SGS Thomson Microelectronics ESDA25W5 Datasheet
®
ESDA25W5
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
n
Printers
n
Communication systems
n
Cellular phones handsets and accessories
n
Other telephone sets
n
Set top boxes
n
FEATURES
4 unidirectional TRANSIL functions.
n
150W peak pulse power (8/20µs)
n
n
Breakdown voltage : VBR= 25V min.
n
Low leakage current:<1µA.
n
VerylowPCBspaceconsuming : 4.2mm2typically.
DESCRIPTION
QUAL TRANSIL ARRAY
FOR ESD PROTECTION
SOT323-5L
FUNCTIONAL DIAGRAM
The ESDA25W5 is a 4-bit wide monolithic
suppressor designed to protect components
which are connected to data and transmission
lines against ESD.
It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients.
BENEFITS
n
High ESD protection level : up to 25 kV.
n
High integration.
n
Suitable for high density boards.
COMPLIESWITH THE FOLLOWINGSTANDARDS :
n
IEC61000-4-2 level 4
n
MIL STD 883C-Method 3015-6 : class 3.
(human body model)
1
5
2
3
4
March 2000 - Ed: 1A
1/5
ESDA25W5
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Test conditions Value Unit
amb
= 25°C)
V
PP
P
PP
T
op
T
j
T
stg
T
L
Note 1: The evolution of the operating parameters versus temperature is given trough curves and αT parameter
ELECTRICAL CHARACTERISTICS (T
ESD discharge MIL STD 883C - Method 3015-6
IEC61000-4-2, air discharge
IEC61000-4-2, contact discharge
Peak pulse power (8/20 µs)
Operating temperature range Note 1
Junction temperature
Storage temperature range
Lead solder temperature (10 secondes duration)
= 25°C)
amb
25
16
9
150 W
-40to+85 °C
150 °C
-55to+150 °C
260 °C
Symbol Parameter
V
V
V
I
I
αT
RM
BR
CL
RM
PP
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Voltage temperature coefficient
V
V
CL
V
RM
BR
I
I
RM
I
R
kV
V
C
Rd
V
F
Types VBR@
ESDA25W5
note 2 : Square pulse Ipp = 15A, tp=2.5µs.
note 3 : ∆ VBR= αT* (T
Capacitance per line
Dynamic resistance
Forward voltage drop
min. max. max. typ. max. typ. max.
VVmAµAV
25 30 1 1 24 1.9 10 30 1.2 10
-25°C) * VBR(25°C)
amb
slope : 1 / R
I
R
IRM@V
RM
Rd αTC V
note 2 note 3 0V bias
Ω
d
10-4/°C pF V mA
I
PP
@I
F
F
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