SGS Thomson Microelectronics ESDA6V1SC6, ESDA6V1SC5, ESDA25SC6, ESDA5V3SC6, ESDA5V3SC5 Datasheet

...
ESDAxxSC5
®
ESDAxxSC6
Application Specific Discretes
A.S.D.
APPLICATIONS
Where transient overvoltage protection in ESD sensitive equipment is required, such as :
-COMPUTERS
- PRINTERS
- COMMUNICATION SYSTEMS
- GSM HANDSETS AND ACCESSORIES
- OTHER TELEPHONE SET
FEATURES
4 UNIDIRECTIONAL TRANSIL FUNCTIONS
n
LOW LEAKAGE CURRENT: IRmax. < 20 µAat
n
V
BR
n
500 W PEAK PULSE POWER (8/20 µs)
DESCRIPTION
QUAD TRANSIL ARRAY
FOR ESD PROTECTION
SOT23-5L (SC-59)
ESDAxxSC5
FUNCTIONAL DIAGRAM
SOT23-5L
SOT23-6L (SC-59)
ESDAxxSC6
They clamp the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transient.
BENEFITS
High ESD protection level : up to 25 kV High integration Suitable for high density boards
COMPLIES WITH THE FOLLOWING STAN­DARDS:
IEC61000-4-2 : level 4
MIL STD 883C-Method 3015-6 : class3 (human body model)
1
2
3
SOT23-6L
1
2
3
5
4
6
5
4
March 2000 Ed: 5D
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ESDAxxSC5 / ESDAxxSC6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
note 1: 300 W for ESDA14V2SC5 AND ESDA14V2SC6 note 2: Evolution of functional parameters is given by curves.
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
C
Rd
V
F
ESD discharge - MIL STD 883C - Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge Peak pulse power (8/20µs) note1 Junction temperature Storage temperature range Lead solder temperature (10 second duration)
Operating temperature range
= 25°C)
amb
Stand-off voltage Breakdown voltage
V
Clamping voltage
BR
Leakage current Peak pulse current Voltage temperature coefficient Capacitance Dynamic resistance
Slope:
Forward voltage drop
25 16
9 500 W 150 °C
-55 to +150 °C 260 °C
-40 to +125 °C
I
I
F
I
I
RM
PP
V
F
V
RM
1
Rd
kV
V
@IRIRM@V
V
BR
min. max. max. typ. max. typ. max.
Types
VVmAµAVm10
ESDA5V3SC5
5.3 5.9 1 2 3 230 5 280 1.25 200
ESDA5V3SC6 ESDA6V1SC5
6.1 7.2 1 20 5.25 350 6 190 1.25 200
ESDA6V1SC6 ESDA14V2SC5
14.2 15.8 1 5 12 650 10 100 1.25 200
ESDA14V2SC6 ESDA25SC6
note 1 : Square pulse, Ipp = 15A, tp=2.5µs. note 2 : VBR= αT* (Tamb -25°C) * VBR(25°C)
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25 30 1 1 24 1000 10 60 1.2 10
Rd αTCV
RM
note 1 note 2 0V bias
-4
/°C pF V mA
@I
F
F
CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE
The ESDA familyhasbeendesigned to clamp fast spikes like ESD. Generally the PCB designers need to calculate easily the clamping voltage V
CL
VCL=VBR+RdI
PP
WhereIppisthepeak currentthrough theESDA cell.
DYNAMIC RESISTANCE MEASUREMENT
The short duration of the ESDhasledusto prefer amoreadapted testwave, as belowdefined, tothe classical 8/20µs and 10/1000µs surges.
I
Ipp
ESDAxxSC5 / ESDAxxSC6
.
2µs
tp = 2.5µs
2.5µs duration measurement wave.
t
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ESDAxxSC5 / ESDAxxSC6
junction temperature.
Ppp[Tj initial]/Pp p [T j in itia l= 2 5 °C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
Tj initial(°C)
Fig. 3: Clamping voltage versus peak pulse
current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs.
Ipp(A)
50.0
10.0
ESDA6V1SC5/SC6
1.0
ESDA5V3SC5/SC6
Vcl(V)
0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
ESDA25SC5/SC6
ESDA14V2SC5/SC6
tp=2.5µs
Fig. 2:Peak pulsepowerversus exponentialpulse duration (Tj initial = 25 °C).
Ppp(W)
5000
ESDA5V3SC5/SC6
&
1000
ESDA14V2SC5/SC6
&
ESDA25SC6
ESDA6V1SC5/SC6
tp(µs)
100
1 10 100
Fig. 4: Capacitance versus reverse applied voltage (typical values).
