®
ESDA25W5
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
n
Printers
n
Communication systems
n
Cellular phones handsets and accessories
n
Other telephone sets
n
Set top boxes
n
FEATURES
4 unidirectional TRANSIL functions.
n
150W peak pulse power (8/20µs)
n
n
Breakdown voltage : VBR= 25V min.
n
Low leakage current:<1µA.
n
VerylowPCBspaceconsuming : 4.2mm2typically.
DESCRIPTION
QUAL TRANSIL ARRAY
FOR ESD PROTECTION
SOT323-5L
FUNCTIONAL DIAGRAM
The ESDA25W5 is a 4-bit wide monolithic
suppressor designed to protect components
which are connected to data and transmission
lines against ESD.
It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients.
BENEFITS
n
High ESD protection level : up to 25 kV.
n
High integration.
n
Suitable for high density boards.
COMPLIESWITH THE FOLLOWINGSTANDARDS :
n
IEC61000-4-2 level 4
n
MIL STD 883C-Method 3015-6 : class 3.
(human body model)
1
5
2
3
4
March 2000 - Ed: 1A
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ESDA25W5
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Test conditions Value Unit
amb
= 25°C)
V
PP
P
PP
T
op
T
j
T
stg
T
L
Note 1: The evolution of the operating parameters versus temperature is given trough curves and αT parameter
ELECTRICAL CHARACTERISTICS (T
ESD discharge MIL STD 883C - Method 3015-6
IEC61000-4-2, air discharge
IEC61000-4-2, contact discharge
Peak pulse power (8/20 µs)
Operating temperature range Note 1
Junction temperature
Storage temperature range
Lead solder temperature (10 secondes duration)
= 25°C)
amb
25
16
9
150 W
-40to+85 °C
150 °C
-55to+150 °C
260 °C
Symbol Parameter
V
V
V
I
I
αT
RM
BR
CL
RM
PP
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Voltage temperature coefficient
V
V
CL
V
RM
BR
I
I
RM
I
R
kV
V
C
Rd
V
F
Types VBR@
ESDA25W5
note 2 : Square pulse Ipp = 15A, tp=2.5µs.
note 3 : ∆ VBR= αT* (T
Capacitance per line
Dynamic resistance
Forward voltage drop
min. max. max. typ. max. typ. max.
VVmAµAV
25 30 1 1 24 1.9 10 30 1.2 10
-25°C) * VBR(25°C)
amb
slope : 1 / R
I
R
IRM@V
RM
Rd αTC V
note 2 note 3 0V bias
Ω
d
10-4/°C pF V mA
I
PP
@I
F
F
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ESDA25W5
Fig. 1: Peak pulse power dissipation versus initial
junction temperature
Ppp [Tj initial] / Ppp [T j in itia l= 2 5 °C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
Tj initial (°C)
Fig. 3: Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 µs.
Ipp(A)
100.0
tp=2.5µs
Fig. 2: Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C)
Ppp(W)
1000
100
tp(µs)
10
1
10
100
Fig. 4: Capacitance versus reverse applied
voltage (typical values).
C(pF)
100
F=1MHz
Vosc=30mV
10.0
1.0
Vcl(V)
0.1
25 30 35 40 45 50 55 60 65 70
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
IR[Tj] / IR[Tj=25°C ]
100
10
1
25 50 75 100 125 150
Tj(°C)
10
1
1
VR(V)
10
100
Fig. 6: Peak forward voltage drop versus peak
forward current (typical values).
IFM(A)
1E-4
Tj=25°C
3E-5
1E-5
3E-6
1E-6
3E-7
1E-7
3E-8
1E-8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VFM(V)
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ESDA25W5
ORDER CODE
ESDA 25 W5
ESD ARRAY Package:SOT323-5L
Vmin
BR
Ordering type Marking Package Weight Base qty Delivery mode
ESDA25W5 E25 SOT323-5L 5.4 mg. 3000 Tape & reel
PACKAGE MECHANICAL DATA
SOT323-5L
DIMENSIONS
A1
H
Q1
c
FOOT PRINT (in millimeters)
0.3mm
1mm
1mm
0.35mm
D
ee
b
29mm
REF.
A2A
Millimeters Inches
Min. Max. Min. Max.
A 0.8 1.1 0.031 0.043
A1 0 0.1 0 0.004
A2 0.8 1 0.031 0.039
b 0.15 0.3 0.006 0.012
c 0.1 0.18 0.004 0.007
D 1.8 2.2 0.071 0.086
E 1.15 1.35 0.045 0.053
E
e 0.65Typ. 0.026 Typ.
H 1.8 2.4 0.071 0.094
Q1 0.1 0.4 0.004 0.016
Mechanical specifications
Lead plating Tin-lead
Lead plating thickness 5µm min.
25 µm max.
Lead material Sn / Pb
(70% to 90% Sn)
Lead coplanarity 10µm max.
Body material Molded epoxy
Epoxy meets UL94,V0
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ESDA25W5
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useof such information nor for any infringement of patents or otherrightsof third parties which may result from its use. No licenseis granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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