®
ESDA6V1-4F1
QUAD TRANSIL™ ARRAY
A.S.D.™
APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
■
Printers
■
Communication systems
■
GSM handsets and accessories
■
Other telephone sets
■
Set top boxes
■
DESCRIPTION
The ESDA6V1-4F1 is a 4-bit wide monolithic
suppressor designed to protect against ESD
components which are connected to data and
transmission lines.
It clamps the voltage just above the logic level
supply for positive transients, and to a diode
forward voltage drop below ground for negative
transients.
FEATURES
■
4 Unirectional transil functions
■
Breakdown voltage: VBR= 6.1Vmin
■
Low leakage current < 10 µA
■
Very low PCB space consuming
FOR ESD PROTECTION
3
A
B
FUNCTIONAL DIAGRAM
Z1
Z2
Flip Chip
(Bump side)
A3
21
GND
GND
Z3
Z4
A1A2
BENEFITS
■
> ± 15kV ESD Protection
■
High integration
■
Suitable for high density boards
COMPLIES WITH THE FOLLOWING STANDARDS:
- IEC61000-4-2: Level 4
15 kV (air discharge)
8 kV (contact discharge)
- MIL STD 883E-Method 3015-6: class3
(Human body model)
July 2002- Ed: 2A
B3
B2 B1
ESD RESPONSE TO IEC61000-4-2
(air discharge 16kV, positive surge)
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ESDA6V1-4F1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
ELECTRICAL CHARACTERISTICS (T
ESD discharge - MIL STD 883E - Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Peak pulse power (8/20µs)
Junction temperature
Storage temperature range
Lead solder temperature (10 seconds duration)
Operating temperature range
= 25°C)
amb
±25
±15
±8
150 W
150 °C
-55 to +150 °C
260 °C
-40 to +85 °C
Symbol Parameter
I
V
RM
V
BR
V
CL
I
RM
I
PP
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
VCLVBR VRM
IRM
IR
kV
V
αT Voltage temperature coefficient
C Capacitance per line
Rd Dynamic impedance
V
F
Forward voltage drop
min. max. max. typ. max max
Type
ESDA6V1- 4F1
Note 1: Square pulse IPP= 15A, tp = 2.5µs
Note 2: ∆VBR= αT*(T
-25)*VBR(25°C)
amb
6.1 7.2 1 10 5 350 6 250
Slope = 1/Rd
IPP
V
@I
BR
VVmAµAVmΩ10
R
IRM@V
RM
Rd TC
note 1 note 2 0V bias
-4
/°C pF
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