C(pF)
500
200 100
50
ESDA5V3SC5/SC6
ESDA6V1SC5/SC6
ESDA14V2SC5/SC6
20
VR(V)
10
12 51020 50
F=1MHz
Vosc=30mV
ESDA25SC6
Fig. 5:Relative variation ofleakage current versus junction temperature (typical values).
IR[Tj] / IR[Tj=25°C ]
200
Tj(°C)
ESDA14V2SC5/SC6
&
ESDA6V1SC5/SC6
ESDA25SC6
ESDA5V3SC5/SC6
100
10
1
25 50 75 100 125
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IFM(A)
5.00
ESDA5V3SC5/SC6
1.00
0.10
0.01
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ESDA14V2SC5/SC6
ESDA6V1SC5/SC6
VFM(V)
&
ESDA25SC6
Tj=25°C
ESD protection by ESDAXXXSCX
ESDAxxSC5 / ESDAxxSC6
Electrostatic discharge (ESD) is a major cause of failure in electronic systems.
SurfacemountTVS arraysofferthe bestchoicefor minimal lead inductance.
I/ O LINES
ESD
sensitive
device
ESDA6V1SC6 (1connection to GND for ESDAxxSC5)
ThetinySOT23-5L andSOT23-6L packages allow design flexibility in the high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD.
ADVICE FOR OPTIMIZING CIRCUIT BOARD LAYOUT
Circuit board layout is a critical design step in the suppression of ESD induced transients. The following guidelines are recommended :
n
TheESDAxxSC5/6should beplaced ascloseas possible to the input terminals or connectors.
GND
n
The path length between the ESD suppressor and the protected line should be minimized
n
All conductive loops, including power and ground loops should be minimized
n
The ESD transient return path to ground should be kept as short as possible.
n
Ground planes should be used whenever possi­ble.
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ESDAxxSC5 / ESDAxxSC6
ORDER CODE
ESDA 6V1 SC6
ESD ARRAY
MARKING
Type Marking
ESDA6V1SC5 EC61 ESDA6V1SC6 ES61 ESDA5V3SC5 EC53
Packaging: Standard packaging is tape and reel.
PACKAGE MECHANICAL DATA
SOT23-5L
A
H
e
D
e
b
A2
V
BR min
PACKAGE : SC5: SOT23-5L
SC6: SOT23-6L
MARKING
Type Marking
ESDA5V3SC6 ES53 ESDA14V2SC5 EC15 ESDA14V2SC6 ES15
ESDA25SC6 ES25
Packaging: Standard packaging is tape and reel.
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 0.90 1.45 0.035 0.057 A1 0 0.15 0 0.006 A2 0.90 1.30 0.035 0.0512
FOOT PRINT
1
3.6
0.137
6/7
0.040
A1
L
c
M
E
b 0.35 0.50 0.0137 0.02
c 0.09 0.20 0.004 0.008 D 2.80 3.00 0.11 0.118 E 1.50 1.75 0.059 0.0689 e 0.95 0.0374 H 2.60 3.00 0.102 0.118
0.65
0.025
0.95
0.037
1.3
0.051
mm
inch
L 0.10 0.60 0.004 0.024
M 10° 10°
PACKAGE MECHANICAL DATA
SOT23-6L
H
A
A2
REF.
ESDAxxSC5 / ESDAxxSC6
DIMENSIONS
Millimeters Inches
e
D
e
FOOT PRINT
1
3.6
0.137
0.040
Min. Typ. Max. Min. Typ. Max.
b
A 0.90 1.45 0.035 0.057
A1 0 0.15 0 0.006 A2 0.90 1.30 0.035 0.0512
A1
L
c
M
E
b 0.35 0.50 0.0137 0.02
C 0.09 0.20 0.004 0.008 D 2.80 3.00 0.11 0.118
E 1.50 1.75 0.059 0.0689 e 0.95 0.0374
H 2.60 3.00 0.102 0.118
L 0.10 0.60 0.004 0.024
0.65
0.025
1.3
0.051
mm
inch
M 10° 10°
0.95
0.037
Informationfurnished is believedto be accurateandreliable. However, STMicroelectronicsassumesno responsibility fortheconsequences of useof such informationnor for anyinfringementof patents orotherrights of thirdpartieswhich may resultfromits use. Nolicense is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorizedfor use as critical components in life support devices or systems without express writtenap­proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.
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