SGS Thomson Microelectronics ESDA6V1-5SC6 Datasheet
®
ESDA6V1-5SC6
Application Specific Discretes
A.S.D.
APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
■
Printers
■
Communication systems
■
Cellular phone handsets and accessories
■
Other telephone sets
■
Set top boxes
■
DESCRIPTION
The ESDA6V1-5SC6 is a 5-bit wide monolithic
suppressor which is designed to protect against
ESD components connected to data and
transmission lines.
FEATURES
■ 5 UNIDIRECTIONAL TRANSIL FUNCTIONS
■
BREAKDOWN VOLTAGE: VBR = 6.1V min
■
LOW LEAKAGE CURRENT: IRmax<1µA
TRANSIL ARRAY
FOR ESD PROTECTION
SOT23-6L
FUNCTIONAL DIAGRAM
I/O1
Gnd
I/O5
I/O4
BENEFITS
■
High integration
■
Suitable for high density boards
COMPLIES WITH THE FOLLOWING STANDARDS:
Max
current
IEC 61000-4-2
level 4
MIL STD
Test kV
Air 15 Contact 8 30 A
Contact > 4 > 2.67 A
883C-Method
3015.7 class3
(human body model)
February 2002 -Ed: 2B
I/O2
ESD response to IEC61000-4-2
(air discharge 16kV, positive surge)
I/O3
1/5
ESDA6V1-5SC6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
Note 1: The evolution of the operating parameters versus temperature is given by curves and αT parameter.
ELECTRICAL CHARACTERISTICS (T
ESD discharge - MIL STD 883E - Method 3015-7
IEC 61000-4-2 air discharge
IEC 61000-4-2 contact discharge
Peak pulse power (8/20µs)
Junction temperature
Storage temperature range
Lead solder temperature (10 seconds duration)
Operating temperature range (note 1)
= 25°C)
amb
25
20
15
100 W
150 °C
-55 to +150 °C
260 °C
-40 to +125 °C
Symbol Parameter
I
V
RM
V
BR
V
CL
I
RM
I
PP
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Vcl
VBR
IF
VF
VRM
IRM
kV
V
αT
C
Rd
V
F
Voltage temperature
Capacitance
Dynamic impedance
Forward voltage drop
V
BR@IR
min. max
Type
VVmAµAVmΩ10
ESDA6V1-5SC6
Note 2 : Square pulse, Ipp = 15A, tp=2.5µs.
Note 3: ∆VBR= αT*(T
6.1 7.2 1 1 3 590 6 50 1.25 200
- 25°C) * VBR(25°C)
amb
Slope = 1/Rd
IPP
IRM@V
RM
Rd αTCV
F@IF
max. typ. max. typ. max
.
note 2 note 3 0V bias
-4
/°C pF V mA
2/5
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