SGS Thomson Microelectronics ESDA6V2S6, ESDA6V1S3 Datasheet

ESDA6V1S3



ApplicationSpecificDiscretes

A.S.D.

APPLICATIONS

Where transient overvoltage protection in ESD
sensitiveequipment isrequired,suchas :

-COMPUTERS

-PRINTERS

-COMMUNICATIONSYSTEMS

-GSMHANDSETSANDACCESSORIES

-OTHERTELEPHONESETS

FEATURES

18 UNIDIRECTIONALTRANSIL FUNCTIONS
LOWLEAKAGECURRENT: I
200 W PEAKPULSEPOWER(8/20µs)



max.<2 µA

R

ESDA6V2S6

TRANSIL ARRAY

FOR ESD PROTECTION

SO20

ESDA6V1S3

SSOP20

ESDA6V2S6

DESCRITION

The ESDA6xxSx is a monolithic voltage
suppressordesignedto protectcomponentswhich
are connected to data and transmission lines
againstESD.

It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
belowground for negative transients.

BENEFITS

HighESDprotection level: upto 25 kV
Highintegration
Suitablefor highdensityboards

COMPLIESWITH THEFOLLOWING STANDARDS :

IEC1000-4-2: level4

MILSTD883C-Method3015-6: class3
(humanbodymodel)

FUNCTIONALDIAGRAM

October 1998 Ed: 2A

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ESDA6V1S3 / ESDA6V2S6

ABSOLUTEMAXIMUM RATINGS(T

amb

=25°C)

Symbol Parameter Value Unit

V

PP

Electrostaticdischarge

25 kV

MILSTD883C- Method3015-6

P

PP

T

stg

T

j

T

L

ELECTRICALCHARACTERISTICS

Peakpulse power(8/20µs) 200 W
Storagetemperaturerange

Maximumjunction temperature

- 55 to +150
150

Maximumlead temperatureforsolderingduring 10s 260 °C

(T

=25°C)

amb

Symbol Parameter

V

RM

V

BR

V

CL

I

RM

Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent

°C
°C

I

PP

α

T Voltagetemperaturecoefficient

Peak pulsecurrent

C Capacitance

Rd Dynamicresistance

V

F

Types VBR@I

ESDA6V1S3
ESDA6V2S6

Note 1: Betweenany I/O pin and Ground
Note 2: Square pulse, IPP= 25A forESDA6V1S3and IPP= 15Afor ESDA6V2S6 , tp= 2.5µs
Note 3: ∆VBR= αT*[T

Forwardvoltagedrop

I

R

min. max. max. typ. max. typ. max.

note1 note1 note 2 note 3 0V bias

VVmAµAV

6.1 7.2 1 2 5.25 0.5 6 120 1.25 200

6.2 7.2 1 2 5.25 0.5 6 100 1.25 200

-25] * VBR(25°C)

amb

RM

@V

RM

Rd

Ω10

TC V

α

-4

/°CpF V mA

@I

F

F

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CALCULATION OF THECLAMPING VOLTAGE
USEOFTHEDYNAMICRESISTANCE

TheESDAfamilyhasbeen designed to clamp fast
spikes like ESD. Generally the PCB designers
need to calculate easily the clamping voltageV

CL

This is why we give the dynamic resistance in
addition to the classical parameters. The voltage
across the protection cell can be calculated with
thefollowingformula:

V

CL=VBR

+RdI

PP

WhereIppisthepeakcurrentthroughtheESDAcell.

DYNAMICRESISTANCEMEASUREMENT

Theshortdurationof the ESDhasled us toprefer
amoreadaptedtestwave,asbelowdefined,tothe
classical8/20µs and 10/1000µssurges.

I

Ipp

ESDA6V1S3 / ESDA6V2S6

As the value of the dynamic resistance remains
stable for a surge duration lower than 20µs, the

.

2.5µsrectangularsurgeis welladapted.Inaddition
bothrise and fall times are optimized to avoid any
parasiticphenomenonduring the measurementof
Rd.

2µs

tp = 2.5µs

2.5µsdurationmeasurementwave.

t

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