SGS Thomson Microelectronics ESDA6V1-5P6 Datasheet

®
ESDA6V1-5P6
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD sensitive equipment is required, such as :
Computers
Printers
Communication systems and cellular phones
Video equipment
Thisdeviceisparticularlyadpatedto the protection of symmetrical signals.
FEATURES
5UNIDIRECTIONAL TRANSIL™ FUNCTIONS.
BREAKDOWN VOLTAGE V
LOW LEAKAGE CURRENT < 500 nA
VERY SMALL PCB AREA < 2.6 mm
DESCRIPTION
The ESDA6V1-5P6 is a monolithic array designed to protect up to 5 lines against ESD transients.
This device is ideal for applications where board space saving is required.
= 6.1V MIN
BR
2
TRANSIL™ ARRAY
FOR ESD PROTECTION
SOT-666
FUNCTIONAL DIAGRAM
I/O1
I/O5
BENEFITS
High ESD protection level.
High integration.
Suitable for high density boards.
COMPLIESWITH THE FOLLOWING STANDARDS :
IEC61000-4-2 level 4: 15 kV (air discharge)
8kV (contact discharge)
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
March 2003 - Ed: 2A
GND
I/O2
I/O4 I/O3
1/5
ESDA6V1-5P6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge Peak pulse power (8/20 µs) (see note 1) Tjinitial = Tamb Junction temperature Storage temperature range Maximum lead temperature for soldering during 10sat 5mm for case Operating temperature range
±15
±8 150 W 125 °C
-55to+150 °C 260 °C
-40to+150 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
ELECTRICAL CHARACTERISTICS (T
Junction to ambient on printed circuit on recommended pad layout
= 25°C)
amb
220 °C/W
kV
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
C
R
d
Types V
ESDA6V1-5P6
Stand-off voltage Breakdown voltage
Clamping voltage
Leakage current Peak pulse current Voltage tempature coefficient Forward voltage drop Capacitance per line Dynamic resistance
BR
min. max. max. typ. max. typ.
VVmAµAV
6.1 7.2 1 0.5 3 1.5 4.5 70
@I
R
V
CLVBRVRM
Slope: 1/R
IRM@V
RM
I
I
F
V
F
I
RM
d
I
PP
Rd αTC
@0V
10
-4
/°C pF
V
2/5
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