SGS Thomson Microelectronics ESDA6V1U1 Datasheet
®
ESDA6V1U1
Applicati on Spec ific Di scretes
A.S.D.
APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
- COMPUTERS
- PRINTERS
- COMMUNICATION S YS TEM S
- GSM HA NDS ETS AND A CCE SS ORI ES
- CAR RA DIO
It is particulary recommended for parallel port
protection where the line interface withstands only
2 kV ESD surge.
FEATURES
6 UNIDIRECTIONAL TRANSIL FUNCTIONS
LOW LEAKAGE CURRENT: IR max. < 2 µA
200 W PEAK PULSE POWER (8/20 µs)
TRANSIL ARRAY
FOR ESD PROTECTION
SO8
FUNCTIONAL DIAGRAM
DESCRITION
The ESDA6V1U1 is a monolithic voltage
suppressor designed to protect components whic h
are connected to data and transmission lines
against ESD.
It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients.
BENEFITS
High ESD protection level : up to 25 kV
High integration
Suitable for high density boards
COMPLIES WITH THE FOLLOWING STANDARDS :
IEC 1000-4-2 : level 4
MIL STD 883C-Method 3015-6 : class3
(human body model)
I/O 1
I/O 2
I/O 3
I/O 4
8
I/O 6
2
3
4
7
6
5
GND
GND
I/O 5
January 1998 - Ed : 2
1/6
ESDA6V1U1
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol Parameter Value Unit
V
PP
Electrostatic discharge
25 kV
MIL STD 883C - Method 3015-6
P
PP
T
stg
T
j
T
L
ELECTRICAL CHARACTERISTICS
Peak pulse power (8/20µs) 200 W
Storage temperature range
Maximum junction temperature
- 55 to + 150
125
Maximum lead temperature for soldering during 10s 260 °C
(T
= 25°C)
amb
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
°C
°C
I
PP
α
T Voltage temperature coefficient
Peak pulse current
C Capacitance
Rd Dynamic resistance
V
F
Types VBR @
Forward voltage drop
I
R
IRM @ V
RM
Rd αTCV
@ I
F
min. max. max. typ. max. typ. max.
note 1 note 2 0V bias
VVmAµAV Ω10
-4
/°CpF VmA
ESDA6V1U1 6.1 7.2 1 2 5 0.5 6 100 1.5 200
note 1
: Square pulse, Ipp = 25A, tp=2.5µs.
note 2
: ∆ V
= αT* (Tamb -25°C) * VBR (25°C)
BR
F
2/6
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