SGS Thomson Microelectronics ESDA6V1SC6, ESDA6V1SC5, ESDA25SC6, ESDA5V3SC6, ESDA5V3SC5 Datasheet

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ESDAxxSC5
®
ESDAxxSC6
Application Specific Discretes
A.S.D.
APPLICATIONS
Where transient overvoltage protection in ESD sensitive equipment is required, such as :
-COMPUTERS
- PRINTERS
- COMMUNICATION SYSTEMS
- GSM HANDSETS AND ACCESSORIES
- OTHER TELEPHONE SET
FEATURES
4 UNIDIRECTIONAL TRANSIL FUNCTIONS
n
LOW LEAKAGE CURRENT: IRmax. < 20 µAat
n
V
BR
n
500 W PEAK PULSE POWER (8/20 µs)
DESCRIPTION
QUAD TRANSIL ARRAY
FOR ESD PROTECTION
SOT23-5L (SC-59)
ESDAxxSC5
FUNCTIONAL DIAGRAM
SOT23-5L
SOT23-6L (SC-59)
ESDAxxSC6
They clamp the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transient.
BENEFITS
High ESD protection level : up to 25 kV High integration Suitable for high density boards
COMPLIES WITH THE FOLLOWING STAN­DARDS:
IEC61000-4-2 : level 4
MIL STD 883C-Method 3015-6 : class3 (human body model)
1
2
3
SOT23-6L
1
2
3
5
4
6
5
4
March 2000 Ed: 5D
1/7
ESDAxxSC5 / ESDAxxSC6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
note 1: 300 W for ESDA14V2SC5 AND ESDA14V2SC6 note 2: Evolution of functional parameters is given by curves.
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
C
Rd
V
F
ESD discharge - MIL STD 883C - Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge Peak pulse power (8/20µs) note1 Junction temperature Storage temperature range Lead solder temperature (10 second duration)
Operating temperature range
= 25°C)
amb
Stand-off voltage Breakdown voltage
V
Clamping voltage
BR
Leakage current Peak pulse current Voltage temperature coefficient Capacitance Dynamic resistance
Slope:
Forward voltage drop
25 16
9 500 W 150 °C
-55 to +150 °C 260 °C
-40 to +125 °C
I
I
F
I
I
RM
PP
V
F
V
RM
1
Rd
kV
V
@IRIRM@V
V
BR
min. max. max. typ. max. typ. max.
Types
VVmAµAVm10
ESDA5V3SC5
5.3 5.9 1 2 3 230 5 280 1.25 200
ESDA5V3SC6 ESDA6V1SC5
6.1 7.2 1 20 5.25 350 6 190 1.25 200
ESDA6V1SC6 ESDA14V2SC5
14.2 15.8 1 5 12 650 10 100 1.25 200
ESDA14V2SC6 ESDA25SC6
note 1 : Square pulse, Ipp = 15A, tp=2.5µs. note 2 : VBR= αT* (Tamb -25°C) * VBR(25°C)
2/7
25 30 1 1 24 1000 10 60 1.2 10
Rd αTCV
RM
note 1 note 2 0V bias
-4
/°C pF V mA
@I
F
F
CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE
The ESDA familyhasbeendesigned to clamp fast spikes like ESD. Generally the PCB designers need to calculate easily the clamping voltage V
CL
VCL=VBR+RdI
PP
WhereIppisthepeak currentthrough theESDA cell.
DYNAMIC RESISTANCE MEASUREMENT
The short duration of the ESDhasledusto prefer amoreadapted testwave, as belowdefined, tothe classical 8/20µs and 10/1000µs surges.
I
Ipp
ESDAxxSC5 / ESDAxxSC6
.
2µs
tp = 2.5µs
2.5µs duration measurement wave.
t
3/7
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