000-4-2: level4

MILSTD883C-Method3015-6: class3
(humanbodymodel)

FUNCTIONALDIAGRAM

October 1998 Ed: 2A

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ESDA6V1S3 / ESDA6V2S6

ABSOLUTEMAXIMUM RATINGS(T

amb

=25°C)

Symbol Parameter Value Unit

V

PP

Electrostaticdischarge

25 kV

MILSTD883C- Method3015-6

P

PP

T

stg

T

j

T

L

ELECTRICALCHARACTERISTICS

Peakpulse power(8/20µs) 200 W
Storagetemperaturerange

Maximumjunction temperature

- 55 to +150
150

Maximumlead temperatureforsolderingduring 10s 260 °C

(T

=25°C)

amb

Symbol Parameter

V

RM

V

BR

V

CL

I

RM

Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent

°C
°C

I

PP

α

T Voltagetemperaturecoefficient

Peak pulsecurrent

C Capacitance

Rd Dynamicresistance

V

F

Types VBR@I

ESDA6V1S3
ESDA6V2S6

Note 1: Betweenany I/O pin and Ground
Note 2: Square pulse, IPP= 25A forESDA6V1S3and IPP= 15Afor ESDA6V2S6 , tp= 2.5µs
Note 3: ∆VBR= αT*[T

Forwardvoltagedrop

I

R

min. max. max. typ. max. typ. max.

note1 note1 note 2 note 3 0V bias

VVmAµAV

6.1 7.2 1 2 5.25 0.5 6 120 1.25 200

6.2 7.2 1 2 5.25 0.5 6 100 1.25 200

-25] * VBR(25°C)

amb

RM

@V

RM

Rd

Ω10

TC V

α

-4

/°CpF V mA

@I

F

F

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CALCULATION OF THECLAMPING VOLTAGE
USEOFTHEDYNAMICRESISTANCE

TheESDAfamilyhasbeen designed to clamp fast
spikes like ESD. Generally the PCB designers
need to calculate easily the clamping voltageV

CL

This is why we give the dynamic resistance in
addition to the classical parameters. The voltage
across the protection cell can be calculated with
thefollowingformula:

V

CL=VBR

+RdI

PP

WhereIppisthepeakcurrentthroughtheESDAcell.

DYNAMICRESISTANCEMEASUREMENT

Theshortdurationof the ESDhasled us toprefer
amoreadaptedtestwave,asbelowdefined,tothe
classical8/20µs and 10/1000µssurges.

I

Ipp

ESDA6V1S3 / ESDA6V2S6

As the value of the dynamic resistance remains
stable for a surge duration lower than 20µs, the

.

2.5µsrectangularsurgeis welladapted.Inaddition
bothrise and fall times are optimized to avoid any
parasiticphenomenonduring the measurementof
Rd.

2µs

tp = 2.5µs

2.5µsdurationmeasurementwave.

t

3/7

ESDA6V1S3 / ESDA6V2S6

Fig. 1

junctiontemperature.

: Peak power dissipation versus initial

Fig. 2 :

Peak pulse power versus exponential

pulseduration(Tj initial = 25 °C).

Ppp[Tj initial]/Pp[Tjinitial=25°C]

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 25 50 75 100 125 150

Tj initial(°C)

Fig. 3 : Clamping voltage versus peak pulse
current(Tj initial =25 °C).
Rectangularwaveformtp= 2.5 µs.

Ipp(A)

50.0

10.0

tp=2.5µs

Ppp(W)

2000
1000

100

10

1 10 100

tp(µs)

Fig. 4 : Capacitance versus reverse applied
voltage(typicalvalues).

C(pF)

100

F=1MHz
Vosc=30mV

50

1.0

V (V)CL

0.1
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

Fig.5 : Relativevariationof leakagecurrentversus
junctiontemperature(typicalvalues).

RR

I [Tj] / I [Tj=25°C]

200
100

10

Tj(°C)

1

25 50 75 100 125

20

V (V)R

10

12 510

Fig. 6 :

Peak forward voltage drop versus peak

forwardcurrent (typicalvalues).

I (A)

FM

5.00

Tj=25°C

1.00

0.10

V (V)FM

0.01

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

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APPLICATIONEXAMPLE :
1 - Protectionof logic-level signals.

(ex: centronicsjunction)

ESDA6V1S3 / ESDA6V2S6

2 - Protectionof symmetricalsignals.
Note: Capacitancevaluebetween any I/Opinand

Groundis dividedby2.

D1

D2

Dn

0to5V

0to5V

0to5V

A1

A2

A16

+/- 2.5 V

+/- 2. 5 V

+/- 2.5 V

ImplementingitsASD

TM

technology,SGS-Thomson
hasdevelopedamonolithicTRANSILdiodearray,
which is a reliable protection against electrostatic
overloads for computer I/O ports, modems, GSM
handsetsand accessoriesor othersimilar systems
with data outputs. The ESDAxxSx integrates 18
TRANSILdiodesin acompactpackagethat canbe
easily mounted close to the circuitry to be
protected, eliminating the assembly costs

associated with the use of discrete diodes, and
alsoincreasingsystemreliability.

EachTRANSILhas abreakdownvoltage between

6.2V (minimum) and 7.2V (maximum). When the
inputvoltageis lower than the breakdown voltage,
the diodes present a high impedance to ground.
For short overvoltage pulses, the fast-acting
diodesprovide analmostinstantaneousresponse,
clampingthe voltageto a safe level.

5/7

ESDA6V1S3 / ESDA6V2S6

ORDER CODE

ESD ARRAY

ESDA 6V1 S 3 RL

min

V

BR

PACKAGING:
RL =Tape andreel

= Tube

PACKAGE :
3 : SO20
6 : SSOP20

MARKING :

Logo,date code

TYPE MARKING

ESDA6V1S3 E6V1S3
ESDA6V2S6 ESDA6V2S6

Packaging :

Preferredpackagingis tapeand reel.

PACKAGEMECHANICAL DATA

SO20 (Plastic)

D

A

K

e

A1B

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

hx45°

A 2.35 2.65 0.092 0.104

A1 0.10 0.20 0.004 0.008

L

C

B 0.33 0.51 0.013 0.020
C 0.23 0.32 0.009 0.013
D 12.6 13.0 0.484 0.512

Weight:

6/7

0.55g.

EH

E 7.40 7.60 0.291 0.299

e 1.27 0.050
H 10.0 10.65 0.394 0.419

h 0.25 0.75 0.010 0.029

L 0.50 1.27 0.020 0.050
K8°(max)

PACKAGEMECHANICAL DATA

SSOP20 (Plastic)

L

2

A

A

b

D

20

e

11

101

k

E1

E

A1 c

ESDA6V1S3 / ESDA6V2S6

DIMENSIONS

REF.

A 2.00 0.079
A1 0.25 0.010
A2 1.51 2.00 0.059 0.079

b 0.25 0.30 0.35 0.010 0.012 0.014

c 0.10 0.35 0.004 0.014
D 7.05 8.05 0.278 0.317
E 7.60 8.70 0.299 0.343

E1 5.02 6.10 6.22 0.198 0.240 0.245

e 0.65 0.026

k0° 10° 0° 10°

L 0.25 0.50 0.80 0.010 0.020 0.031

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Weight:

Informationfurnished is believedto beaccurate andreliable. However, STMicroelectronics assumesno responsibilityfor the consequences of
use ofsuch informationnor forany infringementof patentsor otherrights ofthirdparties which mayresult fromits use. No license isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publicationsupersedes and replaces all informationpreviouslysupplied.
STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written ap­proval of STMicroelectronics.

0.18g.

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 1998STMicroelectronics - Printed in Italy - Allrightsreserved.

